Finite-Element Modelling of Biotransistors

Current research efforts in biosensor design attempt to integrate biochemical assays with semiconductor substrates and microfluidic assemblies to realize fully integrated lab-on-chip devices. The DNA biotransistor (BioFET) is an example of such a device. The process of chemical modification of the FET and attachment of linker and probe molecules is a statistical process that can result in variations in the sensed signal between different BioFET cells in an array. In order to quantify these and other variations and assess their importance in the design, complete physical simulation of the device is necessary. Here, we perform a mean-field finite-element modelling of a short channel, two-dimensional BioFET device. We compare the results of this model with one-dimensional calculation results to show important differences, illustrating the importance of the molecular structure, placement and conformation of DNA in determining the output signal

Thermal stability and diffusion in gadolinium silicate gate dielectric films

Gadolinium silicate films on Si(100) annealed in oxygen and vacuum at temperatures up to 800\u200a\ub0C were analyzed by Rutherford backscattering and narrow resonance nuclear profiling. Oxygen diffused into the film eliminating oxygen vacancies, but Si diffusion, previously observed in Al and Y oxides and in La and Zr silicate films, was absent. Higher-temperature annealing in oxygen resulted in the formation of an interfacial layer observable in high-resolution electron micrographs. Gd0.23Si0.14O0.63 films crystallize at temperatures between 1000 and 1050\u200a\ub0C. These observations combined with recent electrical measurements show that gadolinium silicate films may be a good candidate for the replacement of SiO2 in deep submicron metal\u2013oxide\u2013semiconductor gates.NRC publication: Ye

Microfabricated Reference Electrodes and their Biosensing Applications

Over the past two decades, there has been an increasing trend towards miniaturization of both biological and chemical sensors and their integration with miniaturized sample pre-processing and analysis systems. These miniaturized lab-on-chip devices have several functional advantages including low cost, their ability to analyze smaller samples, faster analysis time, suitability for automation, and increased reliability and repeatability. Electrical based sensing methods that transduce biological or chemical signals into the electrical domain are a dominant part of the lab-on-chip devices. A vital part of any electrochemical sensing system is the reference electrode, which is a probe that is capable of measuring the potential on the solution side of an electrochemical interface. Research on miniaturization of this crucial component and analysis of the parameters that affect its performance, stability and lifetime, is sparse. In this paper, we present the basic electrochemistry and thermodynamics of these reference electrodes and illustrate the uses of reference electrodes in electrochemical and biological measurements. Different electrochemical systems that are used as reference electrodes will be presented, and an overview of some contemporary advances in electrode miniaturization and their performance will be provided

Crystallographic reconstruction study of the effects of finish rolling temperature on the variant selection during bainite transformation in C-Mn high-strength steels

The effect of finish rolling temperature (FRT) on the austenite- () to-bainite () phase transformation is quantitatively investigated in high-strength C-Mn steels. In particular, the present study aims to clarify the respective contributions of the conditioning during the hot rolling and the variant selection (VS) during the phase transformation to the inherited texture. To this end, an alternative crystallographic reconstruction procedure, which can be directly applied to experimental electron backscatter diffraction (EBSD) mappings, is developed by combining the best features of the existing models: the orientation relationship (OR) refinement, the local pixel-by-pixel analysis and the nuclei identification and spreading strategy. The applicability of this method is demonstrated on both quenching and partitioning (Q&P) and as-quenched lath-martensite steels. The results obtained on the C-Mn steels confirm that the sample finish rolled at the lowest temperature (829{\deg}C) exhibits the sharpest transformation texture. It is shown that this sharp texture is exclusively due to a strong VS from parent brass {110}, S {213} and Goss {110} grains, whereas the VS from the copper {112} grains is insensitive to the FRT. In addition, a statistical VS analysis proves that the habit planes of the selected variants do not systematically correspond to the predicted active slip planes using the Taylor model. In contrast, a correlation between the Bain group to which the selected variants belong and the FRT is clearly revealed, regardless of the parent orientation. These results are discussed in terms of polygranular accommodation mechanisms, especially in view of the observed development in the hot-rolled samples of high-angle grain boundaries with misorientation axes between and

Frequency drift in MR spectroscopy at 3T

Purpose: Heating of gradient coils and passive shim components is a common cause of instability in the B-0 field, especially when gradient intensive sequences are used. The aim of the study was to set a benchmark for typical drift encountered during MR spectroscopy (MRS) to assess the need for real-time field-frequency locking on MRI scanners by comparing field drift data from a large number of sites.Method: A standardized protocol was developed for 80 participating sites using 99 3T MR scanners from 3 major vendors. Phantom water signals were acquired before and after an EPI sequence. The protocol consisted of: minimal preparatory imaging; a short pre-fMRI PRESS; a ten-minute fMRI acquisition; and a long post-fMRI PRESS acquisition. Both pre- and post-fMRI PRESS were non-water suppressed. Real-time frequency stabilization/adjustment was switched off when appropriate. Sixty scanners repeated the protocol for a second dataset. In addition, a three-hour post-fMRI MRS acquisition was performed at one site to observe change of gradient temperature and drift rate. Spectral analysis was performed using MATLAB. Frequency drift in pre-fMRI PRESS data were compared with the first 5:20 minutes and the full 30:00 minutes of data after fMRI. Median (interquartile range) drifts were measured and showed in violin plot. Paired t-tests were performed to compare frequency drift pre- and post-fMRI. A simulated in vivo spectrum was generated using FID-A to visualize the effect of the observed frequency drifts. The simulated spectrum was convolved with the frequency trace for the most extreme cases. Impacts of frequency drifts on NAA and GABA were also simulated as a function of linear drift. Data from the repeated protocol were compared with the corresponding first dataset using Pearson's and intraclass correlation coefficients (ICC).Results: Of the data collected from 99 scanners, 4 were excluded due to various reasons. Thus, data from 95 scanners were ultimately analyzed. For the first 5:20 min (64 transients), median (interquartile range) drift was 0.44 (1.29) Hz before fMRI and 0.83 (1.29) Hz after. This increased to 3.15 (4.02) Hz for the full 30 min (360 transients) run. Average drift rates were 0.29 Hz/min before fMRI and 0.43 Hz/min after. Paired t-tests indicated that drift increased after fMRI, as expected (p &lt; 0.05). Simulated spectra convolved with the frequency drift showed that the intensity of the NAA singlet was reduced by up to 26%, 44 % and 18% for GE, Philips and Siemens scanners after fMRI, respectively. ICCs indicated good agreement between datasets acquired on separate days. The single site long acquisition showed drift rate was reduced to 0.03 Hz/min approximately three hours after fMRI.Discussion: This study analyzed frequency drift data from 95 3T MRI scanners. Median levels of drift were relatively low (5-min average under 1 Hz), but the most extreme cases suffered from higher levels of drift. The extent of drift varied across scanners which both linear and nonlinear drifts were observed.</p

Evidence for an inhomogeneity size effect in narrow GaAs/AlxGa1-xAs constrictions

Measurements were made of the breakdown of the quantum Hall effect in GaAs/AlxGa1-xAs heterostructures with narrow constrictions (1 m). Structures were observed in both field sweeps and current sweeps. A simple model provides evidence that the origin of these structures is an inhomogeneity size effect which occurs when the length scale of the inhomogeneity becomes comparable with the sample width. The consequences of these inhomogeneities for critical current measurements are discussed. \ua9 1989 The American Physical Society.Peer reviewed: YesNRC publication: Ye