Työkyvyn hallinta, seuranta ja varhainen tuki : Tutkimus sairausvakuutuslain vuoden 2011 muutoksen vaikutuksista työpaikkojen toimintaan

Tutkimuksessa selvitettiin vuoden 2011 sairausvakuutuslain muutoksen vaikutuksia työkyvyn hallintaan, seurantaan ja varhaiseen tukeen. Sairausvakuutuslakimuutos (L 1056/2010) edellyttää, että ”työpaikalla on yhteistyössä työterveyshuollon kanssa sovitut käytännöt siitä, miten työkyvyn hallintaa, seurantaa ja varhaista tukea toteutetaan työpaikan ja työterveyshuollon yhteisenä toimintana”, jotta työterveyshuollon korvausluokkaan 1 kuuluvista palveluista aiheutuvista kustannuksista korvattaisiin 50 %:n sijaan 60 %. Tutkimus toteutettiin kahdessa vaiheessa. Ensimmäisessä vaiheessa tehtiin laaja, sähköinen kyselytutkimus, johon osallistui yli 1 000 työnantajaa. Toisessa vaiheessa kartoitettiin syvemmin työnantajien hyviksi kokemia työkyvyn hallinnan käytäntöjä sekä kehitysehdotuksia case-tutkimuksen menetelmin suppeammasta 22 työnantajan otoksesta. Tämän lisäksi haastateltiin viittä eri työterveyshuollon palveluntuottajaa. Yli 85 % kyselytutkimukseen osallistuneista ilmoitti sopineensa toimintakäytännöistä tai laatineensa toimenpideohjelman yhteistyössä työterveyshuollon kanssa, mikä on noin 10 prosenttiyksikköä enemmän kuin ennen vuotta 2011. Erilaisille toimintamalleille on laadittu suunnitelmia melko kattavasti, mutta suunnitelmien seuranta ei ole vielä systemaattista: suunnitelmiin ei ole kytketty tavoitteita, ja seurattavat mittarit puolestaan eivät välttämättä kytkeydy suunnitelmiin. Suurin osa tutkimuksen toiseen vaiheeseen osallistuneista organisaatioista koki lakimuutoksen onnistuneeksi tavaksi edistää työkyvyn hallintaa. Osallistuneissa organisaatioissa työkyvyn hallinta ja varhainen tuki on tullut viime vuosina keskimäärin systemaattisemmaksi ja tavoitteellisemmaksi. Haastateltavat kuitenkin korostivat organisaation omaa toimintaa ja valmiutta tärkeämmäksi työkyvyn hallinnassa. Haastateltavat pitivät suunnitelmien tekoa melko hyödyllisenä työkyvyn hallinnan kannalta ja osasivat mainita esimerkkejä hyvistä työkykykäytännöistä. Tavoitteiden seuranta ja mittaaminen ei kuitenkaan ole niin systemaattista kuin laajat suunnitelmat antaisivat olettaa. Tavoitteet on suunnitelmissa ilmaistu tyypillisesti yleisellä tasolla, jolloin niitä on vaikea mitata tai asettaa tavoitetasoja. Työpaikoilla seurataankin tyypillisesti helposti mitattavia asioita, kuten työtapaturmia, sairauspoissaoloja ja ennenaikaisia eläköitymisiä. Nämä kuvastavat myöhäisen vaiheen ongelmia. Varhaisen vaiheen tunnistamista tai ennaltaehkäisyn toteutumista ei seurata, oletettavasti niiden vaikean mitattavuuden vuoksi, vaikka tavoitteista nämä teemat löytyvät. Työkyvyn hallinnan kehittäminen on monivaiheinen prosessi, joka lähteäkseen käyntiin edellyttää yleistä tietoisuutta työkyvyn hallinnasta sekä henkilöstöasioista vastaavien tahojen kykyä kommunikoida muun johdon kanssa työkyvyn hallinnan kustannusvaikuttavuudesta. Onnistunut työkyvyn hallinta edellyttää lisäksi, että johto on sitoutunut siihen, sisäinen viestintä esimiehille ja työntekijöille toimii ja että henkilöstö osallistuu prosessiin

Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS2 Films

Semiconducting 2D materials, such as SnS2, hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS2 films has remained a great challenge. Herein, continuous wafer-scale 2D SnS2 films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 degrees C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS2 films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS2 films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors.Peer reviewe

Ultrathin Oxide Films by Atomic Layer Deposition on Graphene

In this paper, a method is presented to create and characterize mechanically robust, free standing, ultrathin, oxide films with controlled, nanometer-scale thickness using Atomic Layer Deposition (ALD) on graphene. Aluminum oxide films were deposited onto suspended graphene membranes using ALD. Subsequent etching of the graphene left pure aluminum oxide films only a few atoms in thickness. A pressurized blister test was used to determine that these ultrathin films have a Young's modulus of 154 \pm 13 GPa. This Young's modulus is comparable to much thicker alumina ALD films. This behavior indicates that these ultrathin two-dimensional films have excellent mechanical integrity. The films are also impermeable to standard gases suggesting they are pinhole-free. These continuous ultrathin films are expected to enable new applications in fields such as thin film coatings, membranes and flexible electronics.Comment: Nano Letters (just accepted

Controlling the refractive index and third-order nonlinearity of polyimide/Ta2O5 nanolaminates for optical applications

Peer reviewe

Review Article : Atomic layer deposition of optoelectronic materials

Optoelectronic materials can source, detect, and control light wavelengths ranging from gamma and x rays to ultraviolet, visible, and infrared regions. Optoelectronic devices are usually systems that transduce electricity to optical signal or vice versa. Optoelectronic devices include many modern necessities such as lamps, displays, lasers, solar cells, and various photodetectors. Some important research topics in the field of optoelectronics materials are development of new materials, new technologies for fabricating materials, and design of device structures. Atomic layer deposition (ALD) is a technology that was developed in the early 1970s for manufacturing high-quality luminescent and dielectric films to be used in AC-driven thin film electroluminescent (TFEL) displays. Monochromic yellow-black displays based on a ZnS:Mn luminescent layer have been manufactured industrially using ALD since the mid-1980s. Multicolor displays (green-yellow-red) were successfully realized by filtering the broad emission band of ZnS:Mn or adding another luminescent material, e.g., green-emitting ZnS:Tb or SrS:Ce. However, applicable full-color AC TFEL devices could not be developed because of the lack of an efficient deep blue-emitting phosphor. Currently, the most promising application area in TFEL displays is transparent displays, which are commonly used in various vehicles. In the mid-1980s, epitaxial III-V semiconductors were studied using ALD. It was shown that manufacturing real epitaxial [atomic layer epitaxy (ALE)] films is possible for different III (Al, Ga, In) and V (N, P, As) materials. The advantages of ALE processing compared to more traditional metalorganic chemical vapor deposition or molecular beam epitaxy methods have remained low, however, and ALE is not used on a large scale. Research continues to be carried out using ALE, especially with nitride films. Thin film solar cells have continuously received attention in ALD research. ALD films may be used as both an absorber (CdTe, SnS) and a passivation [In2S3, Zn(O,S)] material. However, in the solar cell field, the real industrial-level use is in passivation of silicon cells. Thin ALD Al2O3 film effectively passivates all types of silicon cells and improves their efficiency. Transition metal dichalcogenides are emerging 2D materials that have potential uses as channel materials in field-effect transistors, as well as phototransistors and other optoelectronic devices. The problem with achieving large-scale use of these 2D materials is the lack of a scalable, low-temperature process for fabricating high-quality, large-area films. ALD is proposed as a solution for these limitations. This review covers all of these ALD applications in detail. (C) 2019 Author(s).Peer reviewe

Effect of hot calendering on physical properties and water vapor transfer resistance of bacterial cellulose films

This work investigates the effect of hot calendering on bacterial cellulose (BC) films properties, aiming the achievement of good transparency and barrier property. A comparison was made using vegetal cellulose (VC) films on a similar basis weight of around 40 g.m-2. The optical-structural, mechanical and barrier property of BC films were studied and compared with those of highly beaten VC films. The Youngs moduli and tensile index of the BC films are much higher than those obtained for VC (14.5 16.2 GPa vs 10.8 8.7 GPa and 146.7 64.8 N.m.g-1 vs 82.8 40.5 N.m.g-1), respectively. Calendering increased significantly the transparency of BC films from 53.0 % to 73.0 %. The effect of BC ozonation was also studied. Oxidation with ozone somewhat enhanced the brightness and transparency of the BC films, but at the expenses of slightly lower mechanical properties. BC films exhibited a low water vapor transfer rate, when compared to VC films and this property decreased by around 70 % following calendering, for all films tested. These results show that calendering could be used as a process to obtain films suitable for food packaging applications, where transparency, good mechanical performance and barrier properties are important. The BC films obtained herein are valuable products that could be a good alternative to the highly used plastics in this industry.The authors thank FCT (Fundação para a Ciência e Tecnologia) and FEDER (Fundo Europeu de Desenvolvimento Regional) for the financial support of the project FCT PTDC/AGR-FOR/3090/2012— FCOMP-01-0124-FEDER-027948 and the awarding of a research grant for Vera Costa

Biotransformation of lanthanum by Aspergillus niger

Lanthanum is an important rare earth element and has many applications in modern electronics and catalyst manufacturing. However, there exist several obstacles in the recovery and cycling of this element due to a low average grade in exploitable deposits and low recovery rates by energy-intensive extraction procedures. In this work, a novel method to transform and recover La has been proposed using the geoactive properties of Aspergillus niger. La-containing crystals were formed and collected after A. niger was grown on Czapek-Dox agar medium amended with LaCl 3. Energy-dispersive X-ray analysis (EDXA) showed the crystals contained C, O, and La; scanning electron microscopy revealed that the crystals were of a tabular structure with terraced surfaces. X-ray diffraction identified the mineral phase of the sample as La 2(C 2O 4) 3·10H 2O. Thermogravimetric analysis transformed the oxalate crystals into La 2O 3 with the kinetics of thermal decomposition corresponding well with theoretical calculations. Geochemical modelling further confirmed that the crystals were lanthanum decahydrate and identified optimal conditions for their precipitation. To quantify crystal production, biomass-free fungal culture supernatants were used to precipitate La. The results showed that the precipitated lanthanum decahydrate achieved optimal yields when the concentration of La was above 15 mM and that 100% La was removed from the system at 5 mM La. Our findings provide a new aspect in the biotransformation and biorecovery of rare earth elements from solution using biomass-free fungal culture systems. </p

Recommended reading list of early publications on atomic layer deposition-Outcome of the "Virtual Project on the History of ALD"

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency. (C) 2016 Author(s).Peer reviewe