Nanoscale detection of a single fundamental charge in ambient conditions using the NV - Center in diamond

Single charge nanoscale detection in ambient conditions is a current frontier in metrology that has diverse interdisciplinary applications. Here, such single charge detection is demonstrated using two nitrogen-vacancy (NV) centers in diamond. One NV center is employed as a sensitive electrometer to detect the change in electric field created by the displacement of a single electron resulting from the optical switching of the other NV center between its neutral (NV0) and negative (NV-) charge states. As a consequence, our measurements also provide direct insight into the charge dynamics inside the material

Weak electron irradiation suppresses the anomalous magnetization of N-doped diamond crystals

Several diamond bulk crystals with a concentration of electrically neutral single substitutional nitrogen atoms of ≲80 ppm, the so-called C or P1 centers, are irradiated with electrons at 10 MeV energy and low fluence. The results show a complete suppression of the irreversible behavior in field and temperature of the magnetization below 30 K, after a decrease in ≲40 ppm in the concentration of C centers produced by the electron irradiation. This result indicates that magnetic C centers are at the origin of the large hysteretic behavior found recently in nitrogen-doped diamond crystals. This is remarkable because of the relatively low density of C centers, stressing the extraordinary role of the C centers in triggering those phenomena in diamond at relatively high temperatures. After annealing the samples at high temperatures in vacuum, the hysteretic behavior is partially recovered

Screening and engineering of colour centres in diamond

We present a high throughput and systematic method for the screening of colour centres in diamond with the aim of searching for and reproducibly creating new optical centres down to the single defect level, potentially of interest for a wide range of diamond-based quantum applications. The screening method presented here should, moreover, help to identify some already indexed defects among hundreds in diamond (Zaitsev 2001 Optical Properties of Diamond (Berlin: Springer)) but also some promising defects of a still unknown nature, such as the recently discovered ST1 centre (Lee et al 2013 Nat. Nanotechnol. 8 487; John et al 2017 New J. Phys. 19 053008). We use ion implantation in a systematic manner to implant several chemical elements. Ion implantation has the advantage of addressing single atoms inside the bulk with defined depth and high lateral resolution, but the disadvantage of producing intrinsic defects. The implanted samples are annealed in vacuum at different temperatures (between 600 degrees C and 1600 degrees C with 200 degrees C steps) and fully characterised at each step in order to follow the evolution of the defects: formation, dissociation, diffusion, re-formation and charge state, at the ensemble level and, if possible, at the single centre level. We review the unavoidable ion implantation defects (such as the GR1 and 3H centres), discuss ion channeling and thermal annealing and estimate the diffusion of the vacancies, nitrogen and hydrogen. We use different characterisation methods best suited for our study (from widefield fluorescence down to subdiffraction optical imaging of single centres) and discuss reproducibility issues due to diamond and defect inhomogeneities. Nitrogen is also implanted for reference, taking advantage of the considerable knowledge on NV centres as a versatile sensor in order to retrieve or deduce the conditions and local environment in which the different implanted chemical elements are embedded. We show here the preliminary promising results of a long-term study and focus on the elements O, Mg, Ca, F and P from which fluorescent centres were found.Peer reviewe

Production of bulk NV centre arrays by shallow implantation and diamond CVD overgrowth

The nanometer-scale engineering of single nitrogen-vacancy (NV) centres in diamond can be obtained by low-energy (keV) nitrogen implantation with limited straggling. However, shallow NV centres (a few nanometres deep) generally have inferior overall properties than deeply implanted or deep native NV centres, due to the surface proximity. It has already been shown that the spin coherence time of shallow NVs is improved by overgrowth of a thin diamond layer. However the influence of the overgrowth on the survival, the optical properties and the charge state of the centres has not been studied in detail. In this article, we have overgrown three diamond samples (containing NV centres implanted at different depths) using different procedures. We show the successful overgrowth of a pattern of very shallow (2 nm) implanted NV centres using an optimised overgrowth process. Furthermore, the charge state of ensembles and single NV centres was found to be shifted from NV0 to NV− and stabilised in the negative charge state after overgrowth. The combination of low-energy high-resolution ion implantation and high-purity chemical vapour deposition (CVD) overgrowth procedures opens the way towards the fabrication of scalable and efficient quantum devices based on single defects in diamond

Strain engineering of the electronic states of silicon-based quantum emitters

Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy, and it was mostly focused on light extraction and guiding. Here we address the control of the electronic states of carbon-related impurities (G-centers) via strain engineering. By embedding them in patches of silicon on insulator and topping them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18 meV and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected. Our technique can be extended to other impurities and Si-based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic circuits