Diamond power devices: state of the art, modelling, figures of merit and future perspective

Abstract: With its remarkable electro-thermal properties such as the highest known thermal conductivity (~22 W cm−1∙K−1 at RT of any material, high hole mobility (>2000 cm2 V−1 s−1), high critical electric field (>10 MV cm−1), and large band gap (5.47 eV), diamond has overwhelming advantages over silicon and other wide bandgap semiconductors (WBGs) for ultra-high-voltage and high-temperature (HT) applications (>3 kV and >450 K, respectively). However, despite their tremendous potential, fabricated devices based on this material have not yet delivered the expected high performance. The main reason behind this is the absence of shallow donor and acceptor species. The second reason is the lack of consistent physical models and design approaches specific to diamond-based devices that could significantly accelerate their development. The third reason is that the best performances of diamond devices are expected only when the highest electric field in reverse bias can be achieved, something that has not been widely obtained yet. In this context, HT operation and unique device structures based on the two-dimensional hole gas (2DHG) formation represent two alternatives that could alleviate the issue of the incomplete ionization of dopant species. Nevertheless, ultra-HT operations and device parallelization could result in severe thermal management issues and affect the overall stability and long-term reliability. In addition, problems connected to the reproducibility and long-term stability of 2DHG-based devices still need to be resolved. This review paper aims at addressing these issues by providing the power device research community with a detailed set of physical models, device designs and challenges associated with all the aspects of the diamond power device value chain, from the definition of figures of merit, the material growth and processing conditions, to packaging solutions and targeted applications. Finally, the paper will conclude with suggestions on how to design power converters with diamond devices and will provide the roadmap of diamond device development for power electronics

X-ray white beam topography of self-organized domains in flux-grown BaTiO3 single crystals

The phenomenon of self-organization of domains into a “square-net pattern” in single-crystal, flux-grown BaTiO3 several degrees below the ferroelectric to paraelectric phase transition was investigated using in situ synchrotron x-ray topography. The tetragonal distortion of the crystal was determined by measuring the angular separation between the diffraction images received from 90° a and c domains in the projection topographs, and shows a rapid decrease towards 110 °C, the onset temperature for self-organization. The onset of self-organization is accompanied by bending of the {100} lattice planes parallel to the crystal surface, which produces a strain that persists up to and beyond the Curie temperature, where the crystal becomes cubic and the self-organized domains disappear. At the Curie point, the bending angle α100=8.1(±0.3)mrad is at a maximum and corresponds to the radius of curvature of the surface being 16.3(±0.6) mm

Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called deltadoped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6K<T<450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.660.8 cm2/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.14 page

Dynamics of a linear oscillator connected to a small strongly non-linear hysteretic absorber

The present investigation deals with the dynamics of a two-degrees-of-freedom system which consists of a main linear oscillator and a strongly nonlinear absorber with small mass. The nonlinear oscillator has a softening hysteretic characteristic represented by a Bouc-Wen model. The periodic solutions of this system are studied and their calcu- lation is performed through an averaging procedure. The study of nonlinear modes and their stability shows, under specific conditions, the existence of localization which is responsible for a passive irreversible energy transfer from the linear oscillator to the nonlinear one. The dissipative effect of the nonlinearity appears to play an important role in the energy transfer phenomenon and some design criteria can be drawn regarding this parameter among others to optimize this energy transfer. The free transient response is investigated and it is shown that the energy transfer appears when the energy input is sufficient in accordance with the predictions from the nonlinear modes. Finally, the steady-state forced response of the system is investigated. When the input of energy is sufficient, the resonant response (close to nonlinear modes) experiences localization of the vibrations in the nonlinear absorber and jump phenomena

A focused ultrasound treatment system for moving targets (part I):generic system design and in-silico first-stage evaluation

Background Focused ultrasound (FUS) is entering clinical routine as a treatment option. Currently, no clinically available FUS treatment system features automated respiratory motion compensation. The required quality standards make developing such a system challenging. Methods A novel FUS treatment system with motion compensation is described, developed with the goal of clinical use. The system comprises a clinically available MR device and FUS transducer system. The controller is very generic and could use any suitable MR or FUS device. MR image sequences (echo planar imaging) are acquired for both motion observation and thermometry. Based on anatomical feature tracking, motion predictions are estimated to compensate for processing delays. FUS control parameters are computed repeatedly and sent to the hardware to steer the focus to the (estimated) target position. All involved calculations produce individually known errors, yet their impact on therapy outcome is unclear. This is solved by defining an intuitive quality measure that compares the achieved temperature to the static scenario, resulting in an overall efficiency with respect to temperature rise. To allow for extensive testing of the system over wide ranges of parameters and algorithmic choices, we replace the actual MR and FUS devices by a virtual system. It emulates the hardware and, using numerical simulations of FUS during motion, predicts the local temperature rise in the tissue resulting from the controls it receives. Results With a clinically available monitoring image rate of 6.67 Hz and 20 FUS control updates per second, normal respiratory motion is estimated to be compensable with an estimated efficiency of 80%. This reduces to about 70% for motion scaled by 1.5. Extensive testing (6347 simulated sonications) over wide ranges of parameters shows that the main source of error is the temporal motion prediction. A history-based motion prediction method performs better than a simple linear extrapolator. Conclusions The estimated efficiency of the new treatment system is already suited for clinical applications. The simulation-based in-silico testing as a first-stage validation reduces the efforts of real-world testing. Due to the extensible modular design, the described approach might lead to faster translations from research to clinical practice

Semantic-preserving mesh direct drilling

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Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers

International audienceThe ability to precisely control the thermal conductivity (κ) of a material is fundamental in the development of on-chip heat management or energy conversion applications. Nanostructuring permits a marked reduction of κ of single-crystalline materials, as recently demonstrated for silicon nanowires. However, silicon-based nanostructured materials with extremely low κ are not limited to nanowires. By engineering a set of individual phonon-scattering nanodot barriers we have accurately tailored the thermal conductivity of a single-crystalline SiGe material in spatially defined regions as short as ∼15 nm. Single-barrier thermal resistances between 2 and 4×10−9 m2 K W−1 were attained, resulting in a room-temperature κ down to about 0.9 W m−1 K−1, in multilayered structures with as little as five barriers. Such low thermal conductivity is compatible with a totally diffuse mismatch model for the barriers, and it is well below the amorphous limit. The results are in agreement with atomistic Green’s function simulations