22 research outputs found

    An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

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    Transmission electron microscopy with in situ ion irradiation has been used to examine the ionbeam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms

    Irradiation effects on microstructure change in nanocrystalline ceria – Phase, lattice stress, grain size and boundaries

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    With a wide variety of applications in numerous industries, ranging from biomedical to nuclear, ceramics such as ceria are key engineering materials. It is possible to significantly alter the materials functionality and therefore its applications by reducing the grain size to the nanometer size regime, at which point the unique varieties of grain boundaries and associated interfaces begin to dominate the material properties. Nanocrystalline films of cubic ceria deposited onto Si substrates have been irradiated with 3 MeV Au+ ions at temperatures of 300 and 400 K to evaluate their response to irradiation. It was observed that the films remained phase stable. Following a slight stress relief stage at low damage levels, the overall lattice is extremely stable up to high irradiation dose of ~34 displacements per atom. The grains were also observed to undergo a temperature-dependent grain growth process upon ion irradiation. This is attributed to a defect-driven mechanism in which the diffusion of defects from the collision cascade is critical. Formation of dislocations that terminate and stabilize at symmetric grain boundaries may be the limiting factor in the grain growth and overall energy reduction of the system. Utilizing ion modification, possible improvement of the adhesion of thin films and reduction of the probability of detrimental effects of stress-induced problems are discussed

    Transmission electron microscopy of the amorphization of copper indium diselenide by in situ ion irradiation

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    Copper indium diselenide (CIS), along with its derivatives Cu(In,Ga)(Se,S)2, is a prime candidate for use in the absorber layers of photovoltaic devices. Due to its ability to resist radiation damage, it is particularly well suited for use in extraterrestrial and other irradiating environments. However, the nature of its radiation hardness is not well understood. In this study, transmission electron microscopy (TEM) with in situ ion irradiation was used to monitor the dynamic microstructural effects of radiation damage on CIS. Samples were bombarded with 400 keV xenon ions to create large numbers of atomic displacements within the thickness of the TEM samples and thus explore the conditions under which, if any, CIS could be amorphized. By observing the impact of heavily damaging radiation in situ—rather than merely the end-state possible in ex situ experiments—at the magnifications allowed by TEM, it was possible to gain an understanding of the atomistic processes at work and the underlying mechanism that give rise to the radiation hardness of CIS. At 200 K and below, it was found that copper-poor samples could be amorphized and copper-rich samples could not. This difference in behavior is linked to the crystallographic phases that are present at different compositions. Amorphization was found to progress via a combination of one- and two-hit processes. The radiation hardness of CIS is discussed in terms of crystallographic structures/defects and the consequences these have for the ability of the material to recover from the effects of displacing radiatio

    Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon

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    In this paper we present a detailed study in which the formation, by heavy ion impact, and thermal recrystallisation of individual amorphous zones have been studied using in-situ transmission electron microscopy. In agreement with previous work, we observe a reduction in the total volume of amorphous material contained within the amorphous zones following thermal annealing over a wide range of temperatures. When the evolution of the individual amorphous zones is followed, those with similar starting sizes are observed to recrystallise over a range of temperatures from 70 ÂşC to 500 ÂşC. The temperature at which an amorphous zone fully recrystallises does not appear to be correlated with initial size. In addition, zones are occasionally observed to increase in size temporarily on some isochronal annealing steps. Furthermore, observations during a ramp anneal show that many zones recrystallise in a stepwise manner separated by periods of stability. These phenomenon are discussed in terms of the I-V pair

    Anomalous annealing behavior of isolated amorphous zones in silicon

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    The formation and annealing of individual amorphous zones in silicon have been studied using in situ transmission electron microscopy. This technique enables us to identify anomalous behavior that cannot be deduced from statistical studies. Zones were formed at room temperature by impacts of single 200 keV Xe+ ions and imaged using structure factor contrast under down-zone conditions. Irradiation to fluences in the range 1011–1012 ions/cm2, results in small zones of black contrast (typically of order 1 nm in radius) which are clearly visible with minimal overlap. In agreement with earlier work, we observe a reduction in the total volume of amorphous material upon annealing over a temperature range from room temperature to 500 °C. Disappearance of individual zones with the same starting radius is observed to occur over a wide range of temperatures and in a small number of cases, zones are observed to increase in size during annealing. A discussion of these effects, based on the bond defect or I–V pair is presented

    Helium trapping in carbide precipitates in a tempered F82H ferritic–martensitic steel

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    The microstructural changes of a tempered F82H ferritic–martensitic steel following He implantation at 60 and 500 °C have been examined by transmission electron microscopy (TEM) and atom probe tomography (APT). After irradiation at 500 °C, numerous He bubbles were formed throughout the matrix, whereas after irradiation at 60 °C, no bubbles were seen to form in the matrix. In both irradiations, He bubbles were observed to have formed within large carbide precipitates, determined by APT compositional analysis to be M23C6. The observed preferential He bubble formation in carbides during low temperature He irradiation occurs as a result of the diffusing He being trapped in the carbide due to the strong He–C bond. As the He concentration increases in the carbide due to trapping, He bubbles are formed

    Phase instabilities in austenitic steels during particle bombardment at high and low dose rates q

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    International audienceDisruption of phase stability by energetic particle bombardment is a major challenge in designing advanced radiation-tolerant alloys and ion beam processing of nanocomposites. Particularly, ballistic dissolution susceptibility of different solute nanocluster species in alloys is poorly understood. Here, low dose rate neutron irradiations were conducted on a Fe-Cr-Ni based austenitic steel in the BOR-60 reactor (9.4 10 7 dpa/s, 318 C) followed by accelerated dose rate ion irradiations at multiple temperatures (10 3 dpa/s, 380-420 C). Using atom probe tomography, the stability of radiation-enhanced Cu-rich and radiation-induced Ni-Si-Mn-rich nanoclusters was evaluated. During neutron irradiation, Cu-rich clusters nucleated with their core concentrations progressively increasing with dose, while Ni-Si-Mn-rich clusters formed and evolved into G-phase precipitates. Ion irradiations dramatically altered the nanoclusters. Curich clusters were ballistically dissolved, but Ni-Si-Mn-rich clusters remained stable and coarsened with dose at 400 and 420 C, highlighting that different nanocluster species in a single microstructure can have innately distinct ballistic dissolution susceptibilities. Solute-specific recoil rates were incorporated into the Heinig precipitate stability model, which shows that in addition to radiation-enhanced diffusion,recovery from ballistic dissolution depends on solute concentration gradient near cluster interfaces.The combined experimental-modeling study quantified the critical temperatures and damage rates where ballistic dissolution dominates for each cluster species

    Phase instabilities in austenitic steels during particle bombardment at high and low dose rates q

    No full text
    International audienceDisruption of phase stability by energetic particle bombardment is a major challenge in designing advanced radiation-tolerant alloys and ion beam processing of nanocomposites. Particularly, ballistic dissolution susceptibility of different solute nanocluster species in alloys is poorly understood. Here, low dose rate neutron irradiations were conducted on a Fe-Cr-Ni based austenitic steel in the BOR-60 reactor (9.4 10 7 dpa/s, 318 C) followed by accelerated dose rate ion irradiations at multiple temperatures (10 3 dpa/s, 380-420 C). Using atom probe tomography, the stability of radiation-enhanced Cu-rich and radiation-induced Ni-Si-Mn-rich nanoclusters was evaluated. During neutron irradiation, Cu-rich clusters nucleated with their core concentrations progressively increasing with dose, while Ni-Si-Mn-rich clusters formed and evolved into G-phase precipitates. Ion irradiations dramatically altered the nanoclusters. Curich clusters were ballistically dissolved, but Ni-Si-Mn-rich clusters remained stable and coarsened with dose at 400 and 420 C, highlighting that different nanocluster species in a single microstructure can have innately distinct ballistic dissolution susceptibilities. Solute-specific recoil rates were incorporated into the Heinig precipitate stability model, which shows that in addition to radiation-enhanced diffusion,recovery from ballistic dissolution depends on solute concentration gradient near cluster interfaces.The combined experimental-modeling study quantified the critical temperatures and damage rates where ballistic dissolution dominates for each cluster species
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