PLAN DE CUIDADOS ESTÁNDAR EN POST-OPERADOS DE ARTROPLASTIA DE RODILLA (PROYECTO GACELA).

Descriptive and retrospective study of 200 patients who have been subjected to a Knee prosthesis surgical intervention in the orthopedic department of the Hospital Complexo Hospitalario Universitario de Vigo. An individualized care plan computerized according to the Gacela project has been implemented. Forty patients have been excluded from the study because even if they had followed a plan, it only included actions. It was only considered the objectives and diagnosis of the individualized care plan that have been chosen by nurses, choosing those objectives that have been selected more than 15 times and those diagnosis that have been selected more than 20 times. When executing the study, the historical register of the Gacela project was used. The goal was to develop a standard care plan from the daily practice of the nurses and whose objectives would be saving time in care planning, using a job methodology.Estudio descriptivo retrospectivo de 200 pacientes que han sido intervenidos de una prótesis de rodilla en la unidad de traumatología del Complexo Hospitalario Universitario de Vigo y a los que se le ha aplicado un plan de cuidados individualizado informatizado, según el Plan Gacela. Del estudio se eliminan 40 pacientes porque aunque se les había abierto una plan ,éste solo contenía acciones. Se han valorado los objetivos y diagnósticos elegidos por las enfermeras en el plan de cuidados individualizado, eligiendo para formar parte del plan de cuidados estándar aquellos objetivos que habían sido seleccionados en más de 15 ocasiones y aquellos diagnósticos en más de 20 ocasiones. Para realizar este estudio recurrimos al histórico Gacela de nuestro hospital, teniendo como finalidad la elaboración de un plan de cuidados estándar que surgiese de la práctica diaria de las enfermeras y cuyos objetivos serían facilitar el trabajo, ahorrando tiempo en la planificación además de utilizar una metodología de trabajo

Observation of Faraday rotation from a single confined spin

Ability to read-out the state of a single confined spin lies at the heart of solid-state quantum information processing. While all-optical spin measurements using Faraday rotation has been successfully implemented in ensembles of semiconductor spins, read-out of a single semiconductor spin has only been achieved using transport measurements based on spin-charge conversion. Here, we demonstrate an all-optical dispersive measurement of the spin-state of a single electron trapped in a semiconductor quantum dot. We obtain information on the spin state through conditional Faraday rotation of a spectrally detuned optical field, induced by the polarization- and spin-selective trion (charged quantum dot) transitions. To assess the sensitivity of the technique, we use an independent resonant laser for spin-state preparation. An all-optical dispersive measurement on single spins has the important advantage of channeling the measurement back-action onto a conjugate observable, thereby allowing for repetitive or continuous quantum nondemolition (QND) read-out of the spin-state. We infer from our results that there are of order unity back-action induced spin-flip Raman scattering events within our measurement timescale. Therefore, straightforward improvements such as the use of a solid-immersion lens and higher efficiency detectors would allow for back-action evading spin measurements, without the need for a cavity

Charge control in laterally coupled double quantum dots

We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunnelling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system.Comment: 4 pages, 4 figures submitted to PRB Rapid Com

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and time-resolved photoluminescence depending on temperature. Studying this material system is fundamental in view of the ongoing implementation of such QDs for nano memory devices. The structures studied in this work include a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow to discern the common spectral features around the emission energy of 1.8 eV related to the GaAs quantum well and the GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. Moreover, based on the considerable tunability of the QDs depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor platforms, due to the feasibility of a nearly defect-free growth of GaP on Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction spatial distribution

X-ray nanoimaging of Nd3+ optically active ions embedded in Sr0.5Ba0.5Nb2O6 nanocrystals

[EN] The spatial distribution of Sr0.5Ba0.5Nb2O6 nanocrystals is analyzed in a borate-based glass-ceramic by a synchrotron hard X-ray nanoimaging tool. Based on X-ray excited optical luminescence, we examined 2D projections of the Nd3+ optically active ions in the Sr0.5Ba0.5Nb2O6 nanocrystals, as well as in the glassy phase where they are embedded. Our findings reveal areas of agglomerations and/or clusters of nanocrystals ascribed to the diffusion coefficients of their constituent elements. They are characterized by high Nd3+ concentrations that may act as heterogeneous agents for the nucleation and growth of these nanocrystals. (C) 2017 Optical Society of AmericaMINECO, EU-FEDER and CSIC through the projects MAT2013-46649-C4-4-P, MAT201571070-REDC, MAT2016-75586-C4-2-P, MAT2016-75586-C4-4-P, 201550I021 and 201660I001, respectively. JAS acknowledges the Spanish Program Ramón y Cajal for his fellowship. We also thank the ESRF for the beam time allocated and experimental facilities.Martínez-Criado, G.; Alén, B.; Sans-Tresserras, JÁ.; Lozano-Gorrín, A.; Haro-González, P.; Martin, I.; Lavin, V. (2017). X-ray nanoimaging of Nd3+ optically active ions embedded in Sr0.5Ba0.5Nb2O6 nanocrystals. Optical Materials Express. 7(7):2424-2431. https://doi.org/10.1364/OME.7.002424S2424243177Nagata, K., Yamamoto, Y., Igarashi, H., & Okazaki, K. (1981). Properties of the hot-pressed strontium barium niobate ceramics. Ferroelectrics, 38(1), 853-856. doi:10.1080/00150198108209556Imai, T., Yagi, S., Yamazaki, H., & Ono, M. (1999). Effects of Heat Treatment on Photorefractive Sensitivity of Ce- and Eu-Doped Strontium Barium Niobate. Japanese Journal of Applied Physics, 38(Part 1, No. 4A), 1984-1988. doi:10.1143/jjap.38.1984Volk, T., Isakov, D., Salobutin, V., Ivleva, L., Lykov, P., Ramzaev, V., & Wöhlecke, M. (2004). Effects of Ni doping on properties of strontium–barium–niobate crystals. Solid State Communications, 130(3-4), 223-226. doi:10.1016/j.ssc.2004.01.039Romero, J. J., Andreeta, M. R. B., Andreeta, E. R. M., Bausá, L. E., Hernandes, A. C., & García Solé, J. (2004). Growth and characterization of Nd-doped SBN single crystal fibers. Applied Physics A, 78(7), 1037-1042. doi:10.1007/s00339-003-2151-3Chayapiwut, N., Honma, T., Benino, Y., Fujiwara, T., & Komatsu, T. (2005). Synthesis of Sm3+-doped strontium barium niobate crystals in glass by samarium atom heat processing. Journal of Solid State Chemistry, 178(11), 3507-3513. doi:10.1016/j.jssc.2005.09.002Haro-González, P., Martín, I. R., Martín, L. L., León-Luis, S. F., Pérez-Rodríguez, C., & Lavín, V. (2011). Characterization of Er3+ and Nd3+ doped Strontium Barium Niobate glass ceramic as temperature sensors. Optical Materials, 33(5), 742-745. doi:10.1016/j.optmat.2010.11.026Ivleva, L. I., Volk, T. R., Isakov, D. V., Gladkii, V. V., Polozkov, N. M., & Lykov, P. A. (2002). Growth and ferroelectric properties of Nd-doped strontium–barium niobate crystals. Journal of Crystal Growth, 237-239, 700-702. doi:10.1016/s0022-0248(01)01997-2Marcinkevičius, A., Juodkazis, S., Watanabe, M., Miwa, M., Matsuo, S., Misawa, H., & Nishii, J. (2001). Femtosecond laser-assisted three-dimensional microfabrication in silica. Optics Letters, 26(5), 277. doi:10.1364/ol.26.000277Sato, R., Benino, Y., Fujiwara, T., & Komatsu, T. (2001). YAG laser-induced crystalline dot patterning in samarium tellurite glasses. Journal of Non-Crystalline Solids, 289(1-3), 228-232. doi:10.1016/s0022-3093(01)00736-0Haro-González, P., Martín, L. L., González-Pérez, S., & Martín, I. R. (2010). Formation of Nd3+ doped Strontium Barium Niobate nanocrystals by two different methods. Optical Materials, 32(10), 1389-1392. doi:10.1016/j.optmat.2010.03.011Haro-González, P., Martín, I. R., & Creus, A. H. (2010). Nanocrystals distribution inside the writing lines in a glass matrix using Argon laser irradiation. Optics Express, 18(2), 582. doi:10.1364/oe.18.000582Haro-González, P., Martín, I. R., Arbelo-Jorge, E., González-Pérez, S., Cáceres, J. M., & Núñez, P. (2008). Laser irradiation in Nd3+ doped strontium barium niobate glass. Journal of Applied Physics, 104(1), 013112. doi:10.1063/1.2952011Kowalska, D., Haro-González, P., Martín, I. R., & Cáceres, J. M. (2010). Analysis of the optical properties of Er3+-doped strontium barium niobate nanocrystals using time-resolved laser spectroscopy. Applied Physics A, 99(4), 771-776. doi:10.1007/s00339-010-5716-yPellicer-Porres, J., Segura, A., Martínez-Criado, G., Rodríguez-Mendoza, U. R., & Lavín, V. (2012). Formation of nanostructures in Eu3+doped glass–ceramics: an XAS study. Journal of Physics: Condensed Matter, 25(2), 025303. doi:10.1088/0953-8984/25/2/025303Martínez-Criado, G., Alén, B., Sans, J. A., Homs, A., Kieffer, I., Tucoulou, R., … Yi, G. (2012). Spatially resolved X-ray excited optical luminescence. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 284, 36-39. doi:10.1016/j.nimb.2011.08.013Martínez-Criado, G., Sans, J. A., Segura-Ruiz, J., Tucoulou, R., Solé, A. V., Homs, A., … Alén, B. (2011). X-ray excited optical luminescence imaging of InGaN nano-LEDs. physica status solidi (c), 9(3-4), 628-630. doi:10.1002/pssc.201100430Villanova, J., Segura-Ruiz, J., Lafford, T., & Martinez-Criado, G. (2012). Synchrotron microanalysis techniques applied to potential photovoltaic materials. Journal of Synchrotron Radiation, 19(4), 521-524. doi:10.1107/s0909049512021383Smith, J., Akbari-Sharbaf, A., Ward, M. J., Murphy, M. W., Fanchini, G., & Kong Sham, T. (2013). Luminescence properties of defects in nanocrystalline ZnO. Journal of Applied Physics, 113(9), 093104. doi:10.1063/1.4794001Armelao, L., Heigl, F., Jürgensen, A., Blyth, R. I. R., Regier, T., Zhou, X.-T., & Sham, T. K. (2007). X-ray Excited Optical Luminescence Studies of ZnO and Eu-Doped ZnO Nanostructures. The Journal of Physical Chemistry C, 111(28), 10194-10200. doi:10.1021/jp071379fMartínez-Criado, G., Villanova, J., Tucoulou, R., Salomon, D., Suuronen, J.-P., Labouré, S., … Morse, J. (2016). ID16B: a hard X-ray nanoprobe beamline at the ESRF for nano-analysis. Journal of Synchrotron Radiation, 23(1), 344-352. doi:10.1107/s1600577515019839Jamieson, P. B., Abrahams, S. C., & Bernstein, J. L. (1968). Ferroelectric Tungsten Bronze‐Type Crystal Structures. I. Barium Strontium Niobate Ba0.27Sr0.75Nb2O5.78. The Journal of Chemical Physics, 48(11), 5048-5057. doi:10.1063/1.1668176Haro-González, P., Martín, I. R., & Hernández Creus, A. (2011). Nanocrystals formation on Ho3+ doped strontium barium niobate glass. Journal of Luminescence, 131(4), 657-661. doi:10.1016/j.jlumin.2010.11.011Lavı́n, V., Rodrı́guez-Mendoza, U. R., Martı́n, I. R., & Rodrı́guez, V. D. (2003). Optical spectroscopy analysis of the Eu3+ ions local structure in calcium diborate glasses. Journal of Non-Crystalline Solids, 319(1-2), 200-216. doi:10.1016/s0022-3093(02)01914-2Chernaya, T. S., Volk, T. R., Verin, I. A., Ivleva, L. I., & Simonov, V. I. (2002). Atomic structure of (Sr0.50Ba0.50)Nb2O6 single crystals in the series of (SrxBa1 − x )Nb2O6 compounds. Crystallography Reports, 47(2), 213-216. doi:10.1134/1.1466494Erbil, A., Cargill III, G. S., Frahm, R., & Boehme, R. F. (1988). Total-electron-yield current measurements for near-surface extended x-ray-absorption fine structure. Physical Review B, 37(5), 2450-2464. doi:10.1103/physrevb.37.2450Solé, V. A., Papillon, E., Cotte, M., Walter, P., & Susini, J. (2007). A multiplatform code for the analysis of energy-dispersive X-ray fluorescence spectra. Spectrochimica Acta Part B: Atomic Spectroscopy, 62(1), 63-68. doi:10.1016/j.sab.2006.12.002Martínez-Criado, G., Homs, A., Alén, B., Sans, J. A., Segura-Ruiz, J., Molina-Sánchez, A., … Yi, G.-C. (2012). Probing Quantum Confinement within Single Core–Multishell Nanowires. Nano Letters, 12(11), 5829-5834. doi:10.1021/nl303178uMartínez-Criado, G., Segura-Ruiz, J., Alén, B., Eymery, J., Rogalev, A., Tucoulou, R., & Homs, A. (2014). Exploring Single Semiconductor Nanowires with a Multimodal Hard X-ray Nanoprobe. Advanced Materials, 26(46), 7873-7879. doi:10.1002/adma.201304345Shyu, J.-J., & Wang, J.-R. (2000). Crystallization and Dielectric Properties of SrO-BaO-Nb2O5-SiO2Tungsten-Bronze Glass-Ceramics. Journal of the American Ceramic Society, 83(12), 3135-3140. doi:10.1111/j.1151-2916.2000.tb01694.

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of Γ and L quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of k ⋅ p theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50-meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method

Strong extinction of a far-field laser beam by a single quantum dot

Through the utilization of index-matched GaAs immersion lens techniques we demonstrate a record extinction (12%) of a far-field focused laser by a single InAs/GaAs quantum dot. This contrast level enables us to report for the first time resonant laser transmission spectroscopy on a single InAs/GaAs quantum dot without the need for phase-sensitive lock-in detection

Electrical control of a laterally ordered InAs/InP quantum dash array

We have fabricated an array of closely spaced quantum dashes starting from a planar array of self-assembled semiconductor quantum wires. The array is embedded in a metallic nanogap which we investigate by micro-photoluminescence as a function of a lateral electric field. We demonstrate that the net electric charge and emission energy of individual quantum dashes can be modified externally with performance limited by the size inhomogeneity of the self-assembling process

Compositional mapping by Z-contrast imaging

This research was sponsored by the Office of Basic Energy Sciences, Materials Sciences and Engineering Division, U.S. Department of Energy (SJP, MV), by the Spanish MCI (projects CONSOLIDER INGENIO 2010 CSD2009-00013 andTEC2008-06756-C03-02/TEC,) and the Junta de Andalucía (PAI research’s groups TEP-120 and TIC-145; project P08-TEP-03516).Peer Reviewe

Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots

Trabajo presentado al "Quantum Dot", celebrado en Nottingham (UK) del 26 al 30 de Abril de 2010.InAs/GaAs quantum dots exposed to Sb after growth exhibit spectral changes. We study in the present paper an idealized nanostructure consisting of a homogeneous distribution of the quaternary GaInAsSb surrounded by a barrier of GaAs. We nd that the valence band o set is a critical parameter in modelling its electronic structure. Depending on this value, we predict a transition from type-I to type-II band alignment at a di erent Sb concentration. The addition of Sb to reduce the transition energy while keeping a type-I alignment is only of bene t at low Sb concentrationThis work was supported by the Spanish MICINN (projects TEC2008-06756-C03-01/02/TEC, CONSOLIDER INGENIO 2010 CSD2006-0019 and CSD2009-00013), the Junta de Andalucía (PAI research groups TEP-120 and TIC-145; project P08-TEP-03516) and Comunidad Autónoma de Madrid S2009ESP-1503.Peer reviewe