Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries

Abstract The presence of extended bi-dimensional defects is one of the key issues that hinder the use of wide band-gap materials hetero-epitaxially grown on silicon. In this work, we investigate, by STEM measurements and molecular dynamic simulations, the structure of two of the most important extended defect affecting the properties of cubic silicon carbide, 3C-SiC, hetero-epitaxially grown on (001) silicon substrates: (1) stacking faults (SFs) with their bounding threading dislocation arms, even along with unusual directions, and (2) inverted domain boundaries (IDBs). We found that these two defects are strictly correlated: IDBs lying in {111} planes are intrinsically coupled to one or more SFs. Moreover, we observed that threading partial dislocations (PDs), limiting the SFs, appear to have non-conventional line directions, such as [112], [123], and [134]. Molecular dynamics simulations show that [110] and [112] directions allow for stable dislocation structures, while in the unusual [123] and [134] directions, the PDs are composed of zig-zag dislocation lines in the [112] and [110] directions

Perfect crystals grown from imperfect interfaces

The fabrication of advanced devices increasingly requires materials with different properties to be combined in the form of monolithic heterostructures. In practice this means growing epitaxial semiconductor layers on substrates often greatly differing in lattice parameters and thermal expansion coefficients. With increasing layer thickness the relaxation of misfit and thermal strains may cause dislocations, substrate bowing and even layer cracking. Minimizing these drawbacks is therefore essential for heterostructures based on thick layers to be of any use for device fabrication. Here we prove by scanning X-ray nanodiffraction that mismatched Ge crystals epitaxially grown on deeply patterned Si substrates evolve into perfect structures away from the heavily dislocated interface. We show that relaxing thermal and misfit strains result just in lattice bending and tiny crystal tilts. We may thus expect a new concept in which continuous layers are replaced by quasi-continuous crystal arrays to lead to dramatically improved physical properties.ISSN:2045-232

Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling

Extending the functionality of ubiquitous Si-based microelectronic devices often requires combining materials with different lattice parameters and thermal expansion coefficients. In this paper, scanning X-ray nanodiffraction is used to map the lattice bending produced by thermal strain relaxation in heteroepitaxial Ge microcrystals of various heights grown on high aspect ratio Si pillars. The local crystal lattice tilt and curvature are obtained from experimental three-dimensional reciprocal space maps and compared with diffraction patterns simulated by means of the finite element method. The simulations are in good agreement with the experimental data for various positions of the focused X-ray beam inside a Ge microcrystal. Both experiment and simulations reveal that the crystal lattice bending induced by thermal strain relaxation vanishes with increasing Ge crystal height

Unveiling Planar Defects in Hexagonal Group IV Materials

Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I 3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I 3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present

Author Correction:In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4)

The Data availability statement of this article has been modified to add the accession link to the raw data. The old Data availability statement read “Materials and data that support the findings of this research are available within the paper. All data are available from the corresponding author upon request”. This has been replaced by “Materials and data that support the findings of this research are available within the paper. The raw data have been deposited at https://zenodo.org/record/4589484#.YEoEOy1Y7Sd”. This has been corrected in both the HTML and PDF version of the article.</p

Effectiveness of cardiac resynchronization therapy in heart failure patients with valvular heart disease: comparison with patients affected by ischaemic heart disease or dilated cardiomyopathy. The InSync/InSync ICD Italian Registry

AimsTo analyse the effectiveness of cardiac resynchronization therapy (CRT) in patients with valvular heart disease (a subset not specifically investigated in randomized controlled trials) in comparison with ischaemic heart disease or dilated cardiomyopathy patients.Methods and resultsPatients enrolled in a national registry were evaluated during a median follow-up of 16 months after CRT implant. Patients with valvular heart disease treated with CRT (n = 108) in comparison with ischaemic heart disease (n = 737) and dilated cardiomyopathy (n = 635) patients presented: (i) a higher prevalence of chronic atrial fibrillation, with atrioventricular node ablation performed in around half of the cases; (ii) a similar clinical and echocardiographic profile at baseline; (iii) a similar improvement of LVEF and a similar reduction in ventricular volumes at 6-12 months; (iv) a favourable clinical response at 12 months with an improvement of the clinical composite score similar to that occurring in patients with dilated cardiomyopathy and more pronounced than that observed in patients with ischaemic heart disease; (v) a long-term outcome, in term of freedom from death or heart transplantation, similar to patients affected by ischaemic heart disease and basically more severe than that of patients affected by dilated cardiomyopathy.ConclusionIn 'real world' clinical practice, CRT appears to be effective also in patients with valvular heart disease. However, in this group of patients the outcome after CRT does not precisely overlap any of the two other groups of patients, for which much more data are currently available