Monte Carlo Calculations for Liquid 4^4He at Negative Pressure

A Quadratic Diffusion Monte Carlo method has been used to obtain the equation of state of liquid $^4$He including the negative pressure region down to the spinodal point. The atomic interaction used is a renewed version (HFD-B(HE)) of the Aziz potential, which reproduces quite accurately the features of the experimental equation of state. The spinodal pressure has been calculated and the behavior of the sound velociy around the spinodal density has been analyzed.Comment: 10 pages, RevTex 3.0, with 4 PostScript figures include

To wet or not to wet: that is the question

Wetting transitions have been predicted and observed to occur for various combinations of fluids and surfaces. This paper describes the origin of such transitions, for liquid films on solid surfaces, in terms of the gas-surface interaction potentials V(r), which depend on the specific adsorption system. The transitions of light inert gases and H2 molecules on alkali metal surfaces have been explored extensively and are relatively well understood in terms of the least attractive adsorption interactions in nature. Much less thoroughly investigated are wetting transitions of Hg, water, heavy inert gases and other molecular films. The basic idea is that nonwetting occurs, for energetic reasons, if the adsorption potential's well-depth D is smaller than, or comparable to, the well-depth of the adsorbate-adsorbate mutual interaction. At the wetting temperature, Tw, the transition to wetting occurs, for entropic reasons, when the liquid's surface tension is sufficiently small that the free energy cost in forming a thick film is sufficiently compensated by the fluid- surface interaction energy. Guidelines useful for exploring wetting transitions of other systems are analyzed, in terms of generic criteria involving the "simple model", which yields results in terms of gas-surface interaction parameters and thermodynamic properties of the bulk adsorbate.Comment: Article accepted for publication in J. Low Temp. Phy

Threshold criterion for wetting at the triple point

Grand canonical simulations are used to calculate adsorption isotherms of various classical gases on alkali metal and Mg surfaces. Ab initio adsorption potentials and Lennard-Jones gas-gas interactions are used. Depending on the system, the resulting behavior can be nonwetting for all temperatures studied, complete wetting, or (in the intermediate case) exhibit a wetting transition. An unusual variety of wetting transitions at the triple point is found in the case of a specific adsorption potential of intermediate strength. The general threshold for wetting near the triple point is found to be close to that predicted with a heuristic model of Cheng et al. This same conclusion was drawn in a recent experimental and simulation study of Ar on CO_2 by Mistura et al. These results imply that a dimensionless wetting parameter w is useful for predicting whether wetting behavior is present at and above the triple temperature. The nonwetting/wetting crossover value found here is w circa 3.3.Comment: 15 pages, 8 figure

The effect of silicon content on the microstructure and creep behavior in die-cast magnesium AS alloys

The effect of increasing levels of silicon on the microstructure and creep properties of high-pressure die-cast Mg-Al-Si (AS) alloys has been investigated. The morphology of the Mg2Si phase in die-cast AS alloys was found to be a function of the silicon content. The Mg2Si particles in castings with up to 1.14 wt pct Si have a Chinese script morphology. For AS21 alloys with silicon contents greater than 1.4 wt pet Si (greater than the alpha-Mg2Si binary eutectic point), some Mg2Si particles have a coarse blocky shape. Increasing the silicon content above the eutectic level results in an increase in the number of coarse faceted Mg2Si particles in the microstructure. Creep rates at 100 hours were found to decrease with increasing silicon content in AS-type alloys. The decrease in creep rate was most dramatic for silicon contents up to 1.1 wt pct. Further additions of silicon of up to 2.64 wt pct also resulted in significant decreases in creep rate

Nucleation in supersaturated solutions 3He in 4He at negative pressure.

Depending on the 3He concentration, thermal nucleation in 3-4He supersaturated liquid mixtures at negative pressures may be originated either by bubble or by 3rich drop formation. We have investigated this phenomenon within a density-functional approach, determining the regions in the pressure¿3He-concentration plane where bubbles or drops likely drive the nucleation process. As an illustrative example, we also give the homogeneous nucleation pressure corresponding to 50 and 100 mK temperature