167 research outputs found

    Electronic structure of nanoscale iron oxide particles measured by scanning tunneling and photoelectron spectroscopies

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    We have investigated the electronic structure of nano-sized iron oxide by scanning tunnelling microscopy (STM) and spectroscopy (STS) as well as by photoelectron spectroscopy. Nano particles were produced by thermal treatment of Ferritin molecules containing a self-assembled core of iron oxide. Depending on the thermal treatment we were able to prepare different phases of iron oxide nanoparticles resembling gamma-Fe2O3, alpha-Fe2O3, and a phase which apparently contains both gamma-Fe2O3 and alpha-Fe2O3. Changes to the electronic structure of these materials were studied under reducing conditions. We show that the surface band gap of the electronic excitation spectrum can differ from that of bulk material and is dominated by surface effects.Comment: REVTeX, 6 pages, 10 figures, submitted to PR

    Electrical characterization of p-GaAs epilayers disordered by doped spin-on-glass

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    Impurity-free disordering (IFD) of uniformly dopedp‐GaAsepitaxial layers was achieved using either undoped or doped (Ga or P) spin-on-glass (SOG) in conjunction with rapid thermal annealing in the temperature range from 800to925°C. Capacitance-voltage measurements showed a pronounced increase in the doping concentration (NA) in the near-surface region of the layers disordered using both undoped and P:SOG. The increase in NA showed an Arrhenius-like dependence on the inverse of annealing temperature. On the other hand, NA did not change significantly for Ga-doped SOG. These changes can be explained by the relative injection of excess gallium vacancies (VGa) during IFD of p‐GaAs by the different SOG layers. Deep-level transient spectroscopy showed a corresponding increase in the concentration of a defect HA (EV+0.39eV), which can be attributed to Cu, in the undoped and P:SOG disordered p‐GaAs layers, but not in the epilayers disordered by Ga:SOG. We have explained the increase in free carrier concentration by the segregation of Zn atoms towards the surface during the injection of VGa. The redistribution of Zn during disordering of buried marker layers in GaAs and Al₀.₆Ga₀.₄As using either undoped or Ga-doped SOG was verified by secondary-ion mass spectrometry.One of the authors P. N. K. D.d acknowledges the financial support of the Australian Research Council. A second sF. D. A.d is grateful to the National Research Foundation, South Africa, for its financial support

    Local environment of Nitrogen in GaN{y}As{1-y} epilayers on GaAs (001) studied using X-ray absorption near edge spectroscopy

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    X-ray absorption near-edge spectroscopy (XANES) is used to study the N environment in bulk GaN and in GaN{y}As{1-y} epilayers on GaAs (001), for y \~5%. Density-functional optimized structures were used to predict XANES via multiple-scattering theory. We obtain striking agreement for pure GaN. An alloy model with nitrogen pairs on Ga accurately predicts the threshold energy, the width of the XANES ``white line'', and features above threshold, for the given X-ray polarization. The presence of N-pairs may point to a role for molecular N_2 in epitaxial growth kinetics.Comment: Four pages (PRL style) with two figure

    Thrombospondin-1-N-Terminal Domain Induces a Phagocytic State and Thrombospondin-1-C-Terminal Domain Induces a Tolerizing Phenotype in Dendritic Cells

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    In our previous study, we have found that thrombospondin-1 (TSP-1) is synthesized de novo upon monocyte and neutrophil apoptosis, leading to a phagocytic and tolerizing phenotype of dendritic cells (DC), even prior to DC-apoptotic cell interaction. Interestingly, we were able to show that heparin binding domain (HBD), the N-terminal portion of TSP-1, was cleaved and secreted simultaneously in a caspase- and serine protease- dependent manner. In the current study we were interested to examine the role of HBD in the clearance of apoptotic cells, and whether the phagocytic and tolerizing state of DCs is mediated by the HBD itself, or whether the entire TSP-1 is needed. Therefore, we have cloned the human HBD, and compared its interactions with DC to those with TSP-1. Here we show that rHBD by itself is not directly responsible for immune paralysis and tolerizing phenotype of DCs, at least in the monomeric form, but has a significant role in rendering DCs phagocytic. Binding of TSP-1-C-terminal domain on the other hand induces a tolerizing phenotype in dendritic cells

    Molecular and cellular mechanisms underlying the evolution of form and function in the amniote jaw.

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    The amniote jaw complex is a remarkable amalgamation of derivatives from distinct embryonic cell lineages. During development, the cells in these lineages experience concerted movements, migrations, and signaling interactions that take them from their initial origins to their final destinations and imbue their derivatives with aspects of form including their axial orientation, anatomical identity, size, and shape. Perturbations along the way can produce defects and disease, but also generate the variation necessary for jaw evolution and adaptation. We focus on molecular and cellular mechanisms that regulate form in the amniote jaw complex, and that enable structural and functional integration. Special emphasis is placed on the role of cranial neural crest mesenchyme (NCM) during the species-specific patterning of bone, cartilage, tendon, muscle, and other jaw tissues. We also address the effects of biomechanical forces during jaw development and discuss ways in which certain molecular and cellular responses add adaptive and evolutionary plasticity to jaw morphology. Overall, we highlight how variation in molecular and cellular programs can promote the phenomenal diversity and functional morphology achieved during amniote jaw evolution or lead to the range of jaw defects and disease that affect the human condition

    Consortium for the Study of Pregnancy Treatments (Co-OPT) : An international birth cohort to study the effects of antenatal corticosteroids

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    Acknowledgments We are grateful to the Co-OPT collaborators from Finland, Iceland, Israel, Nova Scotia, and Scotland, who have provided high-quality patient data, without which the Co-OPT ACS cohort would not have been possible. We acknowledge Public Health Scotland for providing us with a secure data analytical platform in which to undertake this research and are particularly grateful to Anna Schneider who has been the data controller for this project. Co-OPT collaborators: Karel Allegaert (Belgium), Jasper Been (Netherlands), David Burgner (Australia), Sohinee Bhattacharya (UK), Kate Duhig (UK), Kristjana Einarsdóttir (Iceland), John Fahey (Canada), Lani Florian (UK), Abigail Fraser (UK), Mika Gissler (Finland), Cynthia Gyamfi-Bannerman (USA), Bo Jacobsson (Sweden), Eyal Krispin (Israel), Stefan Kuhle (Canada), Marius Lahti-Pulkkinen (Finland), Jessica Miller (Australia), Ben Mol (Australia), Sarah Murray (UK), Jane Norman (UK), Lars Henning Pedersen (Denmark), Richard Riley (UK), Devender Roberts (UK), Ewoud Schuit (Netherlands), Aziz Sheikh (UK), Ting Shi (UK), Joshua Vogel (Australia), Rachael Wood (UK), John Wright (UK), Helga Zoega (Australia). Funding Information: The Co-OPT ACS study is funded through a Wellcome Trust Clinical Career Development Fellowship grant (Funding Reference number 209560/Z/17) awarded to Sarah J Stock. The funders had no role in study design, data collection, data analysis, decision to publish, or preparation of the manuscript. The Sponsor of the study is the University of Edinburgh (www.ed.ac. uk), Sponsor reference AC19119. For the purpose of open access, the author has applied a CC BY public copyright licence to any Author Accepted Manuscript version arising from this submission.Peer reviewedPublisher PD

    Consortium for the Study of Pregnancy Treatments (Co-OPT): An international birth cohort to study the effects of antenatal corticosteroids

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    BACKGROUND: Antenatal corticosteroids (ACS) are widely prescribed to improve outcomes following preterm birth. Significant knowledge gaps surround their safety, long-term effects, optimal timing and dosage. Almost half of women given ACS give birth outside the "therapeutic window" and have not delivered over 7 days later. Overtreatment with ACS is a concern, as evidence accumulates of risks of unnecessary ACS exposure. METHODS: The Consortium for the Study of Pregnancy Treatments (Co-OPT) was established to address research questions surrounding safety of medications in pregnancy. We created an international birth cohort containing information on ACS exposure and pregnancy and neonatal outcomes by combining data from four national/provincial birth registers and one hospital database, and follow-up through linked population-level data from death registers and electronic health records. RESULTS AND DISCUSSION: The Co-OPT ACS cohort contains 2.28 million pregnancies and babies, born in Finland, Iceland, Israel, Canada and Scotland, between 1990 and 2019. Births from 22 to 45 weeks' gestation were included; 92.9% were at term (≥ 37 completed weeks). 3.6% of babies were exposed to ACS (67.0% and 77.9% of singleton and multiple births before 34 weeks, respectively). Rates of ACS exposure increased across the study period. Of all ACS-exposed babies, 26.8% were born at term. Longitudinal childhood data were available for 1.64 million live births. Follow-up includes diagnoses of a range of physical and mental disorders from the Finnish Hospital Register, diagnoses of mental, behavioural, and neurodevelopmental disorders from the Icelandic Patient Registers, and preschool reviews from the Scottish Child Health Surveillance Programme. The Co-OPT ACS cohort is the largest international birth cohort to date with data on ACS exposure and maternal, perinatal and childhood outcomes. Its large scale will enable assessment of important rare outcomes such as perinatal mortality, and comprehensive evaluation of the short- and long-term safety and efficacy of ACS

    High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

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    This chapter briefly describes the fundamentals of high-resolution electron microscopy techniques. In particular, the Peak Pairs approach for strain mapping with atomic column resolution, and a quantitative procedure to extract atomic column compositional information from Z-contrast high-resolution images are presented. It also reviews the structural, compositional, and strain results obtained by conventional and advanced transmission electron microscopy methods on a number of III–V semiconductor nanostructures and heterostructures
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