Subsidiary capability upgrading and parent-subsidiary relationship: insights from a Chinese acquisition in the UK

Purpose: - This study aims to explore capability upgrading of EMNE’s subsidiaries in developed countries and how the parent-subsidiary relationship influences such upgrading. Design/methodology/approach: - The study adopts an interdisciplinary approach to capability upgrading of EMNEs subsidiaries in developed countries. It employs a single case study to explore this under-research area. Finding: - the analysis challenges the orthodox view and suggests broad based capability upgrading has taken place in the EMNE acquired subsidiaries ranging from product, process, functional to intersectoral. In addition, the capability upgrading was contingent on the degree of subsidiary autonomy and subsidiary mandates. Originality/value: - This study represents one of the first to examine capability upgrading and parent-subsidiary relationship in the context of EMNEs’ internationalisation activities

Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors

In this work, we present a simulation study of vertically stacked lateral nanowires transistors (NWTs) considering various sources of statistical variability. Our simulation approach is based on various simulations techniques to capture the complexity in such ultra-scaled device

Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors

In this work, we investigated the performance of vertically stacked lateral nanowires transistors (NWTs) considering the effects of series resistance. Also, we consider the vertical positions of the lateral nanowires in the stack and diameter variation of the lateral NWTs as new sources of process variability

Integrated atomistic process and device simulation of decananometre MOSFETs

In this paper we present a methodology for the integrated atomistic process and device simulation of decananometre MOSFETs. The atomistic process simulations were carried out using the kinetic Monte Carlo process simulator DADOS, which is now integrated into the Synopsys 3D process and device simulation suite Taurus. The device simulations were performed using the Glasgow 3D statistical atomistic simulator, which incorporates density gradient quantum corrections. The overall methodology is illustrated in the atomistic process and device simulation of a well behaved 35 nm physical gate length MOSFET reported by Toshiba

Electron bifurcation mechanism and homoacetogenesis explain products yields in mixed culture anaerobic fermentations

Anaerobic fermentation of organic wastes using microbial mixed cultures is a promising avenue to treat residues and obtain added-value products. However, the process has some important limitations that prevented so far any industrial application. One of the main issues is that we are not able to predict reliably the product spectrum (i.e. the stoichiometry of the process) because the complex microbial community behaviour is not completely understood. To address this issue, in this work we propose a new metabolic network of glucose fermentation by microbial mixed cultures that incorporates electron bifurcation and homoacetogenesis. Our methodology uses NADH balances to analyse published experimental data and evaluate the new stoichiometry proposed. Our results prove for the first time the inclusion of electron bifurcation in the metabolic network as a better description of the experimental results. Homoacetogenesis has been used to explain the discrepancies between observed and theoretically predicted yields of gaseous H2 and CO2 and it appears as the best solution among other options studied. Overall, this work supports the consideration of electron bifurcation as an important biochemical mechanism in microbial mixed cultures fermentations and underlines the importance of considering homoacetogenesis when analysing anaerobic fermentations

Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks

Using ensemble Monte Carlo device simulations, this paper studies the impact of interface roughness and soft-optical phonon scattering on the performance of sub-100nm Si and strained Si MOSFETs with different high-k gate stacks. Devices with gate lengths down to 25nm have been investigated

Assessing local structural perturbations in proteins

BACKGROUND: Protein structure research often deals with the comparison of two or more structures of the same protein, for instance when handling alternative structure models for the same protein, point mutants, molecule movements, structure predictions, etc. Often the difference between structures is small, restricted to a local neighborhood, and buried in structural "noise" due to trivial differences resulting from experimental artifacts. In such cases, whole-structure comparisons by means of structure superposition may be unsatisfactory and researchers have to perform a tedious process of manually superposing different segments individually and/or use different frames of reference, chosen roughly by educated guessing. RESULTS: We have developed an algorithm to compare local structural differences between alternative structures of the same protein. We have implemented the algorithm through a computer program that performs the numerical evaluation and allows inspecting visually the results of the structure comparison. We have tested the algorithm on different kinds of model systems. Here we present the algorithm and some results to illustrate its characteristics. CONCLUSION: This program may provide an insight into the local structural changes produced in a protein structure by different interactions or modifications. It is convenient for the general user and it can be applied to standard or specific tasks on protein structure research

Business Case and Technology Analysis for 5G Low Latency Applications

A large number of new consumer and industrial applications are likely to change the classic operator's business models and provide a wide range of new markets to enter. This article analyses the most relevant 5G use cases that require ultra-low latency, from both technical and business perspectives. Low latency services pose challenging requirements to the network, and to fulfill them operators need to invest in costly changes in their network. In this sense, it is not clear whether such investments are going to be amortized with these new business models. In light of this, specific applications and requirements are described and the potential market benefits for operators are analysed. Conclusions show that operators have clear opportunities to add value and position themselves strongly with the increasing number of services to be provided by 5G.Comment: 18 pages, 5 figure

Fixed-Mobile Convergence in the 5G era: From Hybrid Access to Converged Core

The availability of different paths to communicate to a user or device introduces several benefits, from boosting enduser performance to improving network utilization. Hybrid access is a first step in enabling convergence of mobile and fixed networks, however, despite traffic optimization, this approach is limited as fixed and mobile are still two separate core networks inter-connected through an aggregation point. On the road to 5G networks, the design trend is moving towards an aggregated network, where different access technologies share a common anchor point in the core. This enables further network optimization in addition to hybrid access, examples are userspecific policies for aggregation and improved traffic balancing across different accesses according to user, network, and service context. This paper aims to discuss the ongoing work around hybrid access and network convergence by Broadband Forum and 3GPP. We present some testbed results on hybrid access and analyze some primary performance indicators such as achievable data rates, link utilization for aggregated traffic and session setup latency. We finally discuss the future directions for network convergence to enable future scenarios with enhanced configuration capabilities for fixed and mobile convergence.Comment: to appear in IEEE Networ