Improved Annealing Process for 6H-SiC p⁺-n Junction Creation by Al Implantation

International audienceFive-fold Al implantations at both room temperature and 300°C ranging from 25 keV to 300 keV and a total fluence of 1.75x10 15 cm-2 , have been performed in 6H-SiC epilayers to create p +-n junctions. The samples have been annealed at 1700°C during 30 mn in an inductively heated furnace especially configured. Surface effects, recrystallization, dopant distribution and electrical activation are investigated by XPS, RBS, SIMS and sheet resistance measurements. For both RT and 300°C-implanted samples, good recrystallization and surface stoichiometry are found as well as no dopant loosing and an interesting electrical activation (46% and 99%, respectively). Introduction p +-n junctions in SiC power devices must be realized by ion implantation due to very low diffusion coefficients of dopants in silicon carbide. SiC high density and its structural crystallinity involve a delicate post-implantation annealing. The implantation temperature, annealing environment, time and temperature of annealing and the heating rate are the essential parameters to reorder the crystal damage induced by ion implantation and to activate the dopants by migrating in SiC atomic sites. Initially, after ion implantation, almost all Al dopants are distributed in interstitial sites, where they are not electrically active. We utilized a JIPELEC TM rf induction furnace. This technique of annealing has significant advantages such as the very high rising slope in temperature and the very localized zone of heating (the susceptor). But this one implies high temperature variations, vertically in the enclosure and laterally on the surface of the SiC wafers. These temperature gradients may cause an etching of, or a layer deposition on the SiC surface. Moreover, Si is known to volatilize towards 1400°C at one atmosphere pressure, and in lack of a Si supersaturating vapor the carbonization of the surface is inevitable. This paper presents the results of an optimized thermal rf annealing, which avoids these problems

On Behalf of Children? The Plural Voting System in Belgium – from 1893 to 1919

No abstract. (This article did not undergo peer-review.

Improved Annealing Process for 6H-SiC p⁺-n Junction Creation by Al Implantation

International audienceFive-fold Al implantations at both room temperature and 300°C ranging from 25 keV to 300 keV and a total fluence of 1.75x10 15 cm-2 , have been performed in 6H-SiC epilayers to create p +-n junctions. The samples have been annealed at 1700°C during 30 mn in an inductively heated furnace especially configured. Surface effects, recrystallization, dopant distribution and electrical activation are investigated by XPS, RBS, SIMS and sheet resistance measurements. For both RT and 300°C-implanted samples, good recrystallization and surface stoichiometry are found as well as no dopant loosing and an interesting electrical activation (46% and 99%, respectively). Introduction p +-n junctions in SiC power devices must be realized by ion implantation due to very low diffusion coefficients of dopants in silicon carbide. SiC high density and its structural crystallinity involve a delicate post-implantation annealing. The implantation temperature, annealing environment, time and temperature of annealing and the heating rate are the essential parameters to reorder the crystal damage induced by ion implantation and to activate the dopants by migrating in SiC atomic sites. Initially, after ion implantation, almost all Al dopants are distributed in interstitial sites, where they are not electrically active. We utilized a JIPELEC TM rf induction furnace. This technique of annealing has significant advantages such as the very high rising slope in temperature and the very localized zone of heating (the susceptor). But this one implies high temperature variations, vertically in the enclosure and laterally on the surface of the SiC wafers. These temperature gradients may cause an etching of, or a layer deposition on the SiC surface. Moreover, Si is known to volatilize towards 1400°C at one atmosphere pressure, and in lack of a Si supersaturating vapor the carbonization of the surface is inevitable. This paper presents the results of an optimized thermal rf annealing, which avoids these problems

Study of 6H-SiC high voltage bipolar diodes under reverse biases

International audienceSilicon carbide presents electrical properties suitable for many applications especially for high voltage devices. 6H-SiC P+NN+ structures have been fabricated following ISE software simulations in order to block voltages as high as 1.5 kV. In particular, these diodes are realized by surrounding the emitter by a p-type region called junction termination extension (JTE). Electrical characterizations under reverse bias at, room temperature and in various environments (air, silicone oil) show a premature breakdown for the protected diodes. This breakdown is localized at the emitter periphery. Optical beam induced current (OBIC) measurements show a peak of photocurrent at the junction edge, indicating the presence of a high electric field. These results show a protection efficiency of 60% of the JTE. An electrical activation of the aluminum dopants implanted in the JTE around 30% is derived from the analysis of the presented results

Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics

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In Antisynthetase Syndrome, ACPA Are Associated With Severe and Erosive Arthritis: An Overlapping Rheumatoid Arthritis and Antisynthetase Syndrome

International audienceAbstract: Anticitrullinated peptide/protein antibodies (ACPA), which are highly specific for rheumatoid arthritis (RA), may be found in some patients with other systemic autoimmune diseases. The clinical significance of ACPA in patients with antisynthetase syndrome (ASS), a systemic disease characterized by the association of myositis, interstitial lung disease, polyarthralgia, and/or polyarthritis, has not yet been evaluated with regard to phenotype, prognosis, and response to treatment. ACPA-positive ASS patients were first identified among a French multicenter registry of patients with ASS. Additionally, all French rheumatology and internal medicine practitioners registered on the Club Rhumatismes et Inflammation web site were asked to report their observations of ASS patients with ACPA. The 17 collected patients were retrospectively studied using a standardized questionnaire and compared with 34 unselected ACPA-negative ASS patients in a case–control study. All ACPA-positive ASS patients suffered from arthritis versus 41% in the control group (P 7-year mean follow-up, extra-articular outcomes and survival were not different. ACPA-positive ASS patients showed an overlapping RA–ASS syndrome, were at high risk of refractory erosive arthritis, and might experience ASS flare when treated with antitumor necrosis factor drugs. In contrast, other biologics such as anti-CD20 mAb were effective in this context, without worsening systemic involvements

Velocity-space sensitivity of the time-of-flight neutron spectrometer at JET

The velocity-space sensitivities of fast-ion diagnostics are often described by so-called weight functions. Recently, we formulated weight functions showing the velocity-space sensitivity of the often dominant beam-target part of neutron energy spectra. These weight functions for neutron emission spectrometry (NES) are independent of the particular NES diagnostic. Here we apply these NES weight functions to the time-of-flight spectrometer TOFOR at JET. By taking the instrumental response function of TOFOR into account, we calculate time-of-flight NES weight functions that enable us to directly determine the velocity-space sensitivity of a given part of a measured time-of-flight spectrum from TOFOR

Relationship of edge localized mode burst times with divertor flux loop signal phase in JET

A phase relationship is identified between sequential edge localized modes (ELMs) occurrence times in a set of H-mode tokamak plasmas to the voltage measured in full flux azimuthal loops in the divertor region. We focus on plasmas in the Joint European Torus where a steady H-mode is sustained over several seconds, during which ELMs are observed in the Be II emission at the divertor. The ELMs analysed arise from intrinsic ELMing, in that there is no deliberate intent to control the ELMing process by external means. We use ELM timings derived from the Be II signal to perform direct time domain analysis of the full flux loop VLD2 and VLD3 signals, which provide a high cadence global measurement proportional to the voltage induced by changes in poloidal magnetic flux. Specifically, we examine how the time interval between pairs of successive ELMs is linked to the time-evolving phase of the full flux loop signals. Each ELM produces a clear early pulse in the full flux loop signals, whose peak time is used to condition our analysis. The arrival time of the following ELM, relative to this pulse, is found to fall into one of two categories: (i) prompt ELMs, which are directly paced by the initial response seen in the flux loop signals; and (ii) all other ELMs, which occur after the initial response of the full flux loop signals has decayed in amplitude. The times at which ELMs in category (ii) occur, relative to the first ELM of the pair, are clustered at times when the instantaneous phase of the full flux loop signal is close to its value at the time of the first ELM