Stability and Startup of Non Linear Loop Circuits

The reliable analysis of DC operating point in circuits with positive feedback topology is often challenging, and frequently performed with ad hoc methods. These techniques are often error prone and lead to the frequent use of sub-optimal or unnecessary additional circuits for the stabilization or determination of the operating point (startup circuits). We present a simple and reliable technique for the determination of “stable” circuit solutions, that is based on the use of available circuit simulators and hence takes advantage of accurate device models. The method has been experimentally validated on a self-biasing current generator fabricated with a standard 0.18 μm CMOS process

Architectures for a quantum random access memory

A random access memory, or RAM, is a device that, when interrogated, returns the content of a memory location in a memory array. A quantum RAM, or qRAM, allows one to access superpositions of memory sites, which may contain either quantum or classical information. RAMs and qRAMs with n-bit addresses can access 2^n memory sites. Any design for a RAM or qRAM then requires O(2^n) two-bit logic gates. At first sight this requirement might seem to make large scale quantum versions of such devices impractical, due to the difficulty of constructing and operating coherent devices with large numbers of quantum logic gates. Here we analyze two different RAM architectures (the conventional fanout and the "bucket brigade") and propose some proof-of-principle implementations which show that in principle only O(n) two-qubit physical interactions need take place during each qRAM call. That is, although a qRAM needs O(2^n) quantum logic gates, only O(n) need to be activated during a memory call. The resulting decrease in resources could give rise to the construction of large qRAMs that could operate without the need for extensive quantum error correction.Comment: 10 pages, 7 figures. Updated version includes the answers to the Refere

Lagrange formalism of memory circuit elements: classical and quantum formulations

The general Lagrange-Euler formalism for the three memory circuit elements, namely, memristive, memcapacitive, and meminductive systems, is introduced. In addition, {\it mutual meminductance}, i.e. mutual inductance with a state depending on the past evolution of the system, is defined. The Lagrange-Euler formalism for a general circuit network, the related work-energy theorem, and the generalized Joule's first law are also obtained. Examples of this formalism applied to specific circuits are provided, and the corresponding Hamiltonian and its quantization for the case of non-dissipative elements are discussed. The notion of {\it memory quanta}, the quantum excitations of the memory degrees of freedom, is presented. Specific examples are used to show that the coupling between these quanta and the well-known charge quanta can lead to a splitting of degenerate levels and to other experimentally observable quantum effects

On the robustness of bucket brigade quantum RAM

We study the robustness of the bucket brigade quantum random access memory model introduced by Giovannetti, Lloyd, and Maccone [Phys. Rev. Lett. 100, 160501 (2008)]. Due to a result of Regev and Schiff [ICALP '08 pp. 773], we show that for a class of error models the error rate per gate in the bucket brigade quantum memory has to be of order $o(2^{-n/2})$ (where $N=2^n$ is the size of the memory) whenever the memory is used as an oracle for the quantum searching problem. We conjecture that this is the case for any realistic error model that will be encountered in practice, and that for algorithms with super-polynomially many oracle queries the error rate must be super-polynomially small, which further motivates the need for quantum error correction. By contrast, for algorithms such as matrix inversion [Phys. Rev. Lett. 103, 150502 (2009)] or quantum machine learning [Phys. Rev. Lett. 113, 130503 (2014)] that only require a polynomial number of queries, the error rate only needs to be polynomially small and quantum error correction may not be required. We introduce a circuit model for the quantum bucket brigade architecture and argue that quantum error correction for the circuit causes the quantum bucket brigade architecture to lose its primary advantage of a small number of "active" gates, since all components have to be actively error corrected.Comment: Replaced with the published version. 13 pages, 9 figure

On the Fairlie's Moyal formulation of M(atrix)- theory

Starting from the Moyal formulation of M-theory in the large N-limit, we propose to reexamine the associated membrane equations of motion in 10 dimensions formulated in terms of Poisson bracket. Among the results obtained, we rewrite the coupled first order Nahm's equations into a simple form leading in turn to their systematic relation with $SU(\infty)$ Yang Mills equations of motion. The former are interpreted as the vanishing condition of some conserved currents which we propose. We develop also an algebraic analysis in which an ansatz is considered and find an explicit form for the membrane solution of our problem. Typical solutions known in literature can also emerge as special cases of the proposed solutionComment: 16 page

Modelling amorphous computations with transcription networks

The power of electronic computation is due in part to the development of modular gate structures that can be coupled to carry out sophisticated logical operations and whose performance can be readily modelled. However, the equivalences between electronic and biochemical operations are far from obvious. In order to help cross between these disciplines, we develop an analogy between complementary metal oxide semiconductor and transcriptional logic gates. We surmise that these transcriptional logic gates might prove to be useful in amorphous computations and model the abilities of immobilized gates to form patterns. Finally, to begin to implement these computations, we design unique hairpin transcriptional gates and then characterize these gates in a binary latch similar to that already demonstrated by Kim et al. (Kim, White & Winfree 2006 Mol. Syst. Biol. 2, 68 (doi:10.1038/msb4100099)). The hairpin transcriptional gates are uniquely suited to the design of a complementary NAND gate that can serve as an underlying basis of molecular computing that can output matter rather than electronic information

Nanofilters for Optical Nanocircuits

We theoretically and numerically study the design of optical 'lumped' nanofiltering devices in the framework of our recently proposed paradigm for optical nanocircuits. In particular, we present the design of basic filtering elements, such as low-pass, band-pass, stop-band and high-pass 'lumped' nanofilters, for use in optical nanocircuits together with more complex designs, such as multi-zero or multi-pole nanofilters, to work at THz, infrared and optical frequencies. Following the nanocircuit theory, we show how it is possible to design such complex frequency responses by simple rules, similar to RF circuit design, and we compare the frequency response of these optical nanofilters with classic filters in RF circuits. These results may provide a theoretical foundation for fabricating nanofilters in optical lumped nanocircuit devices.Comment: 34 pages, 14 figure

Mega-exposição dos Açores em S. Paulo, Brasil

Na qualidade de Diretora Regional das Comunidades, fomos responsável pela redação dos artigos e coordenação da página "Comunidades", integrada no jornal Açoriano Oriental, servindo a mesma para a divulgação das atividades realizadas pela Direção Regional Das Comunidades do Governo dos Açores.Se existe manifestação religiosa que possa caracterizar o povo açoriano, nas ilhas e sua diáspora, o culto ao Divino Espírito Santo, é, sem dúvida, o que reúne a primazia. Consciente de que as Festas ao Divino são fator de união entre todos os açorianos pelo mundo e motivo de interesse e estudo por parte de académicos, a DRC encontra-se a organizar o V Congresso Internacional do Culto do Divino Espírito Santo, que se vai realizar, em Maio, na Terceira. Contamos com a presença de largas dezenas de açorianos e açordescendentes que representarão as nossas comunidades. [...]

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides.

We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity ∼8 × 1010 cm-2 at the charge neutrality point, and a large Seebeck coefficient ∼140 μV K-1, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices