Transparent conductive oxide TCO buffer layer effect on the resistive switching process in metal TCO TiO2 metal assemblies

The effect of transparent conductive oxide TCO buffer layer on the insulator matrix and on the resistive switching process in the metal TiO2 TCO metal assembly was studied depending on the material of TCO ITO In2O3 0.9 SnO2 0.1 or SnO2 or ZnO . First time electro physical studies and near edge x ray absorption fine structure NEXAFS studies were carried out jointly and in the same point of the sample providing the direct experimental evidence that switching process influences strongly the lowest unoccupied bands and local atomic structure of the TiO2 layers. It was established that TCO layer in metal TiO2 TCO metal assembly is an additional source of oxygen vacancies for TiO2 film. The RL RH states are achieved presumably with formation rupture of electrically conductive path of oxygen vacancies. The inserting the Al2O3 thin layer between TiO2 and TCO layers restricts to some extent processes of migration of oxygen ions and vacancies and does not permit to realize the anti clockwise bipolar resistive switching in Au TiO2 Al2O3 ITO Au assembly. The greatest value of the ratio RH RL is observed for assembly with SnO2 buffer layer that will provide to implement the maximum set of intermediate states recording analog data and increases the density of information recording in this cas

Risk profiles and one-year outcomes of patients with newly diagnosed atrial fibrillation in India: Insights from the GARFIELD-AF Registry.

BACKGROUND: The Global Anticoagulant Registry in the FIELD-Atrial Fibrillation (GARFIELD-AF) is an ongoing prospective noninterventional registry, which is providing important information on the baseline characteristics, treatment patterns, and 1-year outcomes in patients with newly diagnosed non-valvular atrial fibrillation (NVAF). This report describes data from Indian patients recruited in this registry. METHODS AND RESULTS: A total of 52,014 patients with newly diagnosed AF were enrolled globally; of these, 1388 patients were recruited from 26 sites within India (2012-2016). In India, the mean age was 65.8 years at diagnosis of NVAF. Hypertension was the most prevalent risk factor for AF, present in 68.5% of patients from India and in 76.3% of patients globally (P < 0.001). Diabetes and coronary artery disease (CAD) were prevalent in 36.2% and 28.1% of patients as compared with global prevalence of 22.2% and 21.6%, respectively (P < 0.001 for both). Antiplatelet therapy was the most common antithrombotic treatment in India. With increasing stroke risk, however, patients were more likely to receive oral anticoagulant therapy [mainly vitamin K antagonist (VKA)], but average international normalized ratio (INR) was lower among Indian patients [median INR value 1.6 (interquartile range {IQR}: 1.3-2.3) versus 2.3 (IQR 1.8-2.8) (P < 0.001)]. Compared with other countries, patients from India had markedly higher rates of all-cause mortality [7.68 per 100 person-years (95% confidence interval 6.32-9.35) vs 4.34 (4.16-4.53), P < 0.0001], while rates of stroke/systemic embolism and major bleeding were lower after 1 year of follow-up. CONCLUSION: Compared to previously published registries from India, the GARFIELD-AF registry describes clinical profiles and outcomes in Indian patients with AF of a different etiology. The registry data show that compared to the rest of the world, Indian AF patients are younger in age and have more diabetes and CAD. Patients with a higher stroke risk are more likely to receive anticoagulation therapy with VKA but are underdosed compared with the global average in the GARFIELD-AF. CLINICAL TRIAL REGISTRATION-URL: http://www.clinicaltrials.gov. Unique identifier: NCT01090362

Effect of thermal annealing and Al2O3 interlayer on intermixing in the TiN SiO2 Si structure

The effect of post deposition annealing and Al2O3interlayer introduced between the film and substrate onthe nitrogen content in TiN films in TiN SiO2 Si structures were studied using near edge X ray absorptionfine structure NEXAFS spectroscopy. It was established that i the structure of the studied films corre sponds to TiN1 amp; 8722;xOx; ii annealing the system insignificantly decreases the concentration of the oxygenin the film; iii an Al2O3interlayer prevents diffusion of oxygen from SiO2and supports high nitrogencontent in the TiN fil