318 research outputs found

    Unconventional Hall effect in oriented Ca3_3Co4_4O9_9 thin films

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    Transport properties of the good thermoelectric misfit oxide Ca3_3Co4_4O9_9 are examined. In-plane resistivity and Hall resistance measurements were made on epitaxial thin films which were grown on {\it c}-cut sapphire substrates using the pulsed laser deposition technique. Interpretation of the in-plane transport experiments relates the substrate-induced strain in the resulting film to single crystals under very high pressure (∼\sim 5.5 GPa) consistent with a key role of strong electronic correlation. They are confirmed by the measured high temperature maxima in both resistivity and Hall resistance. While hole-like charge carriers are inferred from the Hall effect measurements over the whole investigated temperature range, the Hall resistance reveals a non monotonic behavior at low temperatures that could be interpreted with an anomalous contribution. The resulting unconventional temperature dependence of the Hall resistance seems thus to combine high temperature strongly correlated features above 340 K and anomalous Hall effect at low temperature, below 100 K.Comment: Submitted to Physical Review B (2005

    Solar reforming of biomass with homogeneous carbon dots

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    A sunlight-powered process is reported that employs carbon dots (CDs) as light absorber for the conversion of lignocellulose into sustainable H2 fuel and organics. This photocatalytic system operates in pure and untreated sea water using a benign pH (2-8) at ambient temperature and pressure. The CDs can be produced in a scalable synthesis directly from biomass itself and their solubility allows for good interactions with the insoluble biomass substrates. They also display excellent photophysical properties with a high fraction of long-lived charge carriers and the availability of a reductive and an oxidative quenching pathway. The presented CD-based biomass photoconversion system opens new avenues for sustainable, practical, and renewable fuel production through biomass valorization

    Dark Photocatalysis: Storage of Solar Energy in Carbon Nitride for Time-Delayed Hydrogen Generation

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    While natural photosynthesis serves as the model system for efficient charge separation and decoupling of redox reactions, bio-inspired artificial systems typically lack applicability owing to synthetic challenges and structural complexity. We present herein a simple and inexpensive system that, under solar irradiation, forms highly reductive radicals in the presence of an electron donor, with lifetimes exceeding the diurnal cycle. This radical species is formed within a cyanamide-functionalized polymeric network of heptazine units and can give off its trapped electrons in the dark to yield H2_{2} , triggered by a co-catalyst, thus enabling the temporal decoupling of the light and dark reactions of photocatalytic hydrogen production through the radical's longevity. The system introduced here thus demonstrates a new approach for storing sunlight as long-lived radicals, and provides the structural basis for designing photocatalysts with long-lived photo-induced states.This work was supported by the Deutsche Forschungsgemeinschaft (project LO1801/1-1) and an ERC Starting Grant (B.V.L., grant number 639233), the Max Planck Society, the cluster of excellence Nanosystems Initiative Munich (NIM), and the Center for Nanoscience (CeNS). We acknowledge support by the Christian Doppler Research Association (Austrian Federal Ministry of Science, Research and Economy, National Foundation for Research, Technology and Development) and the OMV Group (H.K., E.R.). V.W.-h.L. gratefully acknowledges a postdoctoral scholarship from the Max Planck Society

    Sino-nasal aspergillosis in a dog

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    Electrical conduction properties of Si δ-doped GaAs grown by MBE

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    The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures. © 2009 Elsevier B.V. All rights reserved
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