Piecewise Linear and Nonlinear Window Functions for Modelling of Nanostructured Memristor Device

The present paper reports two new window functions viz. piecewise linear window function and nonlinear window function for modelling of the nanostructured memristor device. The piecewise linear window function can be used for modelling of symmetric pinched hysteresis loop in I-V plane (for digital memory applications) and the nonlinear window function can be used for modelling of nonlinear pinched hysteresis loop in I-V plane (for analog memory applications). Flexibility in the parameter selection is the main attractive feature of these window functions

Piecewise Linear and Nonlinear Window Functions for Modelling of Nanostructured Memristor Device

The present paper reports two new window functions viz. piecewise linear window function and nonlinear window function for modelling of the nanostructured memristor device. The piecewise linear window function can be used for modelling of symmetric pinched hysteresis loop in I-V plane (for digital memory applications) and the nonlinear window function can be used for modelling of nonlinear pinched hysteresis loop in I-V plane (for analog memory applications). Flexibility in the parameter selection is the main attractive feature of these window functions

Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM

Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM

Case study for contact pressure improvisation with graded implant material in articular cartilages of knee joint

In this study, the effect of graded design in comparison to homogeneous cartilage material is investigated for contact pressure distribution in the human knee joint. Knee implants are assumed a homogeneous material. In reality, cartilages are not homogeneous, and to replicate the heterogeneity of cartilages, a graded design is proposed. Simulation results show improved contact pressure distribution in the knee joint due to the graded composition of cartilages. The results are helpful in designing a new class of implant materials