Temperature dependence of current-voltage characteristics of Al/rubrene/n-GaAs (100) Schottky barrier diodes

International Semiconductor Science and Technology Conference (ISSTC) -- MAY 11-13, 2015 -- Kusadasi, TURKEYTUGLUOGLU, NIHAT/0000-0001-9428-4347WOS: 0003730692000075,6,11,12-tetraphenylnaphthacene (rubrene) is fabricated by spin coating technique on n type GaAs (100) substrate. The current-voltage (I-V) characteristics of Al/rubrene/n-GaAs (100) Schottky diode have been measured in the temperature range of 100-300 K. The experimental values of saturation current (I-0), ideality factor (n) and barrier height (Phi(B)) are calculated as 2.749 pA, 6.051 and 0.297 eV at 100 K and 57.54 pA, 1.918 and 0.870 eV at 300 K, respectively. The values of series resistance (R-S) are calculated using Cheung functions at all temperatures. The R-S values are found as 1276.4 Omega and 119.7 Omega for 100 K and 300 K, respectively. It is found that barrier heights increased while ideality factors and series resistances decrease with the increasing temperature. (C) 2015 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of Conference Committee Members of International Semiconductor Science and Technology Conference 2015 (ISSTC 2015).Kavasoglu Pazarlama Ticaret Ltd Sti, Kontek Muhendislik Otomasyon Danismanlik San Tic Ltd Sti, Tekno Tip Analitik Sistemler Ltd Sti, Yildirim Elektronik, Gediz Univ Teknoloji Transfer Ofisi, Haml