Electron transport through a metal-molecule-metal junction

Molecules of bisthiolterthiophene have been adsorbed on the two facing gold electrodes of a mechanically controllable break junction in order to form metal-molecule(s)-metal junctions. Current-voltage (I-V) characteristics have been recorded at room temperature. Zero bias conductances were measured in the 10-100 nS range and different kinds of non-linear I-V curves with step-like features were reproducibly obtained. Switching between different kinds of I-V curves could be induced by varying the distance between the two metallic electrodes. The experimental results are discussed within the framework of tunneling transport models explicitly taking into account the discrete nature of the electronic spectrum of the molecule.Comment: 12 pages, 12 figures to appear in Phys. Rev. B 59(19) 199

Scaling Law in Carbon Nanotube Electromechanical Devices

We report a method for probing electromechanical properties of multiwalled carbon nanotubes(CNTs). This method is based on AFM measurements on a doubly clamped suspended CNT electrostatically deflected by a gate electrode. We measure the maximum deflection as a function of the applied gate voltage. Data from different CNTs scale into an universal curve within the experimental accuracy, in agreement with a continuum model prediction. This method and the general validity of the scaling law constitute a very useful tool for designing actuators and in general conducting nanowire-based NEMS.Comment: 12 pages, 4 figures. To be published in Phys. Rev. Let

Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi level pinning at the molecule-metal interface

We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices and we examine to what extent the nature of the pi end-group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. For all the pi-groups investigated here, we observe rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (S. Lenfant et al., Nano Letters 3, 741 (2003)).The experimental current-voltage curves are analyzed with a simple analytical model, from which we extract the energy position of the molecular orbital of the pi-group in resonance with the Fermi energy of the electrodes. We report the experimental studies of the band lineup in these silicon/alkyl-pi conjugated molecule/metal junctions. We conclude that Fermi level pinning at the pi-group/metal interface is mainly responsible for the observed absence of dependence of the rectification effect on the nature of the pi-groups, even though they were chosen to have significant variations in their electronic molecular orbitalsComment: To be published in J. Phys. Chem.

Markov property of Lagrangian turbulence

Based on direct numerical simulations with point-like inertial particles transported by homogeneous and isotropic turbulent flows, we present evidence for the existence of Markov property in Lagrangian turbulence. We show that the Markov property is valid for a finite step size larger than a Stokes number-dependent Einstein-Markov memory length. This enables the description of multi-scale statistics of Lagrangian particles by Fokker-Planck equations, which can be embedded in an interdisciplinary approach linking the statistical description of turbulence with fluctuation theorems of non-equilibrium stochastic thermodynamics and fluctuation theorems, and local flow structures.Comment: submitted to PRL, 5 pages, 4 figure

Entanglement over global distances via quantum repeaters with satellite links

We study entanglement creation over global distances based on a quantum repeater architecture that uses low-earth orbit satellites equipped with entangled photon sources, as well as ground stations equipped with quantum non-demolition detectors and quantum memories. We show that this approach allows entanglement creation at viable rates over distances that are inaccessible via direct transmission through optical fibers or even from very distant satellites.Comment: 5+3 pages, 3+2 figure

Studying Free-Space Transmission Statistics and Improving Free-Space QKD in the Turbulent Atmosphere

The statistical fluctuations in free-space links in the turbulent atmosphere are important for the distribution of quantum signals. To that end, we first study statistics generated by the turbulent atmosphere in an entanglement based free-space quantum key distribution (QKD) system. Using the insights gained from this analysis, we study the effect of link fluctuations on the security and key generation rate of decoy state QKD concluding that it has minimal effect in the typical operating regimes. We then investigate the novel idea of using these turbulent fluctuations to our advantage in QKD experiments. We implement a signal-to-noise ratio filter (SNRF) in our QKD system which rejects measurements during periods of low transmission efficiency, where the measured quantum bit error rate (QBER) is temporarily elevated. Using this, we increase the total secret key generated by the system from 78,009 bits to 97,678 bits, representing an increase of 25.2% in the final secure key rate, generated from the same raw signals. Lastly, we present simulations of a QKD exchange with an orbiting LEO satellite and show that an SNRF will be extremely useful in such a situation, allowing many more passes to extract a secret key than would otherwise be possible.Comment: 9 pages, 6 figure

Probing quantum and classical turbulence analogy through global bifurcations in a von K\'arm\'an liquid Helium experiment

We report measurements of the dissipation in the Superfluid Helium high REynold number von Karman flow (SHREK) experiment for different forcing conditions, through a regime of global hysteretic bifurcation. Our macroscopical measurements indicate no noticeable difference between the classical fluid and the superfluid regimes, thereby providing evidence of the same dissipative anomaly and response to asymmetry in fluid and superfluid regime. %In the latter case, A detailed study of the variations of the hysteretic cycle with Reynolds number supports the idea that (i) the stability of the bifurcated states of classical turbulence in this closed flow is partly governed by the dissipative scales and (ii) the normal and the superfluid component at these temperatures (1.6K) are locked down to the dissipative length scale.Comment: 5 pages, 5 figure

Interfacial charge transfer in nanoscale polymer transistors

Interfacial charge transfer plays an essential role in establishing the relative alignment of the metal Fermi level and the energy bands of organic semiconductors. While the details remain elusive in many systems, this charge transfer has been inferred in a number of photoemission experiments. We present electronic transport measurements in very short channel ($L < 100$ nm) transistors made from poly(3-hexylthiophene) (P3HT). As channel length is reduced, the evolution of the contact resistance and the zero-gate-voltage conductance are consistent with such charge transfer. Short channel conduction in devices with Pt contacts is greatly enhanced compared to analogous devices with Au contacts, consistent with charge transfer expectations. Alternating current scanning tunneling microscopy (ACSTM) provides further evidence that holes are transferred from Pt into P3HT, while much less charge transfer takes place at the Au/P3HT interface.Comment: 19 preprint pages, 6 figure