The Influence of Locust Bean Gum on the Strength Characteristics of Handsheets Under Varying pH Conditions. A study of the Effect of Alum or Hydrogen Ion Concentration

A literature survey concerning the addition of locust bean gum to beaten pulp and the resulting strength characteristics imparted to handsheets through the addition of the gum has been undertaken. Although much literature can be found, hardly any detailed information can be extracted on the effect of alum or hydrogen ion concentration. Therefore, the aim of this paper is to draw some conclusion, through laboratory work, as to any possible change, due to pH or alum, in the strength characteristics of handsheets containing locust bean gum. The first part of this thesis will be a brief review of work that has already been carried out concerning the use of locust bean gum in paper-making, while parts two and three will show the planning of experiments and results of the laboratory work

The use of digital microfluidics for a silicon photonic sensors platform

status: publishe

High voltage implanted RESURF p-LDMOS using BICMOS technology

The hgh voltage DMOST based on BICMOS technology[l] are becoming more attractive because of its easy integration with bipolar and CMOS devices. Its process is required to be as compatible as possible with the BICMOS technology. This paper presents a complementary RESURF[2] p-LDMOS in whch the ni buried layer is used for the first time, as an effective substrate and the field implant is introduced to modify the drift charges. The implant conditions in t h ~ csa se, particularly the placements, will be studied

AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction

For the first time, AC lifetime in Si-cap/Ge and GeO2/Ge pMOSFETs is investigated and it must not be predicted by the conventional DC stress method with a measurement delay. This is because the energy alternating defects are generated in Ge devices but not in Si, which introduces additional generation under DC stress

The Tumor Suppressor LKB1 Kinase Directly Activates AMP-Activated Kinase and Regulates Apoptosis in Response to Energy Stress

AMP-activated protein kinase (AMPK) is a highly conserved sensor of cellular energy status found in all eukaryotic cells. AMPK is activated by stimuli that increase the cellular AMP/ATP ratio. Essential to activation of AMPK is its phosphorylation at Thr-172 by an upstream kinase, AMPKK, whose identity in mammalian cells has remained elusive. Here we present biochemical and genetic evidence indicating that the LKB1 serine/threonine kinase, the gene inactivated in the Peutz-Jeghers familial cancer syndrome, is the dominant regulator of AMPK activation in several mammalian cell types. We show that LKB1 directly phosphorylates Thr-172 of AMPKalpha in vitro and activates its kinase activity. LKB1-deficient murine embryonic fibroblasts show nearly complete loss of Thr-172 phosphorylation and downstream AMPK signaling in response to a variety of stimuli that activate AMPK. Reintroduction of WT, but not kinase-dead, LKB1 into these cells restores AMPK activity. Furthermore, we show that LKB1 plays a biologically significant role in this pathway, because LKB1-deficient cells are hypersensitive to apoptosis induced by energy stress. On the basis of these results, we propose a model to explain the apparent paradox that LKB1 is a tumor suppressor, yet cells lacking LKB1 are resistant to cell transformation by conventional oncogenes and are sensitive to killing in response to agents that elevate AMP. The role of LKB1/AMPK in the survival of a subset of genetically defined tumor cells may provide opportunities for cancer therapeutics