15 research outputs found
Enhanced electron correlations at the SrxCa1-xVO3 surface
We report hard x-ray photoemission spectroscopy measurements of the
electronic structure of the prototypical correlated oxide SrxCa1-xVO3. By
comparing spectra recorded at different excitation energies, we show that 2.2
keV photoelectrons contain a substantial surface component, whereas 4.2 keV
photoelectrons originate essentially from the bulk of the sample.
Bulk-sensitive measurements of the O 2p valence band are found to be in good
agreement with ab initio calculations of the electronic structure, with some
modest adjustments to the orbital-dependent photoionization cross sections. The
evolution of the O 2p electronic structure as a function of the Sr content is
dominated by A-site hybridization. Near the Fermi level, the correlated V 3d
Hubbard bands are found to evolve in both binding energy and spectral weight as
a function of distance from the vacuum interface, revealing higher correlation
at the surface than in the bulk
Abrupt GaP/Si hetero-interface using bistepped Si buffer
We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth
Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications
San Francisco, California, United StatesInternational audienceLattice-matched GaP-based nanostructures grown on silicon substrates is a highly rewarded route for coherent integration of photonics and high-efficiency photovoltaic devices onto silicon substrates. We report on the structural and optical properties of selected MBE-grown nanostructures on both GaP substrates and GaP/Si pseudo-substrates. As a first stumbling block, the GaP/Si interface growth has been optimised thanks to a complementary set of thorough structural analyses. Photoluminescence and time-resolved photoluminescence studies of self-assembled (In,Ga)As quantum dots grown on GaP substrate demonstrate a proximity of two different types of optical transitions interpreted as a competition between conduction band states in X and Î valleys. Structural properties and optical studies of GaAsP(N)/GaP(N) quantum wells coherently grown on GaP substrates and GaP/Si pseudo substrates are reported. Our results are found to be suitable for light emission applications in the datacom segment. Then, possible routes are drawn for larger wavelengths applications, in order to address the chip-to-chip and within-a-chip optical interconnects and the optical telecom segments. Finally, results on GaAsPN/GaP heterostructures and diodes, suitable for PV applications are reporte
Simultaneous spectroscopic, diffraction and microscopic study of the metal-insulator transition of VO<sub>2</sub>
ABSTRACTWe present a simultaneous photoemission spectroscopic, low-energy electron diffraction and low-energy electron microscopic study of the metal-insulator transition of strained VO2. The fraction of rutile structure is extracted from the microscopic measurements throughout the transition, and compared with the fraction of the metallic electrons from photoemission data. We find that at intermediate temperatures, while the system is predominantly monoclinic-like in structure, the electronic component of the transition is much further advanced. Our results provide direct evidence for a monoclinic-like metallic phase of VO2 that is easily accessible at ambient temperatures and pressures.</jats:p
UHVCVD-MBE growth for tandem solar cells
International audienc
UHVCVD-MBE growth cluster for III-N-V/Si solar cells
International audienc