112 research outputs found

    Clean-Room lithographical processes for the fabrication of Graphene biosensors

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    This work is on developing clean-room processes for the fabrication of electrolyte-gate graphene field-effect transistors at the wafer scale for biosensing applications. Our fabrication process overcomes two main issues: removing surface residues after graphene patterning and the dielectric passivation of metallic contacts. A graphene residue-free transfer process is achieved by using a pre-transfer, sacrificial metallic mask that protects the entire wafer except the areas around the channel, source, and drain, onto which the graphene film is transferred and later patterned. After the dissolution of the mask, clean gate electrodes are obtained. The multilayer SiO2/SiNx dielectric passivation takes advantage of the excellent adhesion of SiO2 to graphene and the substrate materials and the superior impermeability of SiNx. It hinders native nucleation centers and breaks the propagation of defects through the layers, protecting from prolonged exposition to all common solvents found in biochemistry work, contrary to commonly used polymeric passivation. Since wet etch does not allow the required level of control over the lithographic process, a reactive ion etching process using a sacrificial metallic stopping layer is developed and used for patterning the passivation layer. The process achieves devices with high reproducibility at the wafer scale.Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding UIDB/04650/2020, UIDP/00013/2020, and Operational Program Competitiveness and Internationalization (POCI) under project POCI-01-0145-FEDER-031069 (PORTGRAPHE). This work was partially supported by E.U. Horizon 2020 Research and Innovation Programme, under project MULTIMAL (grant #777222). P.D. Cabral acknowledges the Ph.D. grant (SFRH/BD/128579/2017) from the FC

    Are Cu isotopes a useful tool to trace metal sources and processes in acid mine drainage (AMD) context?

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    In the South-West Europe (Iberian Pyrite Belt), acid mine drainage (AMD) processes are especially problematic because they affect the environmental quality of watersheds, restricting the use of surface water. Recent studies have shown that Cu isotopes are fractionated during the oxidative dissolution of primary sulfide minerals and could be used to trace metal cycling. However the chemistry of Cu in such environment is complex because Cu is redistributed within numerous secondary minerals and strongly dependent on the hydroclimatic conditions that control key parameters (pH, redox conditions). Finally, it remains difficult to compare the various field studies and deliver some strong general tendencies because of these changing conditions. For these reasons, concerted studies on Cu isotopes fractionation in waters impacted by AMD may help to reveal the sources and transport pathways of this important pollutant. To address this issue, we used a representative scenario of strong contamination by AMD in the Iberian Pyrite Belt (SW Spain), the Cobica River. The aim of our study is to measure the Cu isotopes signature in the waters (river, mine lake, water draining waste) of the small Cobica River system (Huelva, Spain), sampled during a short period (8 h) to avoid any change in the hydro-climatic conditions. This provided an instantaneous image of the isotopic Cu signature in a small mining systems and helped us to constrain both the processes affecting Cu isotopes and their use a potential tracer of metals in contaminated environments.This work was supported by the french national programme EC2CO Biohefect/Ecodyn//Dril/MicrobiEen (INSU/CNRS, France), the Paul Sabatier University (France) and the Department of Mining, Mechanical, Energetic and Construction Engineering of the University of Huelva (Spain)

    Building a Database of Plant Species for Bioengineering in the Mediterranean context

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    The building of database on mediterranean plants suited for soil and water bioengeneering interventions is presente

    Optical lithography patterning of SiO2 layers for interface passivation of thin film solar cells

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    Ultrathin Cu(In,Ga)Se2 solar cells are a promising way to reduce costs and to increase the electrical performance of thin film solar cells. In this work, we develop an optical lithography process that can produce sub-micrometer contacts in a SiO2 passivation layer at the CIGS rear contact. Furthermore, an optimization of the patterning dimensions reveals constrains over the features sizes. High passivation areas of the rear contact are needed to passivate the CIGS interface so that high performing solar cells can be obtained. However, these dimensions should not be achieved by using long distances between the contacts as they lead to poor electrical performance due to poor carrier extraction. This study expands the choice of passivation materials already known for ultrathin solar cells and its fabrication techniques.publishe

    A new phase in the production of quality-controlled sea level data

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    Sea level is an essential climate variable (ECV) that has a direct effect on many people through inundations of coastal areas, and it is also a clear indicator of climate changes due to external forcing factors and internal climate variability. Regional patterns of sea level change inform us on ocean circulation variations in response to natural climate modes such as El Niño and the Pacific Decadal Oscillation, and anthropogenic forcing. Comparing numerical climate models to a consistent set of observations enables us to assess the performance of these models and help us to understand and predict these phenomena, and thereby alleviate some of the environmental conditions associated with them. All such studies rely on the existence of long-term consistent high-accuracy datasets of sea level. The Climate Change Initiative (CCI) of the European Space Agency was established in 2010 to provide improved time series of some ECVs, including sea level, with the purpose of providing such data openly to all to enable the widest possible utilisation of such data. Now in its second phase, the Sea Level CCI project (SL_cci) merges data from nine different altimeter missions in a clear, consistent and well-documented manner, selecting the most appropriate satellite orbits and geophysical corrections in order to further reduce the error budget. This paper summarises the corrections required, the provenance of corrections and the evaluation of options that have been adopted for the recently released v2.0 dataset (https://doi.org/10.5270/esa-sea_level_cci-1993_2015-v_2.0-201612). This information enables scientists and other users to clearly understand which corrections have been applied and their effects on the sea level dataset. The overall result of these changes is that the rate of rise of global mean sea level (GMSL) still equates to ∼ 3.2 mm yr−1 during 1992–2015, but there is now greater confidence in this result as the errors associated with several of the corrections have been reduced. Compared with v1.1 of the SL_cci dataset, the new rate of change is 0.2 mm yr−1 less during 1993 to 2001 and 0.2 mm yr−1 higher during 2002 to 2014. Application of new correction models brought a reduction of altimeter crossover variances for most corrections

    Principales matières premières lithiques disponibles au Paléolithique entre le Bassin parisien et l'Auvergne: partie 2 - Loir-et-Cher, Indre-et-Loire. Le cas du Turonien inférieur et supérieur.

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    Dans le sud du Bass in parisien, les silex du Turonien inférieur - dits silex blonds - et supérieur - dits silex du Grand-Pressigny - constituent des ressources de première importance au Paléolithique supérieur. Leur exploitation préhistorique est reconnue dans tout le Berry, la Touraine, le Poitou et l'Auvergne. Ils se retrouvent également en petite quantité dans les séries lithiques du Paléolithique supérieur du Bassin parisien, de la vallée du Rhône, de l' Aquitaine et des Charentes. Ces ressources, malgré leur importance, n'avaient jusqu'alors pas fait l'objet d'une description pétrographique détaillée et ont été parfois confondues avec des silicifications cénozoïques localisées dans l'est et le sud du Massif central. Nous présentons une synthèse de nos observations sur plus de 700 échantillons issus de 104 gîtes différents et sur plusieurs milliers d'artefacts lithiques, étayée par une revue bibliographique des publications, cartes géologiques et mémoires universitaires ayant trait au sujet. En conclusion, rapport massif de silex du Turonien et notamment du Turonien inférieur comme élément structurant des assemblages lithiques du Paléolithique supérieur se cantonne pour l'essentiel dans un espace contraint au sud par le seuil du Poitou et les Combrailles creusoises au nord et à l'est par la Loire. Leur circulation sur plusieurs centaines de kilomètres n'est plus un rait anecdotique mais un élément structurant du fonctionnement des sociétés préhistoriques.info:eu-repo/semantics/publishedVersio

    On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells

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    Several optoelectronic issues, such as poor optical absorption and recombination limit the power conversion efficiency of ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. To mitigate recombination losses, two combined strategies were implemented: a Potassium Fluoride (KF) Post-Deposition Treatment (PDT) and a rear interface passivation strategy based on an Aluminium Oxide (Al2O3) point contact structure. The simultaneous implementation of both strategies is reported for the first time on ultrathin CIGS devices. Electrical measurements and 1-D simulations demonstrate that, in specific conditions, devices with only KF-PDT may outperform rear interface passivated based devices. By combining KF-PDT and rear interface passivation, an enhancement in open-circuit voltage of 178 mV is reached over devices that have a rear passivation only and of 85 mV over devices with only a KF-PDT process. Time-Resolved Photoluminescence measurements showed the beneficial effects of combining KF-PDT and the rear interface passivation at decreasing recombination losses in the studied devices, enhancing charge carrier lifetime. X-ray photoelectron spectroscopy measurements indicate the presence of a In and Se rich layer that we linked to be a KInSe2 layer. Our results suggest that when bulk and front interface recombination values are very high, they dominate and individual passivation strategies work poorly. Hence, this work shows that for ultrathin devices, passivation mitigation strategies need to be implemented in tandem.publishe

    On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells

    Get PDF
    Several optoelectronic issues, such as poor optical absorption and recombination limit the power conversion efficiency of ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. To mitigate recombination losses, two combined strategies were implemented: a Potassium Fluoride (KF) Post-Deposition Treatment (PDT) and a rear interface passivation strategy based on an Aluminium Oxide (Al2O3) point contact structure. The simultaneous implementation of both strategies is reported for the first time on ultrathin CIGS devices. Electrical measurements and 1-D simulations demonstrate that, in specific conditions, devices with only KF-PDT may outperform rear interface passivated based devices. By combining KF-PDT and rear interface passivation, an enhancement in open-circuit voltage of 178 mV is reached over devices that have a rear passivation only and of 85 mV over devices with only a KF-PDT process. Time-Resolved Photoluminescence measurements showed the beneficial effects of combining KF-PDT and the rear interface passivation at decreasing recombination losses in the studied devices, enhancing charge carrier lifetime. X-ray photoelectron spectroscopy measurements indicate the presence of a In and Se rich layer that we linked to be a KInSe2 layer. Our results suggest that when bulk and front interface recombination values are very high, they dominate and individual passivation strategies work poorly. Hence, this work shows that for ultrathin devices, passivation mitigation strategies need to be implemented in tandem.publishe
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