85 research outputs found
Impact of semiconducting electrodes on the electroresistance of ferroelectric tunnel junctions
Ferroelectric tunnel junctions are promising candidates for the realization of energy-efficient digital memories and analog memcomputing devices. In this work, we investigate the impact of a semiconducting layer in series to the junction on the sign of electroresistance. To this scope, we compare tunnel junctions fabricated out of Pt/BaTiO3/La1/3Sr2/3MnO3 (LSMO) and Pt/BaTiO3/Nb:SrTiO3 (Nb:STO) heterostructures, displaying an opposite sign of the electroresistance. By
capacitance-voltage profiling, we observe a behavior typical of Metal-Oxide-Semiconductor tunnel devices in both cases but compatible with the opposite sign of charge carriers in the semiconducting layer. While Nb:STO displays the expected n-type semiconducting character, metallic LSMO develops an interfacial p-type semiconducting layer. The different types of carriers at the semiconducting
interfaces and the modulation of the depleted region by the ferroelectric charge have
a deep impact on electroresistance, possibly accounting for the different sign observed in the two systems
Domain enhanced interlayer coupling in ferroelectric/paraelectric superlattices
We investigate the ferroelectric phase transition and domain formation in a
periodic superlattice consisting of alternate ferroelectric (FE) and
paraelectric (PE) layers of nanometric thickness. We find that the polarization
domains formed in the different FE layers can interact with each other via the
PE layers. By coupling the electrostatic equations with those obtained by
minimizing the Ginzburg-Landau functional we calculate the critical temperature
of transition Tc as a function of the FE/PE superlattice wavelength and
quantitatively explain the recent experimental observation of a thickness
dependence of the ferroelectric transition temperature in KTaO3/KNbO3
strained-layer superlattices.Comment: Latest version as was published in PR
Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film
We report the electrical characteristics of metal-ferroelectric-insulator-semiconductor structures, where the ferroelectric layer is a Langmuir-Blodgett film of a copolymer of 70% vinylidene fluoride and 30% trifluoroethylene. The 36-nm thick copolymer films were deposited on thermally oxidized (10 nm SiO2) p-type silicon and covered with a gold gate electrode. Polarization-field hysteresis loops indicate polarization switching in the polymer film. The device capacitance shows hysteresis when cycling the applied voltage between ±3 V, exhibiting a zero-bias on/off capacitance ratio of over 3:1 and a symmetric memory window 1 V wide, with little evidence of bias that can arise from traps in the oxide. Model calculations are in good agreement with the data and show that film polarization was not saturated. The capacitance hysteresis vanishes above the ferroelectric- paraelectric transition temperature, showing that it is due to polarization hysteresis. The retention time of both the on and off states was approximately 15 min at room temperature, possibly limited by leakage or by polarization instability in the unsaturated film. These devices provide a basis for nonvolatile data storage devices with fast nondestructive readout
The interface between silicon and a high-k oxide
The ability to follow Moore's Law has been the basis of the tremendous
success of the semiconductor industry in the past decades. To date, the
greatest challenge for device scaling is the required replacement of silicon
dioxide-based gate oxides by high-k oxides in transistors. Around 2010 high-k
oxides are required to have an atomically defined interface with silicon
without any interfacial SiO2 layer. The first clean interface between silicon
and a high-K oxide has been demonstrated by McKee et al. Nevertheless, the
interfacial structure is still under debate. Here we report on first-principles
calculations of the formation of the interface between silicon and SrTiO3 and
its atomic structure. Based on insights into how the chemical environment
affects the interface, a way to engineer seemingly intangible electrical
properties to meet technological requirements is outlined. The interface
structure and its chemistry provide guidance for the selection process of other
high-k gate oxides and for controlling their growth. Our study also shows that
atomic control of the interfacial structure can dramatically improve the
electronic properties of the interface. The interface presented here serves as
a model for a variety of other interfaces between high-k oxides and silicon.Comment: 10 pages, 2 figures (one color
On the verge of Umdeutung in Minnesota: Van Vleck and the correspondence principle (Part One)
In October 1924, the Physical Review, a relatively minor journal at the time,
published a remarkable two-part paper by John H. Van Vleck, working in virtual
isolation at the University of Minnesota. Van Vleck combined advanced
techniques of classical mechanics with Bohr's correspondence principle and
Einstein's quantum theory of radiation to find quantum analogues of classical
expressions for the emission, absorption, and dispersion of radiation. For
modern readers Van Vleck's paper is much easier to follow than the famous paper
by Kramers and Heisenberg on dispersion theory, which covers similar terrain
and is widely credited to have led directly to Heisenberg's "Umdeutung" paper.
This makes Van Vleck's paper extremely valuable for the reconstruction of the
genesis of matrix mechanics. It also makes it tempting to ask why Van Vleck did
not take the next step and develop matrix mechanics himself.Comment: 82 page
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