Comparison of seven prognostic tools to identify low-risk pulmonary embolism in patients aged <50 years

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Kinetic Monte Carlo simulation for semiconductor processing: A review

The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate the complex processing of semiconductor devices. In this review, some of the main processes used for semiconductor industries to manufacture transistor from semiconductor materials, namely implantation, annealing and epitaxial growth are reviewed. The evolution of defects created during such processing for the particular, and well known case, of silicon, is commented. Kinetic Monte Carlo modeling is introduced and contrasted briefly with a continuum approach. Particular models of different phenomena, using both object and lattice KMC, are shown: point defect migration, cluster formation, dopant activation and deactivation, damage accumulation, amorphization, recrystallization, solid phase and selective epitaxial regrowth, etc. In this work we describe the models, its implementation into KMC, and we show several comparisons with significant experimental data validating the KMC approach and showing its capabilities. How extra capabilities can be included by extending the models to current problems in the semiconductor industry is also commented, in particular the use of SiGe alloys and the introduction of stress dependencies

Retraction: “Atomistic simulation of damage accumulation and amorphization in Ge” [J. Appl. Phys. 117 , 055703 (2015)]

International audienc

Retraction: “Atomistic simulation of damage accumulation and amorphization in Ge” [J. Appl. Phys. 117 , 055703 (2015)]

International audienc

Atomistic simulation of damage accumulation and amorphization in Ge

cited By 2International audienceDamage accumulation and amorphization mechanisms by means of ion implantation in Ge are studied using Kinetic Monte Carlo and Binary Collision Approximation techniques. Such mechanisms are investigated through different stages of damage accumulation taking place in the implantation process: from point defect generation and cluster formation up to full amorphization of Ge layers. We propose a damage concentration amorphization threshold for Ge of ∼1.3×1022cm-3 which is independent on the implantation conditions. Recombination energy barriers depending on amorphous pocket sizes are provided. This leads to an explanation of the reported distinct behavior of the damage generated by different ions. We have also observed that the dissolution of clusters plays an important role for relatively high temperatures and fluences. The model is able to explain and predict different damage generation regimes, amount of generated damage, and extension of amorphous layers in Ge for different ions and implantation conditions