Minority Carrier Lifetime Properties of Reactive Ion Etched p-Type Float Zone Si

Quasi-steady-state photoconductance (QSSPC) and deep level transient spectroscopy (DLTS) were used to characterize the minority carrier lifetime properties of reactive ion etched p-type Si. The effective lifetime of the plasma-processed samples degraded after etching, with the densities of recombination centers increasing linearly with etch time. Evidence is provided for the long-range (> 2 μm) migration of defects in the plasma-etched samples. A discrete defect with energy position at (0.32 ± 0.02) eV, that could be either B- or H-related, was detected by DLTS in the etched samples. Furthermore, this energy level could be used to adequately model the injection-dependence of the measured carrier lifetimes using the Shockley-Read-Hall model. Our results show that DLTS and QSSPC is a powerful combination to characterize the electrical properties of defects that are relevant to the performance of solar cells

High-temperature contact formation on n-type silicon: Basic reactions and contact model for seed-layer contacts

Contact formation on n-type silicon, especially using a high-temperature process, has been the subject of research for more than 40 years. After its application in microelectronics, n-type silicon is widely used in silicon solar cells as the emitter layer. The formation of a low ohmic contact grid using an industrially feasible process step is one of the key features required to improve the solar-cell efficiency. The contact materials, typically deposited in a printing step, have to fulfil several functions: opening the dielectric antireflection layer and forming an intimate metal-semiconductor contact with good mechanical adhesion and low specific contact resistance. As the used contact inks typically contain several functional materials, such as silver and a glass frit, the detailed contact formation is still not entirely understood. Therefore, the chemical reactions during the contact firing process have been studied in detail by thermogravimetric differential thermal analysis in combination with mass spectroscopy. Based on these studies, a contact ink has been developed, optimized and tested on silicon solar cells. In this paper, the mechanism of the etching process, the opening of a dielectric layer, the influence of different atmospheres and the impact of the glass-frit content are investigated. The observed microscopic contact structure, the resulting electrical solar-cell parameters and the studied reactions are combined to clarify the physics behind the high-temperature contact formation

Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells

This chapter contains sections titled: Introduction Selective Emitter Solar Cells: Simulation Setup and Simulated Devices Selective Emitter Solar Cell: Impact of LD and HD Profiles Selective Emitter Solar Cell: Loss Mechanism Analysis Rear Point Contact Solar Cells: Introduction RPC Solar Cells: Simulation Methodology and Devices RPC Solar Cells: Comparison between PERL and PERC Solar Cells RPC Solar Cells: Back-Contact Diameter in PERL Cells Conclusion