7,289 research outputs found
Design sensitivity analysis and optimization of built-up structures
Developments during the course of the research in design sensitivity analysis and optimization of built-up structures, with both sizing and shape design variables, show clearly that a unified variational approach to design sensitivity analysis can yield derivatives of structural response with respect to design. Rigorous and practically computable results for structural components and built-up structures have been demonstrated and used to solve design optimization problems
Spin-transfer torque and spin-polarization in topological-insulator/ferromagnet vertical heterostructures
We predict an unconventional spin-transfer torque (STT) acting on the
magnetization of a free ferromagnetic (F) layer within N/TI/F vertical
heterostructures which originates from strong spin-orbit coupling (SOC) on the
surface of a three-dimensional topological insulator (TI), as well as from
charge current becoming spin-polarized in the direction of transport as it
flows from the normal metal (N) across the bulk of the TI slab. Unlike
conventional STT in symmetric F'/I/F magnetic tunnel junctions, where only the
in-plane STT component is non-zero in the linear response, both the in-plane
and perpendicular torque are sizable in N/TI/F junctions while not requiring
fixed F' layer as spin-polarizer which is advantageous for spintronic
applications. Using the nonequilibrium Born-Oppenheimer treatment of
interaction between fast conduction electrons and slow magnetization, we derive
a general Keldysh Green function-based STT formula which makes it possible to
analyze torque in the presence of SOC either in the bulk or at the interface of
the free F layer.Comment: 5 pages, 3 figures, PDFLaTe
Meservey-Tedrow-Fulde effect in a quantum dot embedded between metallic and superconducting electrodes
Magnetic field applied to the quantum dot coupled between one metallic and
one superconducting electrode can produce a similar effect as has been
experimentally observed by Meservey, Tedrow and Fulde [Phys. Rev. Lett. 25,
1270 (1970)] for the planar normal metal -- superconductor junctions. We
investigate the tunneling current and show that indeed the square root
singularities of differential conductance exhibit the Zeeman splitting near the
gap edge features V = +/- Delta/e. Since magnetic field affects also the in-gap
states of quantum dot it furthermore imposes a hyperfine structure on the
anomalous (subgap) Andreev current which has a crucial importance for a
signature of the Kondo resonance.Comment: 7 pages, 8 figure
Noise at a Fermi-edge singularity
We present noise measurements of self-assembled InAs quantum dots at high
magnetic fields. In comparison to I-V characteristics at zero magnetic field we
notice a strong current overshoot which is due to a Fermi-edge singularity. We
observe an enhanced suppression in the shot noise power simultaneous to the
current overshoot which is attributed to the electron-electron interaction in
the Fermi-edge singularity
Excitonic Dynamical Franz-Keldysh Effect
The Dynamical Franz-Keldysh Effect is exposed by exploring near-bandgap
absorption in the presence of intense THz electric fields. It bridges the gap
between the DC Franz- Keldysh effect and multi-photon absorption and competes
with the THz AC Stark Effect in shifting the energy of the excitonic resonance.
A theoretical model which includes the strong THz field non-perturbatively via
a non-equilibrium Green Functions technique is able to describe the Dynamical
Franz-Keldysh Effect in the presence of excitonic absorption.Comment: 4 pages in revtex with 5 figures included using epsf. Submitted to
Physical Review Letter
Giant anisotropy of Zeeman splitting of quantum confined acceptors in Si/Ge
Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are
characterized by resonant tunneling spectroscopy in the presence of high
magnetic fields. In a perpendicular magnetic field we observe a linear Zeeman
splitting of the acceptor levels. In an in-plane field, on the other hand, the
Zeeman splitting is strongly suppressed. This anisotropic Zeeman splitting is
shown to be a consequence of the huge light hole-heavy hole splitting caused by
a large biaxial strain and a strong quantum confinement in the Ge quantum well.Comment: 5 figures, 4 page
Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots
We have investigated the noise properties of the tunneling current through
vertically coupled self-assembled InAs quantum dots. We observe
super-Poissonian shot noise at low temperatures. For increased temperature this
effect is suppressed. The super-Poissonian noise is explained by capacitive
coupling between different stacks of quantum dots
Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters
We investigated the size dependence of the ground state energy in
self-assembled InAs quantum dots embedded in resonant tunneling diodes.
Individual current steps observed in the current-voltage characteristics are
attributed to resonant single-electron tunneling via the ground state of
individual InAs quantum dots. The onset voltage of the first step observed is
shown to decrease systematically from 200 mV to 0 with increasing InAs
coverage. We relate this to a coverage-dependent size of InAs dots grown on
AlAs. The results are confirmed by atomic force micrographs and
photoluminescence experiments on reference samples.Comment: 3 pages, 3 figure
High frequency conductivity in the quantum Hall effect
We present high frequency measurements of the diagonal conductivity sigma_xx
of a two dimensional electron system in the integer quantum Hall regime. The
width of the sigma_xx peaks between QHE minima is analyzed within the framework
of scaling theory using both temperature T=100-700 mK and frequency f <= 6 GHz
in a two parameter scaling ansatz. For the plateau transition width we find
scaling behaviour for both its temperature dependence as well as its frequency
dependence. However, the corresponding scaling exponent for temperature
kappa=0.42 significantly differs from the one deduced for frequency scaling
(c=0.6). Additionally we use the high frequency experiments to suppress the
contact resistances that strongly influences DC measurements. We find an
intrinsic critical conductivity sigma_c=0.17e^2/h, virtually independent of
temperature and filling factor, and deviating significantly from the proposed
universal value 0.5e^2/h.Comment: Proceedings of the '14th international conference on high magnetic
fields in semiconductor physics' (Semimag-2000) in Matsue, Japa
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