Using the Inelastic Background in Hard X-Ray Photoelectron Spectroscopy for a Depth-Resolved Analysis of the Cds / CU(In,GA)SE \u3c Inf \u3e 2 \u3c / Inf \u3e Interface

The inelastic background of hard x-ray photoelectron spectroscopy data is analyzed to paint a depth-resolved picture of the CdS/Cu(In,Ga)Se2 (CdS/CIGSe) layer structure. The CdS/CIGSe interface is the central component in next-generation chalcopyrite thin-film photovoltaic devices. By analyzing both, the (unscattered) core-level peaks and the inelastic background, and by varying the excitation photon energy from 2.1 up to 14 keV, we can derive photoemission information over a broad range of electron kinetic energies and, hence, sampling depths. With this complementary information, the CdS film thickness of a CdS/CIGSe interface can be accurately determined as a function of the CdS deposition time. For the thinner CdS films, the film thickness can be shown to vary laterally. Furthermore, small amounts of Se and process-related Rb can be detected in a thin (∼2 nm) surface layer of all investigated CdS films

Rubidium Fluoride Post-Deposition Treatment: Impact on the Chemical Structure of the Cu(In,Ga)Se2 Surface and CdS/Cu(In,Ga)Se2 Interface in Thin-Film Solar Cells.

We present a detailed characterization of the chemical structure of the Cu(In,Ga)Se2 thin-film surface and the CdS/Cu(In,Ga)Se2 interface, both with and without a RbF post-deposition treatment (RbF-PDT). For this purpose, X-ray photoelectron and Auger electron spectroscopy, as well as synchrotron-based soft X-ray emission spectroscopy have been employed. Although some similarities with the reported impacts of light-element alkali PDT (i.e., NaF- and KF-PDT) are found, we observe some distinct differences, which might be the reason for the further improved conversion efficiency with heavy-element alkali PDT. In particular, we find that the RbF-PDT reduces, but not fully removes, the copper content at the absorber surface and does not induce a significant change in the Ga/(Ga + In) ratio. Additionally, we observe an increased amount of indium and gallium oxides at the surface of the treated absorber. These oxides are partly (in the case of indium) and completely (in the case of gallium) removed from the CdS/Cu(In,Ga)Se2 interface by the chemical bath deposition of the CdS buffer

Resonant Raman scattering based approaches for the quantitative assessment of nanometric ZnMgO layers in high efficiency chalcogenide solar cells

This work reports a detailed resonant Raman scattering analysis of ZnMgO solid solution nanometric layers that are being developed for high efficiency chalcogenide solar cells. This includes layers with thicknesses below 100 nm and compositions corresponding to Zn/(Zn + Mg) content rations in the range between 0% and 30%. The vibrational characterization of the layers grown with different compositions and thicknesses has allowed deepening in the knowledge of the sensitivity of the different Raman spectral features on the characteristics of the layers, corroborating the viability of resonant Raman scattering based techniques for their non-destructive quantitative assessment. This has included a deeper analysis of different experimental approaches for the quantitative assessment of the layer thickness, based on (a) the analysis of the intensity of the ZnMgO main Raman peak; (b) the evaluation of the changes of the intensity of the main Raman peak from the subjacent layer located below the ZnMgO one; and (c) the study of the changes in the relative intensity of the first to second/third order ZnMgO peaks. In all these cases, the implications related to the presence of quantum confinement effects in the nanocrystalline layers grown with different thicknesses have been discussed and evaluated

UV‐selective optically transparent Zn(O,S)‐based solar cells

This work reports experimental evidence of a photovoltaic effect in transparent UV‐selective Zn(O,S)‐based heterojunctions. Zn(O,S) has a strong interest for the development of UV‐selective solar cells with high transparency in the visible region, required for the development of nonintrusive building‐integrated photovoltaic (BIPV) elements as transparent solar windows and glass‐based solar façades. By anion alloying, Zn(O,S) mixed crystal absorbers can be fabricated with different sulfur content across the whole compositional range. This allows adjustment of the bandgap of the absorbers in the 2.7-2.9 eV region, maximizing absorption in the UV, while keeping a high level of transparency. Zn(O,S) alloys with composition corresponding to S/(S + O) content ratios of 0.6 are successfully grown by sputtering deposition, and first glass/FTO/NiO/Zn(O,S)/ITO device prototypes are produced. The resulting devices present an average visible transmittance (AVT) of 75% and present photovoltaic effect. By introducing a thin C60 film as electron transport layer (ETL), charge extraction is enhanced, and devices show an efficiency of 0.5% and an AVT > 69%. The transparency of these devices can potentially allow for their ubiquitous installation in glazing systems as part of nonintrusive BIPV elements or to power Internet of Things (IoT) devices and sensors as an integrated transparent component