On the Origin of Metallicity and Stability of the Metastable Phase in Chemically Exfoliated MoS2_2

Chemical exfoliation of MoS$_2$ via Li-intercalation route has led to many desirable properties and spectacular applications due to the presence of a metastable state in addition to the stable H phase. However, the nature of the specific metastable phase formed, and its basic charge conduction properties have remained controversial. Using spatially resolved Raman spectroscopy (~1 micrometer resolution) and photoelectron spectroscopy (~120 nm resolution), we probe such chemically exfoliated MoS$_2$ samples in comparison to a mechanically exfoliated H phase sample and confirm that the dominant metastable state formed by this approach is a distorted T' state with a small semiconducting gap. Investigating two such samples with different extents of Li residues present, we establish that Li+ ions, not only help to exfoliate MoS$_2$ into few layer samples, but also contribute to enhancing the relative stability of the metastable state as well as dope the system with electrons, giving rise to a lightly doped small bandgap system with the T' structure, responsible for its spectacular properties.Comment: 34 pages, Main manuscript + Supplementary Materia

Chemical exfoliation of MoS2 leads to semiconducting 1T' phase and not the metallic 1T phase

A trigonal phase existing only as small patches on chemically exfoliated few layer, thermodynamically stable 1H phase of MoS2 is believed to influence critically properties of MoS2 based devices. This phase has been most often attributed to the metallic 1T phase. We investigate the electronic structure of chemically exfoliated MoS2 few layered systems using spatially resolved (lesser than 120 nm resolution) photoemission spectroscopy and Raman spectroscopy in conjunction with state-of-the-art electronic structure calculations. On the basis of these results, we establish that the ground state of this phase is a small gap (~90 meV) semiconductor in contrast to most claims in the literature; we also identify the specific trigonal (1T') structure it has among many suggested ones

Crystal Orientation Dependent Oxidation Modes at the Buried Graphene-Cu Interface.

We combine spatially resolved scanning photoelectron spectroscopy with confocal Raman and optical microscopy to reveal how the oxidation of the buried graphene-Cu interface relates to the Cu crystallographic orientation. We analyze over 100 different graphene covered Cu (high and low index) orientations exposed to air for 2 years. Four general oxidation modes are observed that can be mapped as regions onto the polar plot of Cu surface orientations. These modes are (1) complete, (2) irregular, (3) inhibited, and (4) enhanced wrinkle interface oxidation. We present a comprehensive characterization of these modes, consider the underlying mechanisms, compare air and water mediated oxidation, and discuss this in the context of the diverse prior literature in this area. This understanding incorporates effects from across the wide parameter space of 2D material interface engineering, relevant to key challenges in their emerging applications, ranging from scalable transfer to electronic contacts, encapsulation, and corrosion protection

Electrochemical activation of molecular nitrogen at the Ir/YSZ interface.

Nitrogen is often used as an inert background atmosphere in solid state studies of electrode and reaction kinetics, of solid state studies of transport phenomena, and in applications e.g. solid oxide fuel cells (SOFC), sensors and membranes. Thus, chemical and electrochemical reactions of oxides related to or with dinitrogen are not supposed and in general not considered. We demonstrate by a steady state electrochemical polarisation experiments complemented with in situphotoelectron spectroscopy (XPS) that at a temperature of 450 °C dinitrogen can be electrochemically activated at the three phase boundary between N2, a metal microelectrode and one of the most widely used solid oxide electrolytes—yttria stabilized zirconia (YSZ)—at potentials more negative than E = −1.25 V. The process is neither related to a reduction of the electrolyte nor to an adsorption process or a purely chemical reaction but is electrochemical in nature. Only at potentials more negative than E = −2 V did new components of Zr 3d and Y 3d signals with a lower formal charge appear, thus indicating electrochemical reduction of the electrolyte matrix. Theoretical model calculations suggest the presence of anionic intermediates with delocalized electrons at the electrode/electrolyte reaction interface. The ex situSIMS analysis confirmed that nitrogen is incorporated and migrates into the electrolyte beneath the electrode

From Growth Surface to Device Interface: Preserving Metallic Fe under Monolayer Hexagonal Boron Nitride

We investigate the interfacial chemistry between Fe catalyst foils and monolayer hexagonal boron nitride (h-BN) following chemical vapour deposition and during subsequent atmospheric exposure, using scanning electron microscopy, X-ray photoemission spectroscopy, and scanning photoelectron microscopy. We show that regions of the Fe surface covered by h-BN remain in a reduced state during exposure to moist air for ~40 hours at room temperature. This protection is attributed to the strong interfacial interaction between h-BN and Fe, which prevents the rapid intercalation of oxidizing species. Local Fe oxidation is observed on bare Fe regions and close to defects in the h-BN film (e.g. domain boundaries, wrinkles, and edges), which over the longer-term provide pathways for slow bulk oxidation of the Fe. We further confirm that the interface between h-BN and reduced Fe can be recovered by vacuum annealing at ~600 °C, although this is accompanied by the creation of defects within the h-BN film. We discuss the importance of these findings in the context of integrated manufacturing and transfer-free device integration of h-BN, particularly for technologically important applications where h-BN has potential as a tunnel barrier such as magnetic tunnel junctions.S.C. and L.D. acknowledge EPSRC Doctoral Training Awards. H.S. acknowledges a research fellowship from the Japanese Society for the Promotion of Science (JSPS). S.H. acknowledges funding from ERC grant InsituNANO (no. 279342). This research was partially supported by the EUFP7 Work Programme under grant GRAFOL (project reference 285275) and EPSRC under grant GRAPHTED (project reference EP/ ACS Applied Materials & Interfaces Research Article K016636/1). R.S.W. acknowledges a Research Fellowship from St. John’s College, Cambridge, and a Marie Skłodowska-Curie Individual Fellowship (Global) under grant ARTIST (no. 656870) from the European Union’s Horizon 2020 research and innovation programme