COMPETITIVE INTELLIGENCE

There are many challenges to face in this century. It’s an era of information. Those who have the best information are going to win the race for supremacy on the market. More and more managers are aware of the fact that they have to do something to remain on the market and to be successful. They have to adapt and to try to gain an advantage over the competitors. Nowadays, the only thing that makes the difference is the company’s competitiveness. The times when the one who had the capacity to produce more was the leader are long gone; now all the actors on every market are focused on quality and this leads to severe competition. What is left then? How can a company gain competitive advantage? The only thing that can make a difference is not the quality of the product but the quality of the information they posses about the market, the client, the product, the technological process, management etc. It’s about the information management. It’s about competitive intelligence.competitive intelligence, information, intelligence, strategy

PRIORITY MANAGEMENT – A DIRECTION TOWARDS COMPETITIVENESS

In a time when the most of us have to cope with globalization, the key for surpassing the negative effects produced by it, resides in choosing the right strategy. This necessary involves a performance management. Through this paper we propose priority management as an efficient way of thinking about gaining the vital competitive advantage.priority management, the Pareto law, 1-3-6 method, competitiveness, efficiency

Early resistance change and stress/electromigration evolution in near bamboo interconnects

A complete description for early resistance change and mechanical stress evolution in near-bamboo interconnects, related to the electromigration, is given in this paper. The proposed model, for the first time, combines the stress/vacancy concentration evolution with the early resistance change of the Al line with a near-bamboo microstructure, which has been proven to be a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) stres

ONLINE ADVERTISING – A PRACTICAL APPROACH USING GOOGLE’S AD WORDS

The Internet links people from all around the world in their purpose to exchange and get relevant information. Thus, relevant information is the corner stone of a society in general and of a company in particular. The exchange process within the information era is been initiated and controlled by the client. The marketers must wait until the clients decide to participate in the exchange. The clients define what information they need, what offers they are interested in and what prices they are willing to pay. This development enabled companies like Google to manage the different companies’ online targeted advertising using the initial query of the searching persons. Online advertising is nowadays an essential component of one’s company’s promotional mix.SEM (Search engine marketing), online advertising, CPC (cost per click), CTR (click-through rate), Ad Words, Ad Group

Te-based chalcogenide materials for selector applications

The implementation of dense, one-selector one-resistor (1S1R), resistive switching memory arrays, can be achieved with an appropriate selector for correct information storage and retrieval. Ovonic threshold switches (OTS) based on chalcogenide materials are a strong candidate, but their low thermal stability is one of the key factors that prevents rapid adoption by emerging resistive switching memory technologies. A previously developed map for phase change materials is expanded and improved for OTS materials. Selected materials from different areas of the map, belonging to binary Ge-Te and Si-Te systems, are explored. Several routes, including Si doping and reduction of Te amount, are used to increase the crystallization temperature. Selector devices, with areas as small as 55 x 55 nm(2), were electrically assessed. Sub-threshold conduction models, based on Poole-Frenkel conduction mechanism, are applied to fresh samples in order to extract as-processed material parameters, such as trap height and density of defects, tailoring of which could be an important element for designing a suitable OTS material. Finally, a glass transition temperature estimation model is applied to Te-based materials in order to predict materials that might have the required thermal stability. A lower average number of p-electrons is correlated with a good thermal stability

Spectroscopic indications of tunnel barrier charging as the switching mechanism in memristive devices

Resistive random access memory is a promising, energy-efficient, low-power “storage class memory” technology that has the potential to replace both flash storage and on-chip dynamic memory. While the most widely employed systems exhibit filamentary resistive switching, interface-type switching systems based on a tunable tunnel barrier are of increasing interest. They suffer less from the variability induced by the stochastic filament formation process and the choice of the tunnel barrier thickness offers the possibility to adapt the memory device current to the given circuit requirements. Heterostructures consisting of a yttria-stabilized zirconia (YSZ) tunnel barrier and a praseodymium calcium manganite (PCMO) layer are employed. Instead of spatially localized filaments, the resistive switching process occurs underneath the whole electrode. By employing a combination of electrical measurements, in operando hard X-ray photoelectron spectroscopy and electron energy loss spectroscopy, it is revealed that an exchange of oxygen ions between PCMO and YSZ causes an electrostatic modulation of the effective height of the YSZ tunnel barrier and is thereby the underlying mechanism for resistive switching in these devices

Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals

Resistive-switching random access memory (RRAM) is widely considered as a disruptive technology. Despite tremendous efforts in theoretical modeling and physical analysis, details of how the conductive filament (CF) in metal-oxide-based filamentary RRAM devices is modified during normal device operations remain speculative, because direct experimental evidence at defect level has been missing. In this paper, a random-telegraph-signal-based defect-tracking technique (RDT) is developed for probing the location and movements of individual defects and their statistical spatial and energy characteristics in the CF of state-of-the-art hafnium-oxide RRAM devices. For the first time, the critical filament region of the CF is experimentally identified, which is located near, but not at, the bottom electrode with a length of nanometer scale. We demonstrate with the RDT technique that the modification of this key constriction region by defect movements can be observed and correlated with switching operation conditions, providing insight into the resistive switching mechanism

Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability

Random telegraph noise (RTN) is an important intrinsic phenomenon of any logic or memory device that is indicative of the reliability and stochastic variability in its performance. In the context of the resistive random access memory (RRAM), RTN becomes a key criterion that determines the read disturb immunity and memory window between the low (LRS) and high resistance states (HRS). With the drive towards ultra-low power memory (low reset current) and aggressive scaling to 10 × 10 nm2 area, contribution of RTN is significantly enhanced by every trap (vacancy) in the dielectric. The underlying mechanisms governing RTN in RRAM are yet to be fully understood. In this study, we aim to decode the role of conductance fluctuations caused by oxygen vacancy transport and inelastic electron trapping and detrapping processes. The influence of resistance state (LRS, shallow and deep HRS), reset depth and reset stop voltage (VRESET-STOP) on the conductance variability is also investigated. © 2013 IEEE

Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing

Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing due to band tails is an important phenomenon to include in low-temperature analytical MOSFET models as it predicts theoretical lower bounds on the leakage power and supply voltage in tailored cryogenic CMOS technologies with tuned threshold voltages. Previous physics-based modeling required to evaluate functions with no closed-form solutions, defeating the purpose of fast and efficient model evaluation. Thus far, only the empirically proposed expressions are in closed form. This article bridges this gap by deriving a physics-based and closed-form model for the full saturating trend of the subthreshold swing from room down to low temperature. The proposed model is compared against experimental data taken on some long and short devices from a commercial 28-nm bulk CMOS technology down to 4.2 K.Comment: Accepted for publication in IEEE Transactions on Nanotechnolog