Modern technologies in vocational education

The article analyzes the further development of vocational education, which is possible in the revision of the theoretical approaches and the application of new educational technologies. Pedagogical technologies allow to transform the learning process to the path of its preliminary design followed by the reproductionАнализируется дальнейшее развитие профессионально-технического образования, которое возможно при пересмотре теоретических подходов и применении новых педагогических технологий. Педагогические технологии позволяют перевести процесс обучения на путь предварительного его проектирования с последующим воспроизведение

FORMATION GOTOVNOCTI STUDENTS OF TECHNICAL COLLEGES TO THE CHOICE INDIVIDUAL EDUCATIONAL TRAJECTORIES

The article deals with the choice of educational trajectories of students of technical colleges. It seeks to clarify the concept of "individual educational trajectory", and based on the analysis of existing learning environment the necessity of formation students’ readiness to individual choice of educational trajectories in the modern educational space.Статья посвящена проблеме выбора образовательных траекторий студентами технических вузов. В ней предпринята попытка уточнения понятия «индивидуальная образовательная траектория», а также на основе анализа существующих условий обучения обосновывается необходимость формирования готовности студентов к выбору индивидуальных образо-вательных траекторий в современном образовательном пространстве

The problem of choosing individual educational тrajectories by students of technical universities in terms of international educational activities

The article deals with the choice of educational trajectories by students in the international educational space. It attempts to clarify the terms «educational space» and «educational trajectory»Статья посвящена проблеме выбора образовательных траекторий студентами технических вузов в международном образовательном пространстве. В ней предпринята попытка уточнения терминов «образовательное пространство» и «образовательная траектория

Modular training as one of the modern technologies of teaching and learning process

The article discusses the modular training as a way of modernization and efficiency of the educational process. Actualizes the role of the teacher as the controlling unit for the efficiency and quality of teaching-learning processВ статье рассматривается модульное обучение как один из способов модернизации и эффективности учебного процесса. Актуализируется роль преподавателя как контролирующего звена для эффективности и качества учебного-познавательного процесс

Laser-based Diagnostics for Use in Ex-situ Lithium Co-deposit Analysis

Laser-induced breakdown spectroscopy (LIBS) and time of flight (TOF) mass spectrometry of laser-produced ions were tested for ex-situ analysis of lithium co-deposited layers produced by plasma deposition. It was found that LIBS provides an adequate way to observe and measure lithium content in thin co-deposited layers of about 1 µm thickness. TOF mass spectrometry data of the same layers was compared with LIBS. TOF mass spectrometry provided a better resolution; however, the simplicity of LIBS setup and the rate of measurement (less than one minute per measurement) makes it more attractive. Argon was observed in the co-deposited layers, indicating that it, and likely other inert gases, can remain trapped in lithium layers even after a prolonged exposure to and chemical reaction with atmospheric air

Fermi-liquid behaviour of the low-density 2D hole gas in GaAs/AlGaAs heterostructure at large values of r_s

We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from 'metallic'-to-'insulating' behaviour of R(T).It has been established that, at r_s as large as 29, negative magnetoresistance does exist and is well described by weak localisation. The dephasing time extracted from the magnetoresistance is dominated by the T^2 -term due to Landau scattering in the clean limit. The effect of hole-hole interactions, however, is suppressed when compared with the theory for small r_s.Comment: 4 pages ReVTeX, 4 ps figure

Experimental study of weak antilocalization effect in a high mobility InGaAs/InP quantum well

The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular attention is paid to the experimental extraction of phase-breaking and spin-orbit scattering times when weak anti- localization effects are prominent. Compared with metals and low mobility semiconductors the characteristic magnetic field $B_{tr} = \hbar/4eD \tau$ in high mobility samples is very small and the experimental dependencies of the interference effects extend to fields several hundreds of times larger. Fitting experimental results under these conditions therefore requires theories valid for arbitrary magnetic field. It was found, however, that such a theory was unable to fit the experimental data without introducing an extra, empirical, scale factor of about 2. Measurements in tilted magnetic fields and as a function of temperature established that both the weak localization and the weak anti-localization effects have the same, orbital origin. Fits to the data confirmed that the width of the low field feature, whether a weak localization or a weak anti-localization peak, is determined by the phase-breaking time and also established that the universal (negative) magnetoresistance observed in the high field limit is associated with a temperature independent spin-orbit scattering time.Comment: 13 pages including 10 figure

Power counting and renormalization group invariance in the subtracted kernel method for the two-nucleon system

We apply the subtracted kernel method (SKM), a renormalization approach based on recursive multiple subtractions performed in the kernel of the scattering equation, to the chiral nucleon-nucleon (NN) interactions up to next-to-next-to-leading-order (NNLO). We evaluate the phase-shifts in the 1S0 channel at each order in Weinberg's power counting scheme and in a modified power counting scheme which yields a systematic power-law improvement. We also explicitly demonstrate that the SKM procedure is renormalization group invariant under the change of the subtraction scale through a non-relativistic Callan-Symanzik flow equation for the evolution of the renormalized NN interactions.Comment: Accepted for publication in Journal of Physics G: Nuclear and Particle Physic

High resolution study of the Lambda p final state interaction in the reaction p + p -> K+ + (Lambda p)

The reaction pp -> K+ + (Lambda p) was measured at Tp=1.953 GeV and Theta = 0 deg with a high missing mass resolution in order to study the Lambda p final state interaction. The large final state enhancement near the Lambda p threshold can be described using the standard Jost-function approach. The singlet and triplet scattering lengths and effective ranges are deduced by fitting simultaneously the Lambda p invariant mass spectrum and the total cross section data of the free Lambda p scattering.Comment: submitted to Physics Letters B, 10 pages, 3 figure

Strangeness Production in Proton-Proton Collisions Close to Threshold

Exclusive data on the reactions pp -> ppK+K- and pp -> pK+ Lambda/Sigma0 have been taken at the cooler synchrotron COSY close to threshold. At equal excess energies, an enhancement of the Lambda/Sigma0 ratio by one order of magnitude has been observed compared to data at higher excess energies. New results obtained at the COSY-11 facility explore the transition region between this low-energy Sigma0 suppression and excess energies of 60 MeV. A first total cross section for elementary antikaon production below the phi threshold has been determined, two orders of magnitude smaller compared to kaon production at the same excess energy.Comment: 4 pages, 2 figures, Talk given by P. Moskal at 16th International Conference on Particles and Nuclei (PANIC 02), Osaka, Japan, 30 Sep - 4 Oct 200