636 research outputs found

    The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique

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    IEEE Despite the tremendous efforts in the past decade devoted to the development of filamentary resistive-switching devices (RRAM), there is still a lack of in-depth understanding of its over-reset phenomenon. At higher reset stop voltages that exceed a certain threshold, the resistance at high resistance state reduces, leading to an irrecoverable window reduction. The over-reset phenomenon limits the maximum resistance window that can be achieved by using a higher Vreset, which also degrades its potential in applications such as multi-level memory and neuromorphic synapses. In this work, the over-reset is investigated by cyclic reset operations with incremental stop voltages, and is explained by defect generation in the filament constriction region of Ta2O5 RRAM devices. This is supported by the statistical spatial defects profile obtained from the random telegraph noise based defect probing technique. The impact of forming compliance current on the over-reset is also evaluated

    RTN in GexSe1-x OTS Selector Devices

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    Random telegraph noise (RTN) signals in GexSe1-x ovonic threshold switching (OTS) selector have been analyzed in this work, both before and after the first-fire (FF) operation and at on- and off-states. It is observed that RTN appears after the FF, and its absolute amplitude at the off-state is small and negligible in comparison with the RTN signals in RRAM devices. At the on-state, large RTN signals are observed, which can either partially or fully block the conduction path, supporting that a conductive filament is formed or activated by FF and then modulated during switching. Statistical analysis reveals that the relative RTN amplitude at on-state in GexSe1-x OTS selector is smaller than or equivalent to those in RRAM devices

    Intranasal peptide-induced tolerance and linked suppression: consequences of complement deficiency.

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    A role for complement, particularly the classical pathway, in the regulation of immune responses is well documented. Deficiencies in C1q or C4 predispose to autoimmunity, while deficiency in C3 affects the suppression of contact sensitization and generation of oral tolerance. Complement components including C3 have been shown to be required for both B-cell and T-cell priming. The mechanisms whereby complement can mediate these diverse regulatory effects are poorly understood. Our previous work, using the mouse minor histocompatibility (HY) model of skin graft rejection, showed that both C1q and C3 were required for the induction of tolerance following intranasal peptide administration. By comparing tolerance induction in wild-type C57BL/6 and C1q-, C3-, C4- and C5-deficient C57BL/6 female mice, we show here that the classical pathway components including C3 are required for tolerance induction, whereas C5 plays no role. C3-deficient mice failed to generate a functional regulatory T (Treg) -dendritic cell (DC) tolerogenic loop required for tolerance induction. This was related to the inability of C3-deficient DC to up-regulate the arginine-consuming enzyme, inducible nitric oxide synthase (Nos-2), in the presence of antigen-specific Treg cells and peptide, leading to reduced Treg cell generation. Our findings demonstrate that the classical pathway and C3 play a critical role in the peptide-mediated induction of tolerance to HY by modulating DC function

    Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network

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    Resistive switching memory devices can be categorized into either filamentary or non-filamentary ones depending on the switching mechanisms. Both types have been investigated as novel synaptic devices in hardware neural networks, but there is a lack of comparative study between them, especially in random telegraph noise (RTN) which could induce large resistance fluctuations. In this work, we analyze the amplitude and occurrence rate of RTN in both Ta2O5 filamentary and TiO2/a-Si (a-VMCO) non-filamentary RRAM devices and evaluate its impact on the pattern recognition accuracy of neural networks. It is revealed that the non-filamentary RRAM has a tighter RTN amplitude distribution and much lower RTN occurrence rate than its filamentary counterpart which leads to negligible RTN impact on recognition accuracy, making it a promising candidate in synaptic application

    Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors

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    Ovonic threshold switching (OTS) selector is a promising candidate to suppress the sneak current paths in resistive switching memory (RRAM) arrays. Variations in the threshold voltage (Vth), and the hold voltage (Vhd) have been reported, but a quantitative analysis of the switching probability dependence on the OTS operation conditions is still missing. A novel characterization method is developed in this work, and the time-to-switch-on/off (ton/toff) at a constant VOTS is found following the Weibull distribution, based on which the dependence of switching probability on pulse bias and time can be extracted and extrapolated, and the switching probability can be ensured with appropriately chosen operation conditions. The difference between square and triangle switching pulses is also explained. This provides a practical guidance for predicting the switching probability under different operation conditions and for designing reliable one-selector-one-RRAM (1S1R) arrays

    Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching

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    Volatile Ovonic threshold switching (OTS) are promising not only as the selector in crossbar resistive switching memory arrays, but also as true random number generators (TRNG) by utilizing its probabilistic switching characteristics. However, investigation on the reliability of OTS-based TRNG is still lacking, which hinders its practical application. Previously, we found that switching probability is dependent on the pulse amplitude and width. In this work, we report that relaxation which happens during the time interval between pulses can cause switching probability drift. Optimizing the bit-generation waveform and modulating the pulse conditions could provide a practical solution, in addition to the impact of external bias and temperature. This work provides useful guidance for the practical design and operation of OTS-based TRNGs

    Activation of cGMP-Dependent Protein Kinase Stimulates Cardiac ATP-Sensitive Potassium Channels via a ROS/Calmodulin/CaMKII Signaling Cascade

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    ) channels, an ion channel critical for stress adaptation in the heart; however, the underlying mechanism remains largely unknown. The present study was designed to address this issue. channels was confirmed in intact ventricular cardiomyocytes, which was ROS- and CaMKII-dependent. Kinetically, PKG appeared to stimulate these channels by destabilizing the longest closed state while stabilizing the long open state and facilitating opening transitions. channels and contribute to cardiac protection against ischemia-reperfusion injury

    Production of phi mesons at mid-rapidity in sqrt(s_NN) = 200 GeV Au+Au collisions at RHIC

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    We present the first results of meson production in the K^+K^- decay channel from Au+Au collisions at sqrt(s_NN) = 200 GeV as measured at mid-rapidity by the PHENIX detector at RHIC. Precision resonance centroid and width values are extracted as a function of collision centrality. No significant variation from the PDG accepted values is observed. The transverse mass spectra are fitted with a linear exponential function for which the derived inverse slope parameter is seen to be constant as a function of centrality. These data are also fitted by a hydrodynamic model with the result that the freeze-out temperature and the expansion velocity values are consistent with the values previously derived from fitting single hadron inclusive data. As a function of transverse momentum the collisions scaled peripheral.to.central yield ratio RCP for the is comparable to that of pions rather than that of protons. This result lends support to theoretical models which distinguish between baryons and mesons instead of particle mass for explaining the anomalous proton yield.Comment: 326 authors, 24 pages text, 23 figures, 6 tables, RevTeX 4. To be submitted to Physical Review C as a regular article. Plain text data tables for the points plotted in figures for this and previous PHENIX publications are (or will be) publicly available at http://www.phenix.bnl.gov/papers.htm

    Catalytic gas-phase glycerol processing over SiO2-, Cu-, Ni-and Fe-supported Au nanoparticles

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    In this study, we investigated different metal pairings of Au nanoparticles (NPs) as potential catalysts for glycerol dehydration for the first time. All of the systems preferred the formation of hydroxyacetone (HYNE). Although the bimetallics that were tested, i.e., Au NPs supported on Ni, Fe and Cu appeared to be more active than the Au/SiO2 system, only Cu supported Au NPs gave high conversion (ca. 63%) and selectivity (ca. 70%) to HYNE
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