A Schr¨odinger-Poisson-Boltzmann system applied to the charge carrier transport in strained silicon

In this paper, a kinetic modeling of the electron transport inside a strained-silicon device structure is established. The reduced conduction band energy of a strained layer gives rise to a potential well structure, which may have a varying bottom energy. Electrons are introduced into the well by remote antimony doping, where they form a two-dimensional electron gas. Quantum-mechanical aspects are treated by using a self-consistent Schr¨odinger-Poisson block (subband model). To account for the transport properties of the strained-silicon device structure, an adapted semi-classical formulation of the Boltzmann transport equation is applied. This approach allows us to consistently include the relevant scattering mechanisms. The resulting coupled Schr¨odinger-Poisson-Boltzmann system is used for a phononlimited mobility estimate

Combined Numerical Method for Multi-Scale Analysis of Tablet Coating Processes

In the pharmaceutical industry spray coating is a frequently used method to apply a film layer on the surface of tablets or pellets. [...

Numerical Simulation of Film Formation in Tablet Coating

The application of a coating layer on a tablet is a commonly used technique to selectively control tablet characteristics. [...