Conserved spin and orbital phase along carbon nanotubes connected with multiple ferromagnetic contacts

We report on spin dependent transport measurements in carbon nanotubes based multi-terminal circuits. We observe a gate-controlled spin signal in non-local voltages and an anomalous conductance spin signal, which reveal that both the spin and the orbital phase can be conserved along carbon nanotubes with multiple ferromagnetic contacts. This paves the way for spintronics devices exploiting both these quantum mechanical degrees of freedom on the same footing.Comment: 8 pages - minor differences with published versio

Structural recovery of ion implanted ZnO nanowires

5 pagesInternational audienceIon implantation is an interesting method to dope semiconducting materials such as zinc oxide provided that the implantation-induced defects can be subsequently removed. Nitrogen implantation followed by anneals under O2 were carried out on zinc oxide nanowires in the same conditions as in a previous study on bulk ZnO [J. Appl.Phys. 109, 023513 (2011)], allowing a direct comparison of the defect recovery mechanisms. Transmission electron microscopy and cathodoluminescence were carried out to assess the effects of nitrogen implantation and of subsequent anneals on the structural and optical properties of ZnO nanowires. Defect recovery is shown to be more effective in nanowires compared with bulk material due to the proximity of free surfaces. Nevertheless, the optical emission of implanted and annealed nanowires deteriorated compared to as-grown nanowires, as also observed for unimplanted and annealed nanowires. This is tentatively attributed to the dissociation of excitons in the space charge region induced by O2 adsorption on the nanowire surface

The Mw = 6.3, November 21, 2004, Les Saintes earthquake (Guadeloupe): Tectonic setting, slip model and static stress changes,

International audienceOn November 21, 2004, a magnitude 6.3 earthquake occurred offshore, 10 km south of Les Saintes archipelago in Guadeloupe (French West Indies). There were more than 30000 aftershocks recorded in the following two years, most of them at shallow depth near the islands of the archipelago. The main shock and its main aftershock of February 14, 2005 (Mw = 5.8) ruptured a NE-dipping normal fault (Roseau fault), mapped and identified as active from high-resolution bathymetric data a few years before. This fault belongs to an arc-parallel en echelon fault system that follows the inner edge of the northern part of the Lesser Antilles arc, accommodating the sinistral component of oblique convergence between the North American and Caribbean plates. The distribution of aftershocks and damage (destruction and landslides) are consistent with the main fault plane location and attitude. The slip model of the main shock, obtained by inverting jointly global broadband and local strong motion records, is characterized by two main slip zones located 5 to 10 km to the SE and NW of the hypocenter. The main shock is shown to have increased the Coulomb stress at the tips of the ruptured plane by more than 4 bars where most of the aftershocks occurred, implying that failures on fault system were mainly promoted by static stress changes. The earthquake also had an effect on volcanic activity since the Boiling Lake in Dominica drained twice, probably as a result of the extensional strain induced by the earthquake and its main aftershock

Quantized conductance in a one-dimensional ballistic oxide nanodevice

Electric-field effect control of two-dimensional electron gases (2-DEG) has enabled the exploration of nanoscale electron quantum transport in semiconductors. Beyond these classical materials, transition metal-oxide-based structures have d-electronic states favoring the emergence of novel quantum orders absent in conventional semiconductors. In this context, the LaAlO3/SrTiO3 interface that combines gate-tunable superconductivity and sizeable spin-orbit coupling is emerging as a promising platform to realize topological superconductivity. However, the fabrication of nanodevices in which the electronic properties of this oxide interface can be controlled at the nanoscale by field-effect remains a scientific and technological challenge. Here, we demonstrate the quantization of conductance in a ballistic quantum point contact (QPC), formed by electrostatic confinement of the LaAlO3/SrTiO3 2-DEG with a split-gate. Through finite source-drain voltage, we perform a comprehensive spectroscopic investigation of the 3d energy levels inside the QPC, which can be regarded as a spectrometer able to probe Majorana states in an oxide 2-DEG

Competition between electron pairing and phase coherence in superconducting interfaces

In LaAlO3/SrTiO3 heterostructures, a gate tunable superconducting electron gas is confined in a quantum well at the interface between two insulating oxides. Remarkably, the gas coexists with both magnetism and strong Rashba spin–orbit coupling. However, both the origin of superconductivity and the nature of the transition to the normal state over the whole doping range remain elusive. Here we use resonant microwave transport to extract the superfluid stiffness and the superconducting gap energy of the LaAlO3/SrTiO3 interface as a function of carrier density. We show that the superconducting phase diagram of this system is controlled by the competition between electron pairing and phase coherence. The analysis of the superfluid density reveals that only a very small fraction of the electrons condenses into the superconducting state. We propose that this corresponds to the weak filling of high- energy dxz/dyz bands in the quantum well, more apt to host superconductivity

Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO3/SrTiO3 devices

The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), represents a major breakthrough. Here, we report on the realisation of a field-effect LaAlO3/SrTiO3 device, whose physical properties, including superconductivity and SOC, can be tuned over a wide range by a top-gate voltage. We derive a phase diagram, which emphasises a field-effect-induced superconductor-to-insulator quantum phase transition. Magneto-transport measurements indicate that the Rashba coupling constant increases linearly with electrostatic doping. Our results pave the way for the realisation of mesoscopic devices, where these two properties can be manipulated on a local scale by means of top-gates

Self-assembled zinc blende GaN quantum dots grown

Zinc blende ~ZB! GaN quantum dots have been grown by plasma-assisted molecular-beam epitaxy on AlN buffer layers using 3C-SiC~001! substrates. The two- to three-dimensional growth mode transition is studied by following the evolution of the reflection high-energy electron diffraction pattern. ZB GaN island layers are further examined by atomic force microscopy and transmission electron microscopy, extracting a mean island height of 1.6 nm and a mean diameter of 13 nm at a density of 1.331011 cm22. Embedded ZB GaN quantum dots show strong ultraviolet photoluminescence without any thermal quenching up to room temperature.SFERERegion Rhône-AlpesConsejo Nacional de Ciencia y Tecnologí

Clean and As-covered zinc-blende GaN (001) surfaces: Novel surface structures and surfactant behavior

We have investigated clean and As-covered zinc-blende GaN (001) surfaces, employing first-principles total-energy calculations. For clean GaN surfaces our results reveal a novel surface structure very different from the well-established dimer structures commonly observed on polar III-V (001) surfaces: The energetically most stable surface is achieved by a Peierls distortion of the truncated (1x1) surface rather than through addition or removal of atoms. This surface exhibits a (1x4) reconstruction consisting of linear Ga tetramers. Furthermore, we find that a submonolayer of arsenic significantly lowers the surface energy indicating that As may be a good surfactant. Analyzing surface energies and band structures we identify the mechanisms which govern these unusual structures and discuss how they might affect growth properties.Comment: 4 pages, 3 figures, to be published in Appears in Phys. Rev. Lett. (in print). Other related publications can be found at http://www.rz-berlin.mpg.de/th/paper.htm