Real time decoherence of Landau and Levitov quasi-particles in quantum Hall edge channels

Quantum Hall edge channels at integer filling factor provide a unique test-bench to understand decoherence and relaxation of single electronic excitations in a ballistic quantum conductor. In this Letter, we obtain a full visualization of the decoherence scenario of energy (Landau) and time (Levitov) resolved single electron excitations at filling factor $\nu=2$. We show that the Landau excitation exhibits a fast relaxation followed by spin-charge separation whereas the Levitov excitation only experiences spin-charge separation. We finally suggest to use Hong-Ou-Mandel type experiments to probe specific signatures of these different scenarios.Comment: 14 pages, 8 figure

Structural build-up of cementitious paste under external magnetic fields

Engineering application processes of fresh concrete include transporting, pumping, formwork casting, etc. Each process is a significant factor influencing properties of fresh and hardened concrete. However, many contradicting requirements of fresh concrete performances (such as structuration rate) exist in these operation processes. Therefore, advanced techniques need to be proposed to satisfy future challenges. Actively controlling the stiffness by applying external magnetic fields would be a potential solution for the contradicting requirements, and could make the pumping and casting processes smarter and more reliable. In the present paper, the effects of magnetic field strength and magnetizing time on structural build-up of cementitious paste are discussed. The results show that higher magnetic field strengths result in higher percolation time and lower phase angle at equilibrium state. However, the application of external magnetic fields with low flux density has little effects on the viscoelastic behaviour of cementitious paste. Under high magnetic field strengths, the viscousliquid behaviour dominates the elastic-solid behaviour at early stage, while the solid-like behaviour becomes more dominant with magnetizing time

NGC1377: An Extragalactic Proto-Starburst

NGC1377 is the archetype of a class of galaxies called nascent starbursts, selected by their very high infrared to radio continuum flux ratios and their high dust temperatures. This nearby galaxy is an ideal test case to refine the understanding of the mechanisms of the infrared-radio correlation of star-forming galaxies; to characterize the physical conditions of an embedded starburst at its very onset; and to gain a better knowledge of the activity of a class of ultraluminous galaxies sharing the main infrared-radio properties of NGC1377. We present new data on NGC1377 obtained as part of the Spitzer Infrared Nearby Galaxies Survey (SINGS) Legacy program and discuss briefly our interpretation of the combined optical, infrared and radio properties

Acid/base-triggered switching of circularly polarized luminescence and electronic circular dichroism in organic and organometallic helicenes.

Electronic circular dichroism and circularly polarized luminescence acid/base switching activity has been demonstrated in helicene-bipyridine proligand 1 a and in its “rollover” cycloplatinated derivative 2 a. Whereas proligand 1 a displays a strong bathochromic shift (>160 nm) of the nonpolarized and circularly polarized luminescence upon protonation, complex 2 a displays slightly stronger emission. This strikingly different behavior between singlet emission in the organic helicene and triplet emission in the organometallic derivative has been rationalized by using quantum-chemical calculations. The very large bathochromic shift of the emission observed upon protonation of azahelicene-bipyridine 1 a has been attributed to the decrease in aromaticity (promoting a charge-transfer-type transition rather than a π–π* transition) as well as an increase in the HOMO–LUMO character of the transition and stabilization of the LUMO level upon protonation

A Spitzer Unbiased Ultradeep Spectroscopic Survey

We carried out an unbiased, spectroscopic survey using the low-resolution module of the infrared spectrograph (IRS) on board Spitzer targeting two 2.6 square arcminute regions in the GOODS-North field. IRS was used in spectral mapping mode with 5 hours of effective integration time per pixel. One region was covered between 14 and 21 microns and the other between 20 and 35 microns. We extracted spectra for 45 sources. About 84% of the sources have reported detections by GOODS at 24 microns, with a median F_nu(24um) ~ 100 uJy. All but one source are detected in all four IRAC bands, 3.6 to 8 microns. We use a new cross-correlation technique to measure redshifts and estimate IRS spectral types; this was successful for ~60% of the spectra. Fourteen sources show significant PAH emission, four mostly SiO absorption, eight present mixed spectral signatures (low PAH and/or SiO) and two show a single line in emission. For the remaining 17, no spectral features were detected. Redshifts range from z ~ 0.2 to z ~ 2.2, with a median of 1. IR Luminosities are roughly estimated from 24 microns flux densities, and have median values of 2.2 x 10^{11} L_{\odot} and 7.5 x 10^{11} L_{\odot} at z ~ 1 and z ~ 2 respectively. This sample has fewer AGN than previous faint samples observed with IRS, which we attribute to the fainter luminosities reached here.Comment: Published in Ap

Logarithmic behavior of degradation dynamics in metal--oxide semiconductor devices

In this paper the authors describe a theoretical simple statistical modelling of relaxation process in metal-oxide semiconductor devices that governs its degradation. Basically, starting from an initial state where a given number of traps are occupied, the dynamics of the relaxation process is measured calculating the density of occupied traps and its fluctuations (second moment) as function of time. Our theoretical results show a universal logarithmic law for the density of occupied traps $\bar{} \sim \phi (T,E_{F}) (A+B \ln t)$, i.e., the degradation is logarithmic and its amplitude depends on the temperature and Fermi Level of device. Our approach reduces the work to the averages determined by simple binomial sums that are corroborated by our Monte Carlo simulations and by experimental results from literature, which bear in mind enlightening elucidations about the physics of degradation of semiconductor devices of our modern life