Excitation properties of the divacancy in 4H-SiC

We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs only when the PL is excited below certain photon energies (thresholds), which differ for the four different inequivalent divacancy configurations in 4H-SiC. Refined theoretical ab initio calculation for the charge-transfer levels of the divacancy show very good agreement between the position of the (0/-) level with respect to the conduction band for each divacancy configurations and the corresponding experimentally observed threshold, allowing us to associate the PL decay with conversion of the divacancy from neutral to negative charge state due to capture of electrons photoionized from other defects (traps) by the excitation. Electron paramagnetic resonance measurements are conducted in dark and under excitation similar to that used in the PL experiments and shed light on the possible origin of traps in the different samples. A simple model built on this concept agrees well with the experimentally-observed decay curves.Comment: 28 pages, 6 figure

Технология лекарственных средств - на съездах фармацевтов БССР и Республики Беларусь

Transition metal defects were studied in different polytypes of silicon carbide (SiC) by ab initio supercell calculations. We found asymmetric split-vacancy (ASV) complexes for these defects that preferentially form at only one site in hexagonal polytypes, and they may not be detectable at all in cubic polytype. Electron spin resonance study demonstrates the existence of ASV complex in niobium doped 4H polytype of SiC.Funding Agencies|Swedish Foundation for Strategic Research||Swedish Research Council||Swedish Energy Agency||Swedish National Infrastructure for Computing|SNIC 011/04-8SNIC001-10-223|Knut and Alice Wallenberg Foundation|

Opportunities for development of tourism and small enterprises in Dojran municipality in Macedonia

Tourism is distinguished as a priority area of intervention in the municipality of Dojran. This is primarily due to its importance and the role in the economic development of the municipality and the fact that wider population and economic entities are involved in tourism. In terms of the activity performed, the majority of small enterprises in Dojran region or 57.5% are registered as enterprises for accommodation and realization of activities for preparing meals and serving food, 15% carry out trade entrepreneurial activity from the area of wholesale and retail trading, 7.8% produce plant and animal products and deal with hunting and services, fishery and aquaculture, 6.7% of small enterprises are pursuing entrepreneurial activities in the field of land transport and 4.3% of small enterprises are pursuing other entertainment activities. Part of the structures and capabilities that make tourism (tourism facilities and infrastructure, natural resources, etc.), represent strong side of the municipality, where the advantages should be used as a platform for taking measures and actions for its strengthening, and treats (unused touristic capacities,insufficiency of skilled labor,etc.) should be used to work on elimination of such occurrences and building a foundation for their improvement and transformation into strengths. The promotion of tourism and small-size enterprises in the municipality will affect the realization of other economic and social strategic goals, set out in other priority areas. Key words: tourism destination, tourism, small enterprise

Identification and tunable optical coherent control of transition-metal spins in silicon carbide

Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously the nitrogen-vacancy defect in diamond. However, integration in communication technology is hindered by the fact that their optical transitions lie outside telecom wavelength bands. Several transition-metal impurities in silicon carbide do emit at and near telecom wavelengths, but knowledge about their spin and optical properties is incomplete. We present all-optical identification and coherent control of molybdenum-impurity spins in silicon carbide with transitions at near-infrared wavelengths. Our results identify spin $S=1/2$ for both the electronic ground and excited state, with highly anisotropic spin properties that we apply for implementing optical control of ground-state spin coherence. Our results show optical lifetimes of $\sim$60 ns and inhomogeneous spin dephasing times of $\sim$0.3 $\mu$s, establishing relevance for quantum spin-photon interfacing.Comment: Updated version with minor correction, full Supplementary Information include

Optical properties and Zeeman spectroscopy of niobium in silicon carbide

The optical signature of niobium in the low-temperature photoluminescence spectra of three common polytypes of SiC (4H, 6H, and 15R) is observed and confirms the previously suggested concept that Nb occupies preferably the Si-C divacancy with both Si and C at hexagonal sites. Using this concept we propose a model considering a Nb-bound exciton, the recombination of which is responsible for the observed luminescence. The exciton energy is estimated using first-principles calculation and the result is in very good agreement with the experimentally observed photon energy in 4H SiC at low temperature. The appearance of six Nb-related lines in the spectra of the hexagonal 4H and 6H polytypes at higher temperatures is tentatively explained on the grounds of the proposed model and the concept that the Nb center can exist in both C1h and C3v symmetries. The Zeeman splitting of the photoluminescence lines is also recorded in two different experimental geometries and the results are compared with theory based on phenomenological Hamiltonians. Our results show that Nb occupying the divacancy at the hexagonal site in the studied SiC polytypes behaves like a deep acceptor

Object Recognition in Forward Looking Sonar Images using Transfer Learning

Forward Looking Sonars (FLS) are a typical choiceof sonar for autonomous underwater vehicles. They are mostoften the main sensor for obstacle avoidance and can be usedfor monitoring, homing, following and docking as well. Thosetasks require discrimination between noise and various classes ofobjects in the sonar images. Robust recognition of sonar data stillremains a problem, but if solved it would enable more autonomyfor underwater vehicles providing more reliable informationabout the surroundings to aid decision making. Recent advancesin image recognition using Deep Learning methods have beenrapid. While image recognition with Deep Learning is known torequire large amounts of labeled data, there are data-efficientlearning methods using generic features learned by a networkpre-trained on data from a different domain. This enables usto work with much smaller domain-specific datasets, makingthe method interesting to explore for sonar object recognitionwith limited amounts of training data. We have developed aConvolutional Neural Network (CNN) based classifier for FLS-images and compared its performance to classification usingclassical methods and hand-crafted features.QC 20190423SMARC SSF IRC15-004