Dual-gated bilayer graphene hot electron bolometer

Detection of infrared light is central to diverse applications in security, medicine, astronomy, materials science, and biology. Often different materials and detection mechanisms are employed to optimize performance in different spectral ranges. Graphene is a unique material with strong, nearly frequency-independent light-matter interaction from far infrared to ultraviolet, with potential for broadband photonics applications. Moreover, graphene's small electron-phonon coupling suggests that hot-electron effects may be exploited at relatively high temperatures for fast and highly sensitive detectors in which light energy heats only the small-specific-heat electronic system. Here we demonstrate such a hot-electron bolometer using bilayer graphene that is dual-gated to create a tunable bandgap and electron-temperature-dependent conductivity. The measured large electron-phonon heat resistance is in good agreement with theoretical estimates in magnitude and temperature dependence, and enables our graphene bolometer operating at a temperature of 5 K to have a low noise equivalent power (33 fW/Hz1/2). We employ a pump-probe technique to directly measure the intrinsic speed of our device, >1 GHz at 10 K.Comment: 5 figure

Social Relationships and Mortality Risk: A Meta-analytic Review

In a meta-analysis, Julianne Holt-Lunstad and colleagues find that individuals' social relationships have as much influence on mortality risk as other well-established risk factors for mortality, such as smoking

Assuring Crop Protection in the Face of Climate Change Through an Understanding of Herbicide Metabolisms and Enhanced Weed Control Strategies

The prevention and management of weeds have been difficult throughout the history of food production. We are now entering into a new era where new challenges are arising more rapidly due in part to the rapid population growth, which places an unprecedented demand upon both natural and agricultural ecosystems to fulfil food, fibre, and feed for at least another two billion people by 2050. Climatic change is associated with a higher frequency of extreme weather events, and it is generally agreed that this will have a drastic impact on ecosystem productivity and biodiversity. The present world atmospheric temperature has increased by 1.0 °C since 1900 with half of this rise coming in the past 30 years. Crop production is directly affected by the direct effects of climate change (temperature and water stress) and indirect effects of increased competition from weeds and other pest species. In a field situation, crop plants are inevitably surrounded by an assemblage of C3 and C4 plants, and a considerable variation in the growth response of weeds to climate change have been reported. In this chapter, we present an overview of the impact of temperature rise, carbon dioxide increase, and changed rainfall patterns on weed composition, distribution, abundance, and our current approaches to weed management. There is a high risk that some weed species will shift their range with the change in temperature and precipitation patterns. The efficacy of chemical weed control depends on the environmental conditions before, during and after the herbicide application. The changes in physiology, morphology, and anatomy of plants will result in altered weed growth, crop-weed competition, and herbicide efficacy under elevated temperature and/or carbon dioxide. Global warming may increase the risk of evolution of nontarget site resistance mechanisms against herbicides in the weed plants and thus decrease herbicide efficacy. The anticipated actions in these areas are also discussed in the end which may enhance our understanding of the impact of climate change on the practice and future of weed management and crop production. © Springer Nature Switzerland AG 2020

P-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies

Copyright © 2019 American Chemical Society. The synthesis of graphene on cubic silicon carbide on silicon pseudosubstrates draws enormous interest due to the potential integration of the 2D material with the well-established silicon technology and processing. However, the control of transport properties over large scales on this platform, essential for integrated electronics and photonics applications, has lagged behind so far, due to limitations such as 3C-SiC/Si interface instability and nonuniform graphene coverage. We address these issues by obtaining an epitaxial graphene (EG) onto 3C-SiC on a highly resistive silicon substrate using an alloy-mediated, solid-source graphene synthesis. We report the transport properties of EG grown over large areas directly on 3C-SiC(100) and 3C-SiC(111) substrates, and we present the corresponding physical models. We observe that the carrier transport of EG/3C-SiC is dominated by the graphene-substrate interaction rather than the EG grain size, sharing the same conductivity and same inverse power law as EG on 4H- or 6H-SiC(0001) substrates - although the grain sizes for the latter are vastly different. In addition, we show that the induced oxidation/silicates at the EG/3C-SiC interface generate a p-type charge in this graphene, particularly high for the EG/3C-SiC(001). When silicates are at the interface, the presence of a buffer layer in the EG/3C-SiC(111) system is found to reduce somewhat the charge transfer. This work also indicates that a renewed focus on the understanding and engineering of the EG interfaces could very well enable the long sought-after graphene-based electronics and photonics integrated on silicon

Quasi-freestanding AA-stacked bilayer graphene induced by calcium intercalation of the graphene-silicon carbide interface

We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminating SiC. As a consequence, the system becomes highly n-doped. Comparison to DFT calculations shows that the band dispersion, as determined by ARPES, deviates from the band structure expected for Bernal-stacked bilayer graphene. Instead, the electronic structure closely matches AA-stacked bilayer graphene on calcium-terminated SiC, indicating a spontaneous transition from AB- to AA-stacked bilayer graphene following calcium intercalation of the underlying graphene-SiC interface

Correlation-induced single-flux-quantum penetration in quantum rings

Contains fulltext : 83667.pdf (publisher's version ) (Closed access)5 p

Capital mobility and labor market volatility

Capital mobility, Efficiency wages, Labor market volatility, E44, F36, F41,