On a diffuse interface model for tumour growth with non-local interactions and degenerate mobilities

We study a non-local variant of a diffuse interface model proposed by Hawkins--Darrud et al. (2012) for tumour growth in the presence of a chemical species acting as nutrient. The system consists of a Cahn--Hilliard equation coupled to a reaction-diffusion equation. For non-degenerate mobilities and smooth potentials, we derive well-posedness results, which are the non-local analogue of those obtained in Frigeri et al. (European J. Appl. Math. 2015). Furthermore, we establish existence of weak solutions for the case of degenerate mobilities and singular potentials, which serves to confine the order parameter to its physically relevant interval. Due to the non-local nature of the equations, under additional assumptions continuous dependence on initial data can also be shown.Comment: 28 page

Modelling of broadband light sources based on InAs / INxGA1-xAS metamorphic quantum dots

We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAs quantum dots (QDs) embedded into a metamorphic 4-step-graded InxGa1- xAs buffer with x = 0.10, 0.20, 0.30, 0.40. We developed a model to calculate metamorphic QD energy levels based on realistic QD parameters and on strain-dependent material properties: results of simulations were validated against experimental values. By simulating the broadband metamorphic structure, we demonstrated that its light emission can cover the whole 1.0 - 1.7 μm range with a bandwidth of 550 nm at 10K. The emission spectrum was then assessed under realistic electrical injection conditions, at room temperature, through device-level simulations based on a coupled drift-diffusion and QD dynamics model. As metamorphic QD devices have been already fabricated with satisfying performances we believe that this proposal is a viable option to realize broader band light-emitting devices such as superluminescent diodes

Broadband light sources based on InAs/InGaAs metamorphic quantum dots

We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAsquantum dots(QDs) embedded into a metamorphic step-graded InxGa1−xAs buffer. We developed a model to calculate the metamorphic QD energy levels based on the realistic QD parameters and on the strain-dependent material properties; we validated the results of simulations by comparison with the experimental values. On this basis, we designed a p-i-n heterostructure with a graded index profile toward the realization of an electrically pumped guided wave device. This has been done by adding layers where QDs are embedded in InxAlyGa1−x−yAs layers, to obtain a symmetric structure from a band profile point of view. To assess the room temperature electro-luminescenceemission spectrum under realistic electrical injection conditions, we performed device-level simulations based on a coupled drift-diffusion and QD rate equation model. On the basis of the device simulation results, we conclude that the present proposal is a viable option to realize broadband light-emitting devices

97: Positron Emission Tomography Identifies a Differential Pattern of Bone Marrow FdG Uptake in "Poor" and "Good" Peripheral Stem Cell Mobilizers

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Detection of Nitroaromatic Explosives in Air by Amino-Functionalized Carbon Nanotubes

Nitroaromatic explosives are the most common explosives, and their detection is important to public security, human health, and environmental protection. In particular, the detection of solid explosives through directly revealing the presence of their vapors in air would be desirable for compact and portable devices. In this study, amino-functionalized carbon nanotubes were used to produce resistive sensors to detect nitroaromatic explosives by interaction with their vapors. Devices formed by carbon nanotube networks working at room temperature revealed trinitrotoluene, one of the most common nitroaromatic explosives, and di-nitrotoluene-saturated vapors, with reaction and recovery times of a few and tens of seconds, respectively. This type of resistive device is particularly simple and may be easily combined with low-power electronics for preparing portable devices

Critical Strain Region Evaluation of Self-Assembled Semiconductor Quantum Dots

A novel peak finding method to map the strain from high resolution transmission electron micrographs, known as the Peak Pairs method, has been applied to In(Ga) As/AlGaAs quantum dot (QD) samples, which present stacking faults emerging from the QD edges. Moreover, strain distribution has been simulated by the finite element method applying the elastic theory on a 3D QD model. The agreement existing between determined and simulated strain values reveals that these techniques are consistent enough to qualitatively characterize the strain distribution of nanostructured materials. The correct application of both methods allows the localization of critical strain zones in semiconductor QDs, predicting the nucleation of defects, and being a very useful tool for the design of semiconductor device

Longtime behavior of nonlocal Cahn-Hilliard equations

Here we consider the nonlocal Cahn-Hilliard equation with constant mobility in a bounded domain. We prove that the associated dynamical system has an exponential attractor, provided that the potential is regular. In order to do that a crucial step is showing the eventual boundedness of the order parameter uniformly with respect to the initial datum. This is obtained through an Alikakos-Moser type argument. We establish a similar result for the viscous nonlocal Cahn-Hilliard equation with singular (e.g., logarithmic) potential. In this case the validity of the so-called separation property is crucial. We also discuss the convergence of a solution to a single stationary state. The separation property in the nonviscous case is known to hold when the mobility degenerates at the pure phases in a proper way and the potential is of logarithmic type. Thus, the existence of an exponential attractor can be proven in this case as well