Layer-resolved imaging of domain wall interactions in magnetic tunnel junction-like trilayers

We have performed a layer-resolved, microscopic study of interactions between domain walls in two magnetic layers separated by a non-magnetic one, using high-resolution x-ray photoemission electron microscopy. Domain walls in the hard magnetic Co layer of a Co/Al2O3/FeNi trilayer with in-plane uniaxial anisotropy strongly modify the local magnetization direction in the soft magnetic FeNi layer. The stray fields associated to the domain walls lead to an antiparallel coupling between the local Co and FeNi moments. For domain walls parallel to the easy magnetization axis this interaction is limited to the domain wall region itself. For strongly charged (head-on or tail-to-tail) walls, the antiparallel coupling dominates the interaction over radial distances up to several micrometers from the centre of the domain wall.Comment: Published version, J. Phys.: Condens. Matter 19, 476204 (2007

Dependência do exchange-bias e da coercividade da espessura do Cu em IrMn/Cu/Co

30

High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes

Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below 10^{12} \unit{A/m^2}, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.Comment: Published version, Applied Physics Express 2, 023003 (2009) http://dx.doi.org/10.1143/APEX.2.02300

Influence of alkylphosphonic acid grafting on the electronic and magnetic properties of La2/3Sr1/3MnO3 surfaces

Self-assembled monolayers (SAMs) are highly promising materials for molecular engineering of electronic and spintronics devices thanks to their surface functionalization properties. In this direction, alkylphosphonic acids have been used to functionalize the most common ferromagnetic electrode in organic spintronics: La2/3Sr1/3MnO3 (LSMO). However, a study on the influence of SAMs grafting on LSMO electronic and magnetic properties is still missing. In this letter, we probe the influence of alkylphosphonic acids-based SAMs on the electronic and magnetic properties of the LSMO surface using different spectroscopies. We observe by X-ray photoemission and X-ray absorption that the grafting of the molecules on the LSMO surface induces a reduction of the Mn oxidation state. Ultraviolet photoelectron spectroscopy measurements also show that the LSMO work function can be modified by surface dipoles opening the door to both tune the charge and spin injection efficiencies in organic devices such as organic light-emitting diodes.The research leading to these results was financially supported by the EU project NMP3-SL-2011-263104 HINTS and ANR agency (MELAMIN 2011-NANO-021). S.T. acknowledges the European Union FP7 CIG Marie Curie Actions under project SAMSFERE (FP7/2012–321739) and the Spanish MICINN for his JdC contract. P.S. wishes to thank the Institut Universitaire de France for a junior Fellowship. The research leading to these results was partly funded by the SFB/TRR 88 ‘3MET’ from the DFG. Experiments were performed on the “DEIMOS” beamline at SOLEIL Synchrotron, France (project No. 20100960)

Unravelling the role of the interface for spin injection into organic semiconductors

Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.Comment: Original version. Revised version to appear in Nature Physics

Spintronique moléculaire (rôle des interfaces dans le transport du spin)

PARIS-BIUSJ-Biologie recherche (751052107) / SudocSudocFranceF

Transport dépendant du spin dans le graphène

Par delà ses applications largement distribuées pour le stockage de l information binaire, la spintronique vise le traitement Booléen de l information. Des dispositifs de logique de spin (spin-FETs et portes logiques de spin) sont envisagés en se basant sur la propagation et la manipulation de porteurs polarisés en spin injectés dans un canal latéral depuis un contact magnétique. En dépit de deux décennies de recherche active, l efficacité des dispositifs (notamment en termes de longueur de propagation du spin et d amplitude du signal de spin) est toujours limitée quand le canal latéral est un métal ou un semi-conducteur conventionnel : la mise en évidence d un medium adapté est nécessaire.Le transport dépendant du spin dans le graphène a été étudié dans le cadre de cette thèse. Dans un premier temps, l'impact et la structure de barrières tunnel de haute qualité déposées sur le graphène, nécessaires pour l'injection efficace de l'information de spin, ont été étudiés. A partir de ces résultats, des dispositifs complets d'injection, transport et détection de spin basés sur un feuillet de graphène épitaxié ainsi que sur une bicouche de graphène exfoliée ont alors été construits. Enfin, des mesures de transport du spin dans ces dispositifs ont été effectuées, puis analysées via les modèles classiques de drift/diffusion. Les forts signaux obtenus (gamme du M ), en validant l'existence d'un support capable de transporter le spin avec une très forte efficacité sur des distances macroscopiques (jusqu à 200 m), ouvrent la voie à une implémentation des concepts de traitement de l'information de spin.Beyond its widely distributed applications for binary data storage, spintronics aims Boolean information processing. Spin logic devices (spin-FETs and spin logic gates) are envisioned through the propagation and the manipulation of a spin-polarized carriers injected into a lateral channel from a magnetic contact. In spite of two decades of active research, the devices efficiency (in particular in terms of spin propagation length and spin signal amplitude) is still limited when the lateral channel is made of conventional metals or semiconductors: a suitable host still lacks. Spin-dependant transport in graphene is investigated in this thesis. At first, the impact of the growth and on the structure of high quality tunnel barriers deposited on graphene, required to obtain an efficient injection of the spin information, has been studied. From these results, complete devices for spins injection, transport and detection based on an epitaxial graphene sheet and also on an exfoliated bilayer graphene flake were built. Finally, measurements of spin transport in these devices were carried, and then analyzed through classical drift/diffusion models. The strong signals obtained (M range), by validating the existence of a substrate able to carry the spin information with a very large efficiency on macroscopic distances (up to 200 m), open the way for the implementation of spin processing concepts.PARIS11-SCD-Bib. électronique (914719901) / SudocSudocFranceF

Propriétés électromagnétiques de nanofils métalliques magnétiques orientés (effets non-réciproques)

L'objectif de cette thèse est d'étudier la possibilité d'utiliser des membranes chargées de nanofils métalliques magnétiques comme matériau non-réciproque dans des circulateurs hyperfréquence. Ces dispositifs utilisent très largement des ferrites polarisés par des aimants permanents, ce qui les rend coûteux et encombrants. Le remplacement de ces ferrites par des membranes de polymère irradié, chargées de nanofils métalliques magnétiques orientés, a déjà donné naissance à un dispositif présentant un effet non-réciproque sans polarisation externe, mais avec des pertes d'insertion de plus de 10 dB. La réduction des pertes d'insertion des dispositifs à membranes chargées de nanofils est recherchée. Dans le cadre de cette thèse, les propriétés du matériau utiles à la conception, à la simulation et à la réalisation de dispositifs non-réciproques sont étudiées. La contribution des différents facteurs de dissipation aux pertes d'insertion est évaluée, ce qui permet d'identifier les facteurs clés et de proposer des solutions réduisant les pertes conducteurs, les pertes magnétiques, et les pertes diélectriques par rapport au dispositif pré-existant. La pertinence de ces solutions est évaluée par les simulations et mesures de dispositifs. Enfin, de nouvelles technologies à explorer sont proposées pour la fabrication du diélectrique à nanofils magnétiques, elles permettraient d'appliquer conjointement les diverses solutions de réduction de pertes présentées dans cette thèse.Microwave devices mostly use ferrite circulators, which need an external magnetic bias. Cost and size of these circulators lead to study various materials in order to replace the ferrites. Among the candidates, irradiated polymer membranes, filled by oriented magnetic metallic nanowires, have already been used in an unbiased non-reciprocal device, which exhibits more than 10 dB insertion loss. Lower insertion loss is required to make efficient nanowired circulators. In this thesis, the nanowired membrane properties, useful for designing, modelling and making non-reciprocal devices, are studied. Contribution of the different loss factors can then be estimated, thus allowing to identify the key loss factor and then to propose solutions to reduce conductor loss, magnetic loss, and dielectric loss in new devices. Device modelling and measurement of these solutions are carried out. The performance improvement can then be quantified. Finally, new nanowired membrane technologies to be explored are suggested, as they could allow achieving the implementation of all the solutions into the same device.ORSAY-PARIS 11-BU Sciences (914712101) / SudocSudocFranceF

Exchange-bias e coercividade de bicamadas de IrMn/Co

07