Progress in Hot-Wire deposited nanocrystalline silicon solar cells

The tendency towards cost reduction in the photovoltaic industry has led to the development of the so-called thin film silicon technology. Among the different possible morphologies, a material that presents very promising features is nanocrystalline silicon (nc Si:H), which consists in an aggregate of crystallites with sizes in the order of few tens of nanometers embedded in an amorphous matrix. The deposition technique used at Universitat de Barcelona to grow nc-Si:H solar cells is Hot-Wire Chemical Vapour Deposition (HWCVD), which features several advantages in comparison with Plasma Enhanced CVD, the most widely used one in industry at the moment (higher deposition rates, simpler and cheaper deposition geometry and easier to scale to large area deposition).In order to grow a completely Hot-Wire deposited nanocrystalline silicon solar cell with enhanced efficiency, different strategies have been followed. First of all, the effects of the different deposition parameters, especially the tantalum filament temperature, have been studied aiming to the obtaining of compact material. Several modifications of the set-up have also been performed with the same finality. Material with good structural, electrical and transport properties has been obtained at low filament temperature (1600ºC). Secondly, the effects of the substrate nature on the microstructure of the nc-Si:H layers has been considered in the three possible cases (intrinsic, n-type and p-type doped layers). Later on, the performance of different p-i-n solar cells has been studied. Firstly, the effects of different preliminary light trapping strategies has been considered: the use of a textured front contact and of a back reflector. Finally, the relation existent between the microsctructure of the material and the performance and stability of the devices has been investigated. Different degradation mechanisms that affected our devices were detected and their possible causes identified (contact degradation, effects outside the p-i-n nc Si:H structure, active layer degradation). A best efficiency of 5.2% in a completely Hot-Wire deposited p-i-n solar cell has been achieved at low filament (1600ºC) and substrate (200ºC) temperatures and by using preliminary light trapping strategies. Stability of this device was verified after more than 1000 hours of light soaking. The preliminary character of this device makes it a very promising starting point to further increase the conversion efficiency of Hot-Wire deposited nanocrystalline silicon solar cells

Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour deposition

Hydrogenated amorphous and nanocrystalline silicon, deposited by catalytic chemical vapour deposition, have been doped during deposition by the addition of diborane and phosphine in the feed gas, with concentrations in the region of 1%. The crystalline fraction, dopant concentration and electrical properties of the films are studied. The nanocrystalline films exhibited a high doping efficiency, both for n and p doping, and electrical characteristics similar to those of plasma-deposited films. The doping efficiency of n-type amorphous silicon is similar to that obtained for plasma-deposited electronic-grade amorphous silicon, whereas p-type layers show a doping efficiency of one order of magnitude lower. A higher deposition temperature of 450°C was required to achieve p-type films with electrical characteristics similar to those of plasma-deposited films

Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD

In this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200 °C). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800 °C. A crystalline fraction of 50% was obtained for the sample deposited at 1700 °C. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtaining of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by plasma-enhanced CVD due to a higher hydrogen incorporation (13%)

Photovoltaic performance of an ultrasmall band gap polymer

A conjugated polymer (PBTTQ) that consists of alternating electron-rich bithiophene and electron-deficient thiadiazoloquinoxaline units was synthesized via Yamamoto polymerization with Ni(cod)(2) and provides a band gap of 0.94 eV. This represents one of the smallest band gaps obtained for a soluble conjugated polymer. When applied in a bulk heterojunction solar cell together with [84]PCBM as the electron acceptor, the polymer affords a response up to 1.3 mu m

Els Químics de la UB. Segon estudi: La veu de l'empresa

L’estudi del binomi formació-treball ha esdevingut un camp d’interès creixent en les últimes dècades. Ens ho confirma en primer lloc, el fet que són dos conceptes destinats a interaccionar al llarg del cicle vital, en la mesura que el progrés social depèn de la capacitat de l’educació, és a dir, dels sistemes formatius i dels recursos que l’acompanyen, de formar ciutadans i ciutadanes que donin resposta a un món laboral en continu canvi. D’altra banda, l’avaluació de la relació entre formació i treball és un element clau a l’hora de definir la qualitat dels sistemes de formació. La generalització dels processos d’avaluació i d’acreditació de la qualitat, i l’aplicació de nous sistemes de gestió de la qualitat en el marc del sistema universitari han configurat noves necessitats d’informació en aquest àmbit..

Aplicació de la carpeta d'aprenentatge a la Universitat

Podeu consultar la versió castellana a recurs relacionat.Aquest treball es nodreix de les experiències d'innovació i millora docent de disciplines tan dispars con Biologia,Farmàcia, Filologia, Infermeria, Pedagogia i Química, utilitzant la carpeta d'aprenentatge com a instrument de concreció

Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition

The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in nanocrystalline silicon deposited at 125 °C by Hot-Wire Chemical Vapour Deposition. The dependence of the subthreshold activation energy on gate bias for different gate bias stresses is quite different from the one reported for hydrogenated amorphous silicon. This behaviour has been related to trapped charge in the active layer of the thin film transistor

PEN as substrate for new solar cell technologies

The possible use of polyethylene naphthalate as substrate for low-temperature deposited solar cells has been studied in this paper. The transparency of this polymer makes it a candidate to be used in both substrate and superstrate configurations. ZnO:Al has been deposited at room temperature on top of PEN. The resulting structure PEN/ZnO:Al presented good optical and electrical properties. PEN has been successfully textured (nanometer and micrometer random roughness) using hot-embossing lithography. Reflector structures have been built depositing Ag and ZnO:Al on top of the stamped polymer. The deposition of these layers did not affect the final roughness of the whole. The reflector structure has been morphologically and optically analysed to verify its suitability to be used in solar cells

Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition

The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in nanocrystalline silicon deposited at 125°C by Hot-Wire Chemical Vapour Deposition. The dependence of the subthreshold activation energy on gate bias for different gate bias stresses is quite different from the one reported for hydrogenated amorphous silicon. This behaviour has been related to trapped charge in the active layer of the thin film transistor.Peer ReviewedPostprint (published version

Solutions of ionic liquids with diverse aliphatic and aromatic solutes – Phase behavior and potentials for applications:A review article

This article principally reviews our research related to liquid–liquid and solid–liquid phase behavior of imidazolium- and phosphonium-based ionic liquids, mainly having bistriflamide ([NTf2]−) or triflate ([OTf]−) anions, with several aliphatic and aromatic solutes (target molecules). The latter include: (i) diols and triols: 1,2-propanediol, 1,3-propanediol and glycerol; (ii) polymer poly(ethylene glycol) (PEG): average molecular mass 200, 400 and 2050 – PEG200 (liquid), PEG400 (liquid) and PEG2050 (solid), respectively; (iii) polar aromatic compounds: nicotine, aniline, phenolic acids (vanillic, ferulic and caffeic acid,), thymol and caffeine and (iv) non-polar aromatic compounds (benzene, toluene, p-xylene). In these studies, the effects of the cation and anion, cation alkyl chain and PEG chain lengths on the observed phase behaviors were scrutinized. Thus, one of the major observations is that the anion – bistriflamide/triflate – selection usually had strong, sometimes really remarkable effects on the solvent abilities of the studied ionic liquids. Namely, in the case of the hydrogen-bonding solutes, the ionic liquids with the triflate anion generally exhibited substantially higher solubility than those having the bistriflamide anion. Nevertheless, with the aromatic compounds the situation was the opposite – in most of the cases it was the bistriflamide anion that favoured solubility. Moreover, our other studies confirmed the ability of PEG to dissolve both polar and non-polar aromatic compounds. Therefore, two general possibilities of application of alternative, environmentally acceptable, solvents of tuneable solvent properties appeared. One is to use homogeneous mixtures of two ionic liquids having [NTf2]− and [OTf]− anions as mixed solvents. The other, however, envisages the application of homogeneous and heterogeneous (PEG + ionic liquid) solutions as tuneable solvents for aromatic solutes. Such mixed solvents have potential applications in separation of the aforesaid target molecules from their aqueous solutions or in extraction from original matrices. From the fundamental point of view the phase equilibrium studies reviewed herein and the diversity of the pure compounds – ionic liquids and target molecules – represent a good base for the discussion of interactions between the molecules that exist in the studied solutions