5,302 research outputs found
Direct observation and imaging of a spin-wave soliton with like symmetry
The prediction and realization of magnetic excitations driven by electrical
currents via the spin transfer torque effect, enables novel magnetic
nano-devices where spin-waves can be used to process and store information. The
functional control of such devices relies on understanding the properties of
non-linear spin-wave excitations. It has been demonstrated that spin waves can
show both an itinerant character, but also appear as localized solitons. So
far, it was assumed that localized solitons have essentially cylindrical,
like symmetry. Using a newly developed high-sensitivity time-resolved
magnetic x-ray microscopy, we instead observe the emergence of a novel
localized soliton excitation with a nodal line, i.e. with like symmetry.
Micromagnetic simulations identify the physical mechanism that controls the
transition from to like solitons. Our results suggest a potential new
pathway to design artificial atoms with tunable dynamical states using
nanoscale magnetic devices
Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor
We report the synthesis and evidence of graphene fluoride, a two-dimensional
wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits
hexagonal crystalline order and strongly insulating behavior with resistance
exceeding 10 G at room temperature. Electron transport in graphene
fluoride is well described by variable-range hopping in two dimensions due to
the presence of localized states in the band gap. Graphene obtained through the
reduction of graphene fluoride is highly conductive, exhibiting a resistivity
of less than 100 k at room temperature. Our approach provides a new
path to reversibly engineer the band structure and conductivity of graphene for
electronic and optical applications.Comment: 7 pages, 5 figures, revtex, to appear in PR
Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors
Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects
Social physique anxiety and physical activity in early adolescent girls : the influence of maturation and physical activity motives
This study considered the influence of maturation on social physique anxiety (SPA), the relationship between SPA and current and future physical activity (PA) levels and the influence of motives for physical activity on this relationship in early adolescent girls (n=162; mean age=11.80±0.33 years). Participants completed the Pubertal Development Scale, the modified Social Physique Anxiety Scale and the Motives for Physical Activity Scale at baseline and the Physical Activity Questionnaire for Older Children at baseline and 6 months later. The girls became less active across the 6 months and girls in the early stages of maturation had significantly lower SPA than the girls in the middle and late stages of maturation. SPA was not related to current or future physical activity in the sample as a whole. Cluster analysis identified four groups with different motive profiles and the High Appearance and Fitness group demonstrated a moderate negative relationship between SPA and PA at phase 1, whereas the other groups did not. These findings indicate that SPA may increase with maturation and the relationship between SPA and PA is dependent on reasons for being active. For girls who are motivated to be active primarily by body-related reasons SPA is likely to lead to lower levels of PA
Dynamic Scaling of Ion-Sputtered Surfaces
We derive a stochastic nonlinear equation to describe the evolution and
scaling properties of surfaces eroded by ion bombardment. The coefficients
appearing in the equation can be calculated explicitly in terms of the physical
parameters characterizing the sputtering process. We find that transitions may
take place between various scaling behaviors when experimental parameters such
as the angle of incidence of the incoming ions or their average penetration
depth, are varied.Comment: 13 pages, Revtex, 2 figure
\u3ci\u3eIn-Situ\u3c/i\u3e Raman Scattering Studies of Alkali-Doped Single Wall Carbon Nanotubes
Electrochemical doping and in-situ Raman scattering were used to study charge transfer in K- and Li-doped single wall carbon nanotubes (SWNT) as a function of alkali concentration. An 8 cm-1 downshift was observed for the tangential phonon mode of SWNT doped to stoichiometries of KC24 and Li1.25C6. The shift in both systems is reversible upon de-doping despite an irreversible loss of crystallinity. These results indicate that the tangential mode shifts result from electron transfer from alkali dopants to the SWNT, and that these modes are only weakly affected by long-range order within the ropes
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