Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, supersaturations, diffusion lengths and the tilt angle. Growth experiments are carried out on the GaAs(211)A and GaAs(111)B substrates. It is found that 20° inclined NWs are two times longer in average, which is explained by a larger impingement rate on their sidewalls. We find that the effective diffusion length at 550°C amounts to 12 nm for the surface adatoms and is more than 5,000 nm for the sidewall adatoms. Supersaturations of surface and sidewall adatoms are also estimated. The obtained results show the importance of sidewall adatoms in the MBE growth of NWs, neglected in a number of earlier studies

Nonlinear electron transport in normally pinched-off quantum wire

Nonlinear electron transport in normally pinched-off quantum wires was studied. The wires were fabricated from AlGaAs/GaAs heterostructures with high-mobility two-dimensional electron gas by electron beam lithography and following wet etching. At certain critical source-drain voltage the samples exhibited a step rise of the conductance. The differential conductance of the open wires was noticeably lower than e^2/h as far as only part of the source-drain voltage dropped between source contact and saddle-point of the potential relief along the wire. The latter limited the electron flow injected to the wire. At high enough source-drain voltages the decrease of the differential conductance due to the real space transfer of electrons from the wire in GaAs to the doped AlGaAs layer was found. In this regime the sign of differential magnetoconductance was changed with reversing the direction of the current in the wire or the magnetic field, whet the magnetic field lies in the heterostructure plane and is directed perpendicular to the current. The dependence of the differential conductance on the magnetic field and its direction indicated that the real space transfer events were mainly mediated by the interface scattering.Comment: LaTeX 2e (epl.cls) 6 pages, 3 figure

Classical diamagnetism, magnetic interaction energies, and repulsive forces in magnetized plasmas

The Bohr-van Leeuwen theorem is often summarized as saying that there is no classical magnetic susceptibility, in particular no diamagnetism. This is seriously misleading. The theorem assumes position dependent interactions but this is not required by classical physics. Since the work of Darwin in 1920 it has been known that the magnetism due to classical charged point particles can only be described by allowing velocity dependent interactions in the Lagrangian. Legendre transformation to an approximate Hamiltonian can give an estimate of the Darwin diamagnetism for a system of charged point particles. Comparison with experiment, however, requires knowledge of the number of classically behaving electrons in the sample. A new repulsive effective many-body force, which should be relevant in plasmas, is predicted by the Hamiltonian.Comment: added references, revise

Indication for the coexistence of closed orbit and quantum interferometer with the same cross section in the organic metal (ET)4(H3O)[Fe(C2O4)3].C6H4Cl2: Persistence of SdH oscillations above 30 K

Shubnikov-de Haas (SdH) and de Haas-van Alphen (dHvA) oscillations spectra of the quasi-two dimensional charge transfer salt $\beta$"-(ET)$_4$(H$_3$O)[Fe(C$_2$O$_4$)$_3$]$\cdot$C$_6$H$_4$Cl$_2$ have been investigated in pulsed magnetic fields up to 54 T. The data reveal three basic frequencies F$_a$, F$_b$ and F$_{b - a}$, which can be interpreted on the basis of three compensated closed orbits at low temperature. However a very weak thermal damping of the Fourier component F$_b$, with the highest amplitude, is evidenced for SdH spectra above about 6 K. As a result, magnetoresistance oscillations are observed at temperatures higher than 30 K. This feature, which is not observed for dHvA oscillations, is in line with quantum interference, pointing to a Fermi surface reconstruction in this compound.Comment: published in Eur. Phys. J. B 71 203 (2009

GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon

The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templates for the scalable integration of nanowire networks on III-V substrates. Here, we demonstrate how GaAs nanoscale membranes can be seamlessly integrated on silicon by controlling the density of nuclei in the initial stages of growth. We also correlate the absence or presence of defects with the existence of a single or multiple nucleation regime for the single membranes. Certain defects exhibit well-differentiated spectroscopic features that we identify with cathodoluminescence and micro-photoluminescence techniques. Overall, this work presents a new approach for the seamless integration of compound semiconductors on silicon

Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states

The results of experimental and theoretical studies of zero-bias anomaly (ZBA) in the Pb-oxide-n-InAs tunnel structures in magnetic field up to 6T are presented. A specific feature of the structures is a coexistence of the 2D and 3D states at the Fermi energy near the semiconductor surface. The dependence of the measured ZBA amplitude on the strength and orientation of the applied magnetic field is in agreement with the proposed theoretical model. According to this model, electrons tunnel into 2D states, and move diffusively in the 2D layer, whereas the main contribution to the screening comes from 3D electrons.Comment: 8 double-column pages, REVTeX, 9 eps figures embedded with epsf, published versio

Parametric localized modes in quadratic nonlinear photonic structures

We analyze two-color spatially localized modes formed by parametrically coupled fundamental and second-harmonic fields excited at quadratic (or chi-2) nonlinear interfaces embedded into a linear layered structure --- a quasi-one-dimensional quadratic nonlinear photonic crystal. For a periodic lattice of nonlinear interfaces, we derive an effective discrete model for the amplitudes of the fundamental and second-harmonic waves at the interfaces (the so-called discrete chi-2 equations), and find, numerically and analytically, the spatially localized solutions --- discrete gap solitons. For a single nonlinear interface in a linear superlattice, we study the properties of two-color localized modes, and describe both similarities and differences with quadratic solitons in homogeneous media.Comment: 9 pages, 8 figure