Characterisation of CMOS APS Technologies for Space Applications

In recent years, the performance of scientific CMOS active pixel sensors has been improved to the point that it is now approaching that of the current silicon sensor of choice, CCDs. For some applications, CMOS APSs is believed to present significant advantages over CCDs, such as improved radiation hardness. In this work, the effect of radiation damage on a ‘baseline’ commercial APS, e2v technologies’ Jade APS, is characterised in response to gamma, proton and heavy ion irradiation. Specific performance problems encountered during this radiation characterisation, such as dark current non-uniformity under gamma irradiation, random telegraph signals under proton irradiation, and single event effects under heavy ion irradiation are described and analyzed. The X-ray spectroscopic imaging performance of the device is measured and compared to the Ocean Colour Imager APS test array showing progress towards a high frame rate spectroscopic X-ray imager for space science. The implications of these results for using similar devices in space applications are considered. Furthermore, possible novel techniques for measuring inter-pixel responsivity non-uniformity, heavy ion detection and spectroscopy, and measuring the dynamics of radiation-induced trap formation are discussed

Importance of charge capture in interphase regions during readout of charge-coupled devices

The current understanding of charge transfer dynamics in charge-coupled devices (CCDs) is that charge is moved so quickly from one phase to the next in a clocking sequence and with a density so low that trapping of charge in the interphase regions is negligible. However, simulation capabilities developed at the Centre for Electronic Imaging, which includes direct input of electron density simulations, have made it possible to investigate this assumption further. As part of the radiation testing campaign of the Euclid CCD273 devices, data have been obtained using the trap pumping method, a method that can be used to identify and characterize single defects within CCDs. Combining these data with simulations, we find that trapping during the transfer of charge among phases is indeed necessary to explain the results of the data analysis. This result could influence not only trap pumping theory and how trap pumping should be performed but also how a radiation-damaged CCD is readout in the most optimal way

Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

The displacement damage hardness that can be achieved using p-channel charge-coupled devices (CCD) was originally demonstrated in 1997, and since then a number of other studies have demonstrated an improved tolerance to radiation-induced CTI when compared to n-channel CCDs. A number of recent studies have also shown that the temperature history of the device after the irradiation impacts the performance of the detector, linked to the mobility of defects at different temperatures. This study describes the initial results from an e2v technologies p-channel CCD204 irradiated at 153 K with a 10 MeV equivalent proton fluences of 1.24×109 and 1.24×1011 protons cm-2. The dark current, cosmetic quality and the number of defects identified using trap pumping immediately were monitored after the irradiation for a period of 150 hours with the device held at 153 K and then after different periods of time at room temperature. The device also exhibited a flatband voltage shift of around 30 mV / krad, determined by the reduction in full well capacity

Gamma radiation damage study of 0.18 µm process CMOS image sensors

A 0.18 µm process CMOS image sensor has recently been developed by e2v technologies plc. with a 0.5 megapixel imaging area consisting of 6 x 6 µm 5T pixels. The sensor is able to provide high performance in a diverse range of applications including machine vision and medical imaging, offering good low-light performance at a video rate of up to 60 fps. The CMOS sensor has desirable characteristics which make it appealing for a number of space applications. Following on from previous tests of the radiation hardness of the image sensors to proton radiation, in which the increase in dark-current and appearance of bright and RTS pixels was quantified, the sensors have now been subjected to a dose of gamma radiation. Knowledge of the performance after irradiation is important to judge suitability for space applications and radiation sensitive medical imaging applications. This knowledge will also enable image correction to mitigate the effects and allow for future CMOS devices to be designed to improve upon the findings in this paper. One device was irradiated to destruction after 120 krad(Si) while biased, and four other devices were irradiated between 5 and 20 krad(Si) while biased. This paper explores the resulting radiation damage effects on the CMOS image sensor such as increased dark current, and a central brightening effect, and discusses the implications for use of the sensor in space applications

A global shutter CMOS image sensor for hyperspectral imaging

Hyperspectral imaging has been providing vital information on the Earth landscape in response to the changing environment, land use and natural phenomena. While conventional hyperspectral imaging instruments have typically used rows of linescan CCDs, CMOS image sensors (CIS) have been slowly penetrating space instrumentation for the past decade, and Earth observation (EO) is no exception. CIS provide distinct advantages over CCDs that are relevant to EO hyperspectral imaging. The lack of charge transfer through the array allows the reduction of cross talk usually present in CCDs due to imperfect charge transfer efficiency, and random pixel addressing makes variable integration time possible, and thus improves the camera sensitivity and dynamic range. We have developed a 10T pixel design that integrates a pinned photodiode with global shutter and in-pixel correlated double sampling (CDS) to increase the signal to noise ratio in less intense spectral regimes, allowing for both high resolution and low noise hyperspectral imaging for EO. This paper details the characterization of a test device, providing baseline performance measurements of the array such as noise, responsivity, dark current and global shutter efficiency, and also discussing benchmark hyperspectral imaging requirements such as dynamic range, pixel crosstalk, and image lag

Multi-level parallel clocking of CCDs for: improving charge transfer efficiency, clearing persistence, clocked anti-blooming, and generating low-noise backgrounds for pumping

A multi-level clocking scheme has been developed to improve the parallel CTE of four-phase CCDs by suppressing the effects of traps located in the transport channel under barrier phases by inverting one of these phases throughout the transfer sequence. In parallel it was apparent that persistence following optical overload in Euclid VIS detectors would lead to undesirable signal released in subsequent rows and frames and that a suitable scheme for flushing this signal would be required. With care, the negatively biased electrodes during the multi-level transfer sequence can be made to pin the entire surface, row-by-row, and annihilate the problematic charges. This process can also be extended for use during integration to significantly reduce the unusable area of the detector, as per the clocked anti-blooming techniques developed many years ago; however, with the four-phase electrodes architecture of modern CCDs, we can take precautionary measures to avoid the problem of charge pumping and clock induced charge within the science frames. Clock induced charge is not all bad! We also propose the use of on-orbit trap-pumping for Euclid VIS to provide calibration input to ground based correction algorithms and as such a uniform, low noise background is require. Clock induced charge can be manipulated to provide a very suitable, low signal and noise background to the imaging array. Here we describe and present results of multi-level parallel clocking schemes for use in four-phase CCDs that could improve performance of high precision astronomy applications such as Euclid VIS

Assessment of the performance and radiation damage effects under cryogenic temperatures of a P-channel CCD204s

CCDs continue to be the detector of choice for high resolution and high performance space applications. One perceived drawback is their susceptibility to radiation damage, in particular the formation of trap sites leading to a decrease in charge transfer efficiency. To that end, ESA has started a programme to investigate a new generation of devices based upon p-channel technology. The expectation is that once mature, p-channel devices may offer a significant increase in tolerance to proton radiation over traditional n-type buried channel CCDs. Early studies of e2v devices to assess the radiation hardness of p-channel devices were limited by the quality of devices available, however more recently, good quality p-channel CCD204s have been manufactured and studied. A more detailed evaluation of p-channel CCDs is now underway to realise the full potential of the technology for use in future high radiation environment space missions. A key aspect is the development of a cryogenic test rig that will allow for the first time a direct comparison of the radiation damage effects when the irradiation is performed both traditionally unbiased at room temperature and cryogenically with the device operational. Subsequent characterisations will also be performed on the cryogenic device after periods of storage at room temperature to investigate the potential annealing effects upon the lattice damage. Here we describe and present early results from an extensive programme of testing which will address all key performance parameters for p-channel CCDs, such as full electro-optical characterisation, assessment of radiation hardness and investigation of trap species

Activation of Slo2.1 channels by niflumic acid

Slo2.1 channels conduct an outwardly rectifying K+ current when activated by high [Na+]i. Here, we show that gating of these channels can also be activated by fenamates such as niflumic acid (NFA), even in the absence of intracellular Na+. In Xenopus oocytes injected with <10 ng cRNA, heterologously expressed human Slo2.1 current was negligible, but rapidly activated by extracellular application of NFA (EC50 = 2.1 mM) or flufenamic acid (EC50 = 1.4 mM). Slo2.1 channels activated by 1 mM NFA exhibited weak voltage dependence. In high [K+]e, the conductance–voltage (G-V) relationship had a V1/2 of +95 mV and an effective valence, z, of 0.48 e. Higher concentrations of NFA shifted V1/2 to more negative potentials (EC50 = 2.1 mM) and increased the minimum value of G/Gmax (EC50 = 2.4 mM); at 6 mM NFA, Slo2.1 channel activation was voltage independent. In contrast, V1/2 of the G-V relationship was shifted to more positive potentials when [K+]e was elevated from 1 to 300 mM (EC50 = 21.2 mM). The slope conductance measured at the reversal potential exhibited the same [K+]e dependency (EC50 = 23.5 mM). Conductance was also [Na+]e dependent. Outward currents were reduced when Na+ was replaced with choline or mannitol, but unaffected by substitution with Rb+ or Li+. Neutralization of charged residues in the S1–S4 domains did not appreciably alter the voltage dependence of Slo2.1 activation. Thus, the weak voltage dependence of Slo2.1 channel activation is independent of charged residues in the S1–S4 segments. In contrast, mutation of R190 located in the adjacent S4–S5 linker to a neutral (Ala or Gln) or acidic (Glu) residue induced constitutive channel activity that was reduced by high [K+]e. Collectively, these findings indicate that Slo2.1 channel gating is modulated by [K+]e and [Na+]e, and that NFA uncouples channel activation from its modulation by transmembrane voltage and intracellular Na+

Algal biomass and diesel emulsions: An alternative approach for utilizing the energy content of microalgal biomass in diesel engines

The use of algal biomass for the production of sustainable biofuels has attracted significant interest due to the fast reproduction rates and high lipid content of many microalgal species. However, existing methods of extracting algal cellular lipids are complex and expensive, with regards to both energy input and economic costs. This work explores an alternative method of utilizing the energy content of microalgae through the preparation of wet algal biomass slurry/fossil diesel emulsions containing up to 6.6% wt/wt algae biomass, using a specific surfactant combination, for direct injection diesel engine combustion of microalgae without prior biomass drying or lipid extraction. A high lipid containing green microalgae, Chlorella sorokiniana, was used to produce algal biomass for the study. The preparation of wet algal slurry/diesel emulsions from algae grown under standard conditions, and also those under conditions intended to increase cellular lipid content or growth rates was investigated, and in all cases a surfactant pack of Span80, CTAB and butanol was found to produce a stable emulsion. A correlation between the engine work produced during combustion of the emulsions in a modern direct injection compression ignition and the lower heating value of the wet slurry emulsions was found, with no evidence of individual algae cells persisting to the engine exhaust. Engine exhaust emissions of nitrogen oxides (NOx) and particulate matter were lower for all of the wet algal slurry/diesel emulsions relative to a reference fossil diesel tested under similar conditions, while in the case of the emulsion prepared from algal biomass to which a flocculating agent had been added, emissions of carbon monoxide (CO) were found to increase significantly