208 research outputs found

    Degradation and breakdown characteristics of thin MgO dielectric layers

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    MgO has been suggested as a possible high-k dielectric for future complementary metal-oxide semiconductor processes. In this work, the time dependent dielectric breakdown (TDDB) characteristics of 20 nm MgO films are discussed. Stress induced leakage current measurements indicate that the low measured Weibull slopes of the TDDB distributions for both n-type and p-type devices cannot be attributed to a lower trap generation rate than for SiO2. This suggests that much fewer defects are required to trigger breakdown in MgO under voltage stress than is the case for SiO2 or other metal-oxide dielectrics. This in turn explains the progressive nature of the breakdown in these films which is observed both in this work and elsewhere. The reason fewer defects are required is attributed to the morphology of the films

    Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells

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    In this letter, we explore the influence of the Cu(x)Te(1-x) layer composition (0.2 0.7 leads to large reset power, similar to pure-Cu electrodes, x < 0.3 results in volatile forming properties. The intermediate range 0.5< x < 0.7 shows optimum memory properties, featuring improved control of filament programming using <5 mu A as well as state stability at 85 degrees C. The composition-dependent programming control and filament stability are closely associated with the phases in the Cu(x)Te(1-x) layer and are explained as related to the chemical affinity between Cu and Te. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3621835

    Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability

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    Random telegraph noise (RTN) is an important intrinsic phenomenon of any logic or memory device that is indicative of the reliability and stochastic variability in its performance. In the context of the resistive random access memory (RRAM), RTN becomes a key criterion that determines the read disturb immunity and memory window between the low (LRS) and high resistance states (HRS). With the drive towards ultra-low power memory (low reset current) and aggressive scaling to 10 × 10 nm2 area, contribution of RTN is significantly enhanced by every trap (vacancy) in the dielectric. The underlying mechanisms governing RTN in RRAM are yet to be fully understood. In this study, we aim to decode the role of conductance fluctuations caused by oxygen vacancy transport and inelastic electron trapping and detrapping processes. The influence of resistance state (LRS, shallow and deep HRS), reset depth and reset stop voltage (VRESET-STOP) on the conductance variability is also investigated. © 2013 IEEE

    RTN in GexSe1-x OTS Selector Devices

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    Random telegraph noise (RTN) signals in GexSe1-x ovonic threshold switching (OTS) selector have been analyzed in this work, both before and after the first-fire (FF) operation and at on- and off-states. It is observed that RTN appears after the FF, and its absolute amplitude at the off-state is small and negligible in comparison with the RTN signals in RRAM devices. At the on-state, large RTN signals are observed, which can either partially or fully block the conduction path, supporting that a conductive filament is formed or activated by FF and then modulated during switching. Statistical analysis reveals that the relative RTN amplitude at on-state in GexSe1-x OTS selector is smaller than or equivalent to those in RRAM devices

    Measurement and simulation of the neutron response of the Nordball liquid scintillator array

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    The response of the liquid scintillator array Nordball to neutrons in the energy range 1.5 < T_n < 10 MeV has been measured by time of flight using a 252Cf fission source. Fission fragments were detected by means of a thin-film plastic scintillator. The measured differential and integral neutron detection efficiencies agree well with predictions of a Monte Carlo simulation of the detector which models geometry accurately and incorporates the measured, non-linear proton light output as a function of energy. The ability of the model to provide systematic corrections to photoneutron cross sections, measured by Nordball at low energy, is tested in a measurement of the two-body deuteron photodisintegration cross section in the range E_gamma=14-18 MeV. After correction the present 2H(gamma,n)p measurements agree well with a published evaluation of the large body of 2H(gamma,p)n data.Comment: 20 pages 10 figures, submitted Nucl. Instr. Meth.

    Stochastic computing based on volatile GeSe ovonic threshold switching selectors

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    Stochastic computing (SC) is a special type of digital compute strategy where values are represented by the probability of 1 and 0 in stochastic bit streams, which leads to superior hardware simplicity and error-tolerance. In this paper, we propose and demonstrate SC with GeSe based Ovonic Threshold Switching (OTS) selector devices by exploiting their probabilistic switching behavior. The stochastic bit streams generated by OTS are demonstrated with good computation accuracy in both multiplication operation and image processing circuit. Moreover, the bit distribution has been statistically studied and linked to the collective defect de/localization behavior in the chalcogenide material. Weibull distribution of the delay time supports the origin of such probabilistic switching, facilitates further optimization of the operation condition, and lays the foundation for device modelling and circuit design. Considering its other advantages such as simple structure, fast speed, and volatile nature, OTS is a promising material for implementing SC in a wide range of novel applications, such as image processors, neural networks, control systems and reliability analysis

    Collaboration opportunities in advanced housing renovation

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    AbstractIn theory, there is huge potential for reducing the energy consumed by existing single-family houses by thoroughly renovating them. For the successful market development of highly energy-efficient integrated renovations, supply chain collaboration is very important, while at the same time customer demand for integrated renovations has to be stimulated. A research and networking methodology was developed within the framework of the One Stop Shop project to identify and develop collaboration opportunities for advanced housing renovation in Belgium, Denmark, Finland and Norway. The research identified key supply-side needs through interviews and questionnaires, and analysed important elements for the development of a web-based portal that can connect supply and demand. The project further developed ideas and methods for collaboration and business model generation between different players on the renovation market. These different research results contributed to defining new business opportunities related to process innovation to unburden the homeowner and to achieve less fragmented renovation processes

    Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution

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    An extensive investigation of the pre-existing and generated defects in amorphous-Si/TiO2 based non-filamentary (a-VMCO) RRAM device has been carried out in this work to identify the switching and degradation mechanisms, through a combination of random-telegraph-noise (RTN) and constant- voltage-stress (CVS) analysis. The amplitude of RTN, which leads to read instability, is also evaluated statistically at different stages of cell degradation and correlated with different defects, for the first time. It is found that the switching between low and high resistance states (LRS and HRS) are correlated with the profile modulation of pre-existing defects in the ‘defect-less’ region near the a-Si/TiO2 interface. The RTN amplitude observed at this stage is small and has a tight distribution. At longer stress times, a percolation path is formed due to defects generation, which introduces larger RTN amplitude and a significant tail in its distribution

    A computational analysis of lower bounds for big bucket production planning problems

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    In this paper, we analyze a variety of approaches to obtain lower bounds for multi-level production planning problems with big bucket capacities, i.e., problems in which multiple items compete for the same resources. We give an extensive survey of both known and new methods, and also establish relationships between some of these methods that, to our knowledge, have not been presented before. As will be highlighted, understanding the substructures of difficult problems provide crucial insights on why these problems are hard to solve, and this is addressed by a thorough analysis in the paper. We conclude with computational results on a variety of widely used test sets, and a discussion of future research

    Treatment patterns and clinical outcomes

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    BACKGROUND: Treatment resistant depression (TRD) characterizes a subgroup of 10-30% of patients with major depressive disorder, and is associated with considerable morbidity and mortality. A consensus treatment for TRD does not exist, which often leads to wide variations in treatment strategies. Real-world studies on treatment patterns and outcomes in TRD patients in Europe are lacking and could help elucidate current treatment strategies and their efficacy. METHODS: This non-interventional cohort study of patients with TRD (defined as treatment failure on ≥2 oral antidepressants given at adequate dose and duration) with moderate to severe depression collected real-world data on treatment patterns and outcomes in several European countries. Patients were started on a new treatment for depression according to routine clinical practice. RESULTS: Among 411 patients enrolled, after 6 months, only 16.7% achieved remission and 73.5% showed no response. At Month 12, while 19.2% achieved remission and 69.2% showed no response, 33.3% of those in remission at Month 6 were no longer in remission. Pharmacological treatments employed were heterogenous; 54 different drugs were recorded at baseline, and the top 5 treatment types according to drug classes accounted for 40.0% of patients. Even though remission rates were very low, at Month 12, 60.0% of patients had not changed treatment since enrolment. CONCLUSIONS: The heterogeneity of treatments highlights a lack of consensus. Moreover, despite low response rates, patients often remained on treatments for substantial periods of time. These data further support existence of an unmet treatment need for TRD patients in Europe.publishersversionpublishe
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