Elastic and quasi-elastic pppp and γ⋆p\gamma^\star p scattering in the Dipole Model

We have in earlier papers presented an extension of Mueller's dipole cascade model, which includes sub-leading effects from energy conservation and running coupling as well as colour suppressed saturation effects from pomeron loops via a ``dipole swing''. The model was applied to describe the total and diffractive cross sections in $pp$ and $\gamma^*p$ collisions, and also the elastic cross section in $pp$ scattering. In this paper we extend the model to describe the corresponding quasi-elastic cross sections in $\gamma^*p$, namely the exclusive production of vector mesons and deeply virtual compton scattering. Also for these reactions we find a good agrement with measured cross sections. In addition we obtain a reasonable description of the $t$-dependence of the elastic $pp$ and quasi-elastic $\gamma^\star p$ cross sections

Electronic Spin Transport in Dual-Gated Bilayer Graphene

The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices fabricated in a new device architecture which allows us to make a comparative study by separately investigating the roles of substrate and polymer residues on spin relaxation. First, the comparison between spin valves fabricated on SiO2 and BN substrates suggests that substrate-related charged impurities, phonons and roughness do not limit the spin transport in current devices. Next, the observation of a 5-fold enhancement in spin relaxation time in the encapsulated device highlights the significance of polymer residues on spin relaxation. We observe a spin relaxation length of ~ 10 um in the encapsulated bilayer with a charge mobility of 24000 cm2/Vs. The carrier density dependence of spin relaxation time has two distinct regimes; n<4 x 1012 cm-2, where spin relaxation time decreases monotonically as carrier concentration increases, and n>4 x 1012 cm-2, where spin relaxation time exhibits a sudden increase. The sudden increase in the spin relaxation time with no corresponding signature in the charge transport suggests the presence of a magnetic resonance close to the charge neutrality point. We also demonstrate, for the first time, spin transport across bipolar p-n junctions in our dual-gated device architecture that fully integrates a sequence of encapsulated regions in its design. At low temperatures, strong suppression of the spin signal was observed while a transport gap was induced, which is interpreted as a novel manifestation of impedance mismatch within the spin channel

Next-to-leading and resummed BFKL evolution with saturation boundary

We investigate the effects of the saturation boundary on small-x evolution at the next-to-leading order accuracy and beyond. We demonstrate that the instabilities of the next-to-leading order BFKL evolution are not cured by the presence of the nonlinear saturation effects, and a resummation of the higher order corrections is therefore needed for the nonlinear evolution. The renormalization group improved resummed equation in the presence of the saturation boundary is investigated, and the corresponding saturation scale is extracted. A significant reduction of the saturation scale is found, and we observe that the onset of the saturation corrections is delayed to higher rapidities. This seems to be related to the characteristic feature of the resummed splitting function which at moderately small values of x possesses a minimum.Comment: 34 page

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron spin. While graphene is very promising for spin communication due to its extraordinary electron mobility, the lack of a band gap restricts its prospects for semiconducting spin devices such as spin diodes and bipolar spin transistors. The recent emergence of 2D semiconductors could help overcome this basic challenge. In this letter we report the first important step towards making 2D semiconductor spin devices. We have fabricated a spin valve based on ultra-thin (5 nm) semiconducting black phosphorus (bP), and established fundamental spin properties of this spin channel material which supports all electrical spin injection, transport, precession and detection up to room temperature (RT). Inserting a few layers of boron nitride between the ferromagnetic electrodes and bP alleviates the notorious conductivity mismatch problem and allows efficient electrical spin injection into an n-type bP. In the non-local spin valve geometry we measure Hanle spin precession and observe spin relaxation times as high as 4 ns, with spin relaxation lengths exceeding 6 um. Our experimental results are in a very good agreement with first-principles calculations and demonstrate that Elliott-Yafet spin relaxation mechanism is dominant. We also demonstrate that spin transport in ultra-thin bP depends strongly on the charge carrier concentration, and can be manipulated by the electric field effect

Spin Relaxation in Single Layer Graphene with Tunable Mobility

Graphene is an attractive material for spintronics due to theoretical predictions of long spin lifetimes arising from low spin-orbit and hyperfine couplings. In experiments, however, spin lifetimes in single layer graphene (SLG) measured via Hanle effects are much shorter than expected theoretically. Thus, the origin of spin relaxation in SLG is a major issue for graphene spintronics. Despite extensive theoretical and experimental work addressing this question, there is still little clarity on the microscopic origin of spin relaxation. By using organic ligand-bound nanoparticles as charge reservoirs to tune mobility between 2700 and 12000 cm2/Vs, we successfully isolate the effect of charged impurity scattering on spin relaxation in SLG. Our results demonstrate that while charged impurities can greatly affect mobility, the spin lifetimes are not affected by charged impurity scattering.Comment: 13 pages, 5 figure

Strongly anisotropic spin relaxation in graphene/transition metal dichalcogenide heterostructures at room temperature

Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using magnetic correlations or large spin-orbit coupling (SOC) induced by proximity effects. In particular, a dramatic SOC enhancement has been predicted when interfacing graphene with a semiconducting transition metal dechalcogenide, such as tungsten disulphide (WS$_2$). Signatures of such an enhancement have recently been reported but the nature of the spin relaxation in these systems remains unknown. Here, we unambiguously demonstrate anisotropic spin dynamics in bilayer heterostructures comprising graphene and WS$_2$. By using out-of-plane spin precession, we show that the spin lifetime is largest when the spins point out of the graphene plane. Moreover, we observe that the spin lifetime varies over one order of magnitude depending on the spin orientation, indicating that the strong spin-valley coupling in WS$_2$ is imprinted in the bilayer and felt by the propagating spins. These findings provide a rich platform to explore coupled spin-valley phenomena and offer novel spin manipulation strategies based on spin relaxation anisotropy in two-dimensional materials

Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature

We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi- and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10$\mu$m combined with carrier mobilities exceeding 20,000 cm$^2$/Vs.Comment: 15 pages, 5 figure

Odderon in baryon-baryon scattering from the AdS/CFT correspondence

Based on the AdS/CFT correspondence, we present a holographic description of various C-odd exchanges in high energy baryon-baryon and baryon-antibaryon scattering, and calculate their respective contributions to the difference in the total cross sections. We predict that, due to the warp factor of AdS_5, the total cross section in pp collisions is larger than in p\bar{p} collisions at asymptotically high energies.Comment: 23 pages, v2: minor changes, to be published in JHE

Energy dependence of the saturation scale and the charged multiplicity in pp and AA collisions

A natural framework to understand the energy dependence of bulk observables from lower energy experiments to the LHC is provided by the Color Glass Condensate, which leads to a "geometrical scaling" in terms of an energy dependent saturation scale Q_s. The measured charged multiplicity, however, seems to grow faster (~\sqrt{s}^0.3) in nucleus-nucleus collisions than it does for protons (~\sqrt{s}^0.2), violating the expectation from geometric scaling. We argue that this difference between pp and AA collisions can be understood from the effect of DGLAP evolution on the value of the saturation scale, and is consistent with gluon saturation observations at HERA.Comment: RevTeX, 8 pages, 4 figures. V2: modified discussion of fragmentation, published in EPJ