Nonlocal Edge State Transport in Topological Insulators

We use the N-terminal scheme for studying the edge state transportin in two-dimensional topological insulators. We find the universal nonlocal response in the ballistic transport approach. This macroscopic exhibition of the topological order offers different areas for applications.Comment: Updated to published versio

Topological phase states of the SU(3) QCD

We consider the topologically nontrivial phase states and the corresponding topological defects in the SU(3) d-dimensional quantum chromodynamics (QCD). The homotopy groups for topological classes of such defects are calculated explicitly. We have shown that the three nontrivial groups are pi_3 SU(3)=Z, pi_5 SU(3)=Z, and pi_6 SU(3)=Z_6 if 3 < d < 6. The latter result means that we are dealing exactly with six topologically different phase states. The topological invariants for d=3,5,6 are described in detail.Comment: LATEX2e, 5 page

Universal properties of materials with Dirac dispersion relation of low-energy excitations

The N-terminal scheme is considered for studying the contribution of edge states to the response of a two-dimensional topological insulator. A universal distribution of the nonlocal resistance between terminals is determined in the ballistic transport approach. The calculated responses are identical to experimentally observed values. The spectral properties of surface electronic states in Weyl semimetals are also studied. The density of surface states is accurately determined. The universal behavior of these characteristics is a distinctive feature of the considered Dirac materials which can be used in practical applications

Electron-phonon coupling in topological surface states: The role of polar optical modes

The use of topological edge states for spintronic applications could be severely hampered by limited lifetimes due to intrinsic many-body interactions, in particular electron-phonon coupling. Previous works to determine the intrinsic coupling strength did not provide a coherent answer. Here, the electron-phonon interaction in the metallic surface state of 3D topological insulators is revised within a first principles framework. For the archetypical cases of Bi2Se3 and Bi2Te3, we find an overall weak coupling constant of less than 0.15, but with a characteristic energy dependence. Derived electronic self-energies compare favorably with previous angle-resolved photoemission spectroscopy results. The prevailing coupling is carried by optical modes of polar character, which is weakly screened by the metallic surface state and can be reduced by doping into bulk bands. We do not find any indication of a strong coupling to the A1g mode or the presence of a Kohn anomaly in the surface phonon spectrum. The weak intrinsic electron-phonon coupling guarantees long-lived quasiparticles at elevated temperatures

Ideal two-dimensional electron systems with a giant Rashba-type spin splitting in real materials: surfaces of bismuth tellurohalides

Spintronics is aimed at active controlling and manipulating the spin degrees of freedom in semiconductor devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction (SOI) in a two-dimensional (2D) electron system immersed in an inversion-asymmetric environment. The SOI induced spin-splitting of the 2D-electron state provides a basis for many theoretically proposed spintronic devices. However, the lack of semiconductors with large Rashba effect hinders realization of these devices in actual practice. Here we report on a giant Rashba-type spin splitting in 2D electron systems which reside at tellurium-terminated surfaces of bismuth tellurohalides. Among these semiconductors, BiTeCl stands out for its isotropic metallic surface-state band with the Gamma-point energy lying deep inside the bulk band gap. The giant spin-splitting of this band ensures a substantial spin asymmetry of the inelastic mean free path of quasiparticles with different spin orientations.Comment: 12 pages, 5 figure

Modification of a Shockley-Type Surface State on Pt(111) upon Deposition of Gold Thin Layers

We present a first-principles fully-relativistic study of surface and interface states in the n one monolayer (ML) Au/Pt(111) heterostructures. The modification of an unoccupied s - p -type surface state existing on a Pt(111) surface at the surface Brillouin zone center upon deposition of a few atomic Au layers is investigated. In particular, we find that the transformation process of such a surface state upon variation of the Au adlayer thickness crucially depends on the nature of the relevant quantum state in the adsorbate. When the Au adlayer consists of one or two monolayers and this relevant state has energy above the Pt(111) surface state position, the latter shifts downward upon approaching the Au adlayer. As a result, in the 1 ML Au/Pt(111) and 2 ML Au/Pt(111) heterostructures at the equilibrium adlayer position, the Pt-derived surface state experiences strong hybridization with the bulk electronic states and becomes a strong occupied resonance. In contrast, when the number n of atomic layers in the Au films increases to three or more, the Pt(111) surface state shifts upward upon reduction of the distance between the Pt(111) surface and the Au adlayer. At equilibrium, the Pt-derived surface state transforms into an unoccupied quantum-well state of the Au adlayer. This change is explained by the fact that the relevant electronic state in free-standing Au films with n ≥ 3 has lower energy in comparison to the Pt(111) surface state.3.9003.2017/$\Pi$220 or 3.9003.2017/9.10 Ministry of Education and Science of the Russian Federation Project No. 15.61.202.2015 Saint Petersburg State University IT-756-13 Euskal Herriko Unibertsitatea FIS2016-76617-P and FIS2016-75862-P Spanish Ministry of Economy, Industry and Competitiveness MINEIC

Electron–phonon coupling and superconductivity in a 2D Tl–Pb compound on Si(111)

[EN] Electron-phonon interaction in a single-layer Tl-Pb compound on Si(111) is investigated within the density-functional theory and linear-response approach in the mixed-basis pseudopotential representation. It is found that phonon-induced scattering of electrons at the Fermi level is primarily determined by surface electronic states responsible for bonding at the interface and by low-energy, predominantly shear-vertical vibrations of adatoms. The contribution of substrate-localized vibrations involved in the electron-phonon scattering turns out to be small. We have also estimated the superconducting transition temperature T-c by solving the linearized gap equation of the Eliashberg theory. An analysis of phonon-mediated transitions for a number of electronic states in the Tl-Pb surface bands showed that the strength of the coupling varies with the binding energy, increasing as it approaches the Fermi level, and significantly depends on the surface band to which the state belongs.This work was supported by the University of the Basque Country (Grants no. GIC07-IT-366-07 and No. IT-756-13) and the Spanish Ministry of Science and Innovation (Grant no. FIS2016-75862-P). The authors acknowledge support by the state of Baden-Wurttemberg through bwHPC