Sb2Se3 Thin Film Growth by Solution Atomic Layer Deposition

We establish solution atomic layer deposition sALD for the controlled growth of pure Sb2Se3 thin films under mild conditions, namely, room temperature and atmospheric pressure. Upscaling this process yields Sb2Se3 thin films with high homogeneity over large area 4 amp; 8243; substrates. Annealing of the initially amorphous material leads to highly crystalline and smooth Sb2Se3 thin films. Removing the constraints of thermal stability and sufficient volatility in sALD compared to traditional gas phase ALD opens up a broad choice of precursors and allows us to examine a wide range of Se2 precursors, of which some exhibit facile synthetic routes and allow us to tune their reactivity for optimal experimental ease of use. Moreover, we demonstrate that the solvent used in sALD represents an additional, attractive tool to influence and tailor the reactivity at the liquid solid interface between the precursors and the surfac

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically examined, including electronics and optoelectonics, electrocatalysis and photocatalysis, energy storage, lubrication, plasmonics, solar cells, and photonics. This review focuses on understanding the interplay between ALD precursors and deposition conditions, the resulting film characteristics such as thickness, crystallinity, and morphology, and ultimately device performance. Through rational choice of precursors and conditions, ALD is observed to exhibit potential to meet the varying requirements of widely different applications. Beyond the current state of ALD TMDCs, the future prospects, opportunities, and challenges in different applications are discussed. The authors hope that the review aids in bringing together experts in the fields of ALD, TMDCs, and various applications to eventually realize industrial applications of ALD TMDCs.Peer reviewe

Růst tenkých vrstev Sb2Se3 depozicí atomárních vrstev v roztoku

We establish solution atomic layer deposition (sALD) for the controlled growth of pure Sb2Se3 thin films under mild conditions, namely, room temperature and atmospheric pressure. Upscaling this process yields Sb2Se3 thin films with high homogeneity over large-area (4 '') substrates. Annealing of the initially amorphous material leads to highly crystalline and smooth Sb2Se3 thin films. Removing the constraints of thermal stability and sufficient volatility in sALD compared to traditional gas-phase ALD opens up a broad choice of precursors and allows us to examine a wide range of Se2- precursors, of which some exhibit facile synthetic routes and allow us to tune their reactivity for optimal experimental ease of use. Moreover, we demonstrate that the solvent used in sALD represents an additional, attractive tool to influence and tailor the reactivity at the liquid-solid interface between the precursors and the surface.Je popsán řízený růst čistých tenkých vrstev Sb2Se3 za mírných podmínek, tj. při laboratorní teplotě a atmosférickém tlaku, metodou depozice atomárních vrstev v roztoku (sALD). Procesu poskytuje vysoce homogenní tenké filmy Sb2Se3 na velkoplošných (4'') substrátech. Použité rozpouštědlo v sALD se jeví jako účinný nástroj pro ovlivnění a přizpůsobení reaktivity na rozhraní kapalina-pevná látka mezi prekurzory a povrchem