Haldane gap in the quasi one-dimensional nonlinear σ\sigma-model

This work studies the appearance of a Haldane gap in quasi one-dimensional antiferromagnets in the long wavelength limit, via the nonlinear $\sigma$-model. The mapping from the three-dimensional, integer spin Heisenberg model to the nonlinear $\sigma$-model is explained, taking into account two antiferromagnetic couplings: one along the chain axis ($J$) and one along the perpendicular planes ($J_\bot$) of a cubic lattice. An implicit equation for the Haldane gap is derived, as a function of temperature and coupling ratio $J_\bot/J$. Solutions to these equations show the existence of a critical coupling ratio beyond which a gap exists only above a transition temperature $T_N$. The cut-off dependence of these results is discussed.Comment: 14 pages (RevTeX 3.0), 3 PostScript figures appended (printing instructions included

3M_BANTOR: A regression framework for multitask and multisession brain network distance metrics

AbstractBrain network analyses have exploded in recent years and hold great potential in helping us understand normal and abnormal brain function. Network science approaches have facilitated these analyses and our understanding of how the brain is structurally and functionally organized. However, the development of statistical methods that allow relating this organization to phenotypic traits has lagged behind. Our previous work developed a novel analytic framework to assess the relationship between brain network architecture and phenotypic differences while controlling for confounding variables. More specifically, this innovative regression framework related distances (or similarities) between brain network features from a single task to functions of absolute differences in continuous covariates and indicators of difference for categorical variables. Here we extend that work to the multitask and multisession context to allow for multiple brain networks per individual. We explore several similarity metrics for comparing distances between connection matrices and adapt several standard methods for estimation and inference within our framework: standard F test, F test with scan-level effects (SLE), and our proposed mixed model for multitask (and multisession) BrAin NeTwOrk Regression (3M_BANTOR). A novel strategy is implemented to simulate symmetric positive-definite (SPD) connection matrices, allowing for the testing of metrics on the Riemannian manifold. Via simulation studies, we assess all approaches for estimation and inference while comparing them with existing multivariate distance matrix regression (MDMR) methods. We then illustrate the utility of our framework by analyzing the relationship between fluid intelligence and brain network distances in Human Connectome Project (HCP) data

Desilication of highly siliceous zeolite ZSM-5 with NaOH and NaOH/tetrabutylamine hydroxide

The results of both chemical and XPS analysis pointed out that desilication of highly siliceous ZSM-5 of Si/Al = 164 was more effective in the surface zone than in the bulk, contrary to zeolite ZSM-5 of Si/Al = 31.6. According to the IR studies in parent zeolite the concentration of protonic sites was very close to the concentration of Al indicating that all Al atoms can form Si-OH-Al. The results of our quantitative IR studies strongly support the realumination thesis, i.e. some Al atoms extracted in basic solutions are subsequently reinserted forming new acidic hydroxyls. In desilicated zeolites all Al atoms were able to form protonic sites, however part of them dehydroxylated during the activation of zeolite producing Lewis acid sites according to the stoichiometry: one protonic site was transformed into one Lewis site. Low temperature nitrogen adsorption revealed that the alkaline treatment of highly siliceous zeolite with 0.2 M NaOH/TBAOH mixture produced mesopores of smaller diameter and narrower pore size distribution than in the case of zeolite of medium Si/Al ratio. This result can be explained by low concentration of Al which similarly as TBA(+) cations plays the role of pore directing agents (PDA). Contrary to TEA(+), the presence of Al in desilication mixture, led to the formation of larger pores. Therefore, in highly siliceous zeolite TBA(+) played dominant role as PDA producing narrower pores. Highly siliceous zeolite with uniform distribution of relatively narrow pores may be useful catalyst or catalyst support. The influence of desilication temperature on porosity development was also investigated. The increase of desilication temperature from 338 to 353 K resulted in both more extensive demetalation (more Si and Al is extracted) and the distinct increase of the volume and surface of mesopores. Both lower concentration of protonic sites and higher concentration of Lewis sites confirmed partial zeolite destruction upon desilication at elevated temperature. The experiments of pivalonitrile sorption followed by IR spectroscopy showed a significant increase of accessibility of acid sites to bulky pivalonitrile molecules. (C) 2012 Elsevier Inc. All rights reserved.The research was partially carried out with the equipment purchased thanks to the financial support of the European Regional Development Fund in the framework of the Polish Innovation Economy Operational Program (Contract No. POIG.02.01.00-12-023/08).Sadowska, K.; Góra-Marek, K.; Drozdek, M.; Kustrowski, P.; Datka, J.; Martínez-Triguero, J.; Rey Garcia, F. (2013). Desilication of highly siliceous zeolite ZSM-5 with NaOH and NaOH/tetrabutylamine hydroxide. Microporous and Mesoporous Materials. 168:195-205. https://doi.org/10.1016/j.micromeso.2012.09.033S19520516

Improved THETA-1 for light olefins oligomerization to diesel: Influence of textural and acidic properties

The increase in diesel demand, especially in Europe, and the need for high fuel quality requirements are forcing refiners to move into additional processes for production of high cetane diesel in order to meet the present market trends. Oligomerization of light olefins into middle distillate range products is a viable option. The fuel produced through this technology is environmentally friendly, free of sulfur and aromatics, and the adequate choice of the heterogeneous catalyst will direct the selectivity towards low branched oligomers, which will result in a high quality product. In this work we show the benefits of combining basic desilication treatments for generation of additional mesoporosity in mono-directional Theta-1 zeolite, with selective acid dealumination steps that restore not only the microporosity to values close to those of the parent samples, but also the total and strong Bronsted acidity. These modified Theta-1 zeolites present an outstanding catalytic behavior for oligomerization of propene, with a largely increased initial activity, a much higher resistance to deactivation with time on stream, and an improved selectivity to products in the diesel fraction, as compared to the original microporous Theta-1.The authors thank BP Products of North America for their financial support and permission to publish this work, and Consolider Ingenio 2010-Multicat, the "Severo Ochoa Program", and MAT2012-31657 for financial support. R. Sanchis is acknowledged for technical support.Martínez, C.; Doskocil, EJ.; Corma Canós, A. (2014). Improved THETA-1 for light olefins oligomerization to diesel: Influence of textural and acidic properties. Topics in Catalysis. 57(6-9):668-682. https://doi.org/10.1007/s11244-013-0224-xS668682576-9Bellussi G, Mizia F, Calemma V, Pollesel P, Millini R (2012) Microporous Mesoporous Mater 164:127–134Bellussi G, Carati A, Millini R (2010) In: Cejka J, Corma A, Zones S (eds) Zeolites and Catalysis. Wiley-VCH Verlag GmbH & Co., Weinheim, pp 449–491Martinez C, Corma A (2011) Coord Chem Rev 255:1558–1580de Klerk A (2005) Ind Eng Chem Res 44:3887–3893de Klerk A (2006) Energy Fuels 20:439–445de Klerk A (2006) Energy Fuels 20:1799–1805Egloff G (1936) Ind Eng Chem Res 28:1461–1467Degnan TF Jr, Smith CM, Venkat CR (2001) Appl Catal A Gen 221:283–294Apelian MR, Boulton JR, Fung AS (1994) US5284989, to Mobil OilQuann RJ, Green LA, Tabak SA, Krambeck FJ (1988) Ind Eng Chem Res 27:565–570Tabak SA, Krambeck FJ, Garwood WE (1986) AIChE J 32:1526–1531Corma A, Martínez C, Doskocil EJ (2013) J Catal 300:183–196Martens JA, Ravishankar R, Mishin IE, Jacobs PE (2000) Angew Chem Int Ed Engl 39:4376–4379Martens JA, Verrelst WH, Mathys GM, Brown SH, Jacobs PA (2005) Angew Chem Int Ed Engl 117(5833–583):6Pater JPG, Jacobs PA, Martens JA (1998) J Catal 179:477–482Tabak SA (1981) US4254295, to Mobil OilOccelli ML, Hsu JT, Galya LG (1985) J Mol Catal A: Chem 32:377–390Tabak SA (1984) US4504693, to Mobil Oil CorpKholer E, Schmidt F, Wernicke HJ, Pontes MD, Roberts HL (1995, Summer) Hydrocarbon Technology InternationalMartens JA, Verduijn JP (1995) WO95/19945, to Exxon Chemical Patents Inc.Verrelst WH (1995) Martens LRM, WO95/22516, to Exxon Chemical Patents Inc.Verrelst WH, Martens LRM (2000) US6143942, to Exxon Chemical Patents Inc.Verrelst WH, Martens LRM, Verduijn JP (2006) US6013851, to Exxon Chemical Patents Inc.Dakka JM, Mathys GMK, Puttemans MPH (2003) WO03/035583 to Exxon-Mobil Chemical LimitedMatias P, Sa CC, Graca I, Lopes JM, Carvalho AP, Ramoa RF, Guisnet M (2011) Appl Catal A 399:100–109Chal R, Gérardin C, Bulut M, van Donk S (2011) ChemCatChem 3:67–81Perez-Ramirez J, Christensen CH, Egeblad K, Groen JC (2008) Chem Soc Rev 37:2530–2542Verboekend D, Perez-Ramirez J (2011) Catal Sci Technol 1:879–890Serrano DP, Escola JM, Pizarro P (2013) Chem Soc Rev 42:4004–4035Verboekend D, Chabaneix AM, Thomas K, Gilson JP, Perez-Ramirez J (2011) Cryst Eng Comm 13:3408–3416Emeis CA (1993) J Catal 141:347–354Perego C, Peratello S (1999) Catal Today 52:133–145Abello S, Bonilla A, Perez-Ramirez J (2009) Appl Catal A Gen 364:191–198Corma A, Martinez C, Doskocil EJ, Yaluris G (2011) WO2011002631A2, to BP Oil International Limited. BP Corporation North America Inc., UKCorma A, Martinez C, Doskocil EJ, Yaluris G (2011) WO2011002630A2, to BP Oil International Limited. BP Corporation North America Inc, UKHan S, Heck RH, DiGuiseppi FT (1993) US5234875, to Mobil Oil CorporationPeratello S, Molinari M, Bellussi G, Perego C (1999) Catal Today 52:271–27

Scientific, sustainability and regulatory challenges of cultured meat

Producing meat without the drawbacks of conventional animal agriculture would greatly contribute to future food and nutrition security. This Review Article covers biological, technological, regulatory and consumer acceptance challenges in this developing field of biotechnology. Cellular agriculture is an emerging branch of biotechnology that aims to address issues associated with the environmental impact, animal welfare and sustainability challenges of conventional animal farming for meat production. Cultured meat can be produced by applying current cell culture practices and biomanufacturing methods and utilizing mammalian cell lines and cell and gene therapy products to generate tissue or nutritional proteins for human consumption. However, significant improvements and modifications are needed for the process to be cost efficient and robust enough to be brought to production at scale for food supply. Here, we review the scientific and social challenges in transforming cultured meat into a viable commercial option, covering aspects from cell selection and medium optimization to biomaterials, tissue engineering, regulation and consumer acceptance

Wet and Dry Etching of LiGaO2 and LiAIO2 Time (mm)

ABSTRACT LiGaO2 and LiAIO2 have similar lattice constants to GaN, and may prove useful as substrates for Ill-nitride epitaxy. We have found that these materials may be wet chemically etched in some acid solutions, including HF, at rates between 150 and 40,000 A/mm. Dry etching with 5F6/Ar plasmas provides faster rates than Cl2/Ar or CH4/H2IAr under electron cyclotron resonance conditions, indicating the fluoride etch products are more volatile that their chloride or metallorganic/hydride counterparts. GaN and related alloys are generally grown on (0001) Al203 substrates in spite of the large lattice mismatch (---14% for GaN), due to the lack of commercially available bulk single-crystal nitrides. The Al203 is relatively inexpensive, available in large diameters, stable at the nitride growth temperatures, and simple to clean. Growth of AIGaN/InGaN heterostructures on A1203 has led to the high brightness light-emitting diodes5 and lasers6 reported by Nakamura et a!. Alternative substrates that have been employed include SiC (3.1% lattice mismatch to GaN for the 6H polytype), which is attractive because it is cleavable and available in doped form, but is expensive and difficult to clean,7-12 MgAI2O4 which has a 10% mismatch with GaN and is cleavable,13'14 ZnO, MgO, Si, and Ill-V materials such as GaAs and InP. 'I Thick GaN layers grown by vapor-phase epitaxy on Al203 substrates have been employed as templates for GaN homoepitaxy by removing the A1203, 15 and the first report on growth on small bulk GaN crystals recently appeared.16 The high dissociation pressure of nitrogen (15 kbar) at the growth temperature (1600°C) makes bulk GaN crystals difficult to produce on a large scale.1718 Two promising substrates for nitride epitaxy are the wurtzite crystals LiGaO2 and LiAlO2, which have a-axis mismatches of +0.19 and -1.45%, respectively, to GaN. These are grown by the Czochralski technique in diameters currently up to 1.5 in., and have bandgaps of 6.5 (LiAlO2) and 5.6 eV (LiGaO2). Both were Growth on patterned substrates, or creation of through-wafer via holes for microwave power electronics, requires that etching processes be developed for both materials. In this letter we report several wet etch solutions for LiGaO2 and LiAIO2, and compare three different dry etch chemistries in terms of rate, surface morphology, and anisotropy. The polished faces of both materials were patterned either with AZ5209E photoresist or a carbon-based mask in a resolution test array with feature sizes from 0.5 to 200 m. Dry etching was performed in a Plasma Therrm SLR 770 system utilizing an Astex 4400 electron cyclotron resonance (ECR) source operating at 2.45 GHz and at powers up to 1000 W. The Si carrier wafer was mechanically clamped to a He back side cooled, radio-frequency (RF) powered chuck. The process pressure was varied from 1 to 20 mTorr, but was held at 1.5 mTorr for most runs. Three different plasma chemistries, Cl2/Ar, CH4/H2/Ar, and SF6/Ar, were investigated since they enable us to determine which of the typical types of etch products (i.e., chlorides, metallorganic/hydride, or fluoride, respectively) are most volatile for the oxide substrates. Etch rates were determined by stylus profilometry after removal of the mask materials and surface morphology was examined by scanning electron microscopy and atomic force microscopy. and dissociation of the etch products. The exception was HF, which for both materials was found to have a square root dependence of etch depth on solution immersion time, and whose rate was a strong function of agitation. The morphology of the etched surface was also considerably rougher than those obtained with the other solutions. These are all hallmarks of diffusion-controlled etching, where the rate is controlled by diffusion of the reactant to the gallate or aluminate surface. This is a less attractive situation for reproducible etch processing because it is more difficult to achieve the same degree of agitation in a mixture than to control its temperature, which is the key parameter in reaction-limited etching. A scanning electron microscopic (SEM) micrograph of features etched into LiGaO2 with HF is shown at the top of The dependence of LiGaO2 and LiAlO2 etch rate on microwave power at fixed pressure (1 .5 mTorr) and RF power (250 W) is shown in In conclusion, we have found that lithium gallate and lithium aluminate bulk wafers can be wet chemically etched in many common acid solutions with rates ranging from 150 to 40,000 A/mm. Chlorine, fluorine, and methane-hydrogen plasma chemistries can all be employed for dry etching of both materials, with SF6/Ar providing the fastest rates for similar plasma parameters. These processes should prove useful for patterning LiGaO2 and LiAIO2 substrates prior to growth of GaN and related alloys