Electron trapping in amorphous Al2O3

The electron trapping in MOS capacitors with amorphous Al2O3 as an insulating layer was studied through pulsed capacitance-voltage technique. A positive shift of the voltage value corresponding to a constant capacitance (VC) was observed. The dependences of the voltage instability with the applied bias and the charging time were investigated. Two different contributions could be distinguished: a hysteresis phenomenon observed on each measurement cycle, and a permanent accumulated VC-shift to which each measurement cycle contributes. A physical model based on tunneling transitions between the substrate and defects within the oxide was implemented. From the fitting procedure within the energy range covered in our measurements (1.7-2.7 eV below the conduction band edge), the trap density was found to decrease exponentially with trap energy depth from 3.0 × 1020 cm-3eV-1 to 9.6 × 1018 cm-3eV-1, with a uniform spatial distribution within the first 2 nm from the semiconductor interface for the hysteresis traps.Fil: Sambuco Salomone, Lucas Ignacio. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Física. Laboratorio de Física de Dispositivos Microelectrónica; ArgentinaFil: Campabadal, F.. Instituto de Microelectronica de Barcelona; EspañaFil: Faigon, Adrián Néstor. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Física. Laboratorio de Física de Dispositivos Microelectrónica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long". Universidad de Buenos Aires. Facultad de Ingeniería. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long"; Argentin

SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes

Acord transformatiu CRUE-CSICThis work was supported by the Spanish Ministry of Science, Innovation, and Universities through projects TEC2017-84321-C4-1-R and TEC2017-84321-C4-4-R.This paper reports the use of the Quasi-static Memdiode Model (QMM) for simulating Complementary Resistive Switching (CRS) devices. CRS arises from the anti-serial connection of two memristors and it is used for generating low and high-resistance regions in the I-V characteristic with the aim of mitigating the sneak-path conduction problem in crossbar arrays. Here, the use of the QMM for CRS in the form of a six terminal subcircuit is explored. While two terminals of the subcircuit correspond to the conventional input and output pins of the CRS structure, the rest provide information about the voltage at the central node, the low-voltage conductance of each device, and the low-voltage conductance of the whole structure. Special attention is paid to the simulation of the so-called table with legs hysteresis loop (resistance at fixed bias vs. write voltage), which is often invoked in connection with devices that exhibit switching activity at the two interfaces of a single dielectric layer. Because of the internal potential drop distribution, the switching process takes place alternately at one side of the structure or the other giving rise to a pseudo-CRS behavior. The flexibility of the proposed approach is demonstrated through a series of fitting exercises that involve experimental data reported in the literature. The model script for the SPICE simulator is also provided

Parameter extraction techniques for the analysis and modeling of resistive memories

A revision of the different numerical techniques employed to extract resistive switching (RS) and modeling parameters is presented. The set and reset voltages, commonly used for variability estimation, are calculated for different resistive memory technologies. The methodologies to extract the series resistance and the parameters linked to the charge-flux memristive modeling approach are also described. It is found that the obtained cycle-to-cycle (C2C) variability depends on the numerical technique used. This result is important, and it implies that when analyzing C2C variability, the extraction technique should be described to perform fair comparisons between different resistive memory technologies. In addition to the use of extensive experimental data for different types of resistive memories, we have also included kinetic Monte Carlo (kMC) simulations to study the formation and rupture events of the percolation paths that constitute the conductive filaments (CF) that allow resistive switching operation in filamentary unipolar and bipolar devices.Consejería de Conocimiento, Investigaci ́on y Universidad, Junta de Andalucía (Spain) and the FEDER program for the projects A.TIC.117.UGR18, B-TIC-624-UGR20 and IE2017-5414Ramón y Cajal grant No. RYC2020-030150-IFunding for open access charge: Universidad de Granada/CBU

Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

We acknowledge grants PID2022-139586NB-C42, PID2022-139586NB-C43, PID2022-139586NB-C44 funded by MICIU/AEI/10.13039/501100011033 and FEDER, UE. IMB authors thank the CSIC funding through project 20225AT012 and the Generalitat de Catalunya- AGAUR for project 2021 SGR 00497. M.B.G. acknowledges the grant RYC2020-030150-I funded by MICIU/AEI/10.13039/501100011033 and by “ESF Investing in your future”.The dependence of the current in TiN/Ti/HfO2/W devices on the temperature is investigated in the range from 78 K to 340 K. Resistive switching cycles at 78 K are conducted to explore the thermal dependence in filament configurations with different intermediate resistance states. The less conductive states show an increase of the current as the temperature rises, while the fully formed filament displays a metallic-like behavior. A comprehensive model, based on the Stanford Model including a series resistance, is proposed and successfully validated by experimental data. The interplay between the ohmic and non-linear components in the model for different filament states is analyzed, emphasizing the dominance of the non-linear component (and its corresponding thermal dependence) in partially formed filaments and the prevalence of the ohmic component in the fully formed filament, which shows a decreasing current as the temperature rises. A complete compact model for simulation of circuits including the thermal dependence of these devices is developed.MICIU/AEI/10.13039/501100011033: PID2022-139586NB-C42, PID2022-139586NB-C43, PID2022-139586NB-C44, RYC2020-030150-IFEDER, UECSIC 20225AT012Generalitat de Catalunya- AGAUR 2021 SGR 00497“ESF Investing in your future

Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation

MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. The main trend of the results shows that the nanolaminates stack presents the highest levels of hysteresis and stretch-out of the C-V curves, suggesting that interface layers between dielectrics could play a relevant role in the study of the radiation response.Fil: Quinteros, C. P.. Comisión Nacional de Energía Atómica; ArgentinaFil: Sambuco Salomone, Lucas Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires; ArgentinaFil: Redin, Eduardo Gabriel. Universidad de Buenos Aires; ArgentinaFil: Rafí, J. M.. Consejo Superior de Investigaciones Científicas; EspañaFil: Zabala, M.. Consejo Superior de Investigaciones Científicas; EspañaFil: Faigón, A.. Universidad de Buenos Aires; ArgentinaFil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Campabadal, F.. Consejo Superior de Investigaciones Científicas; Españ

Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective

Acknowledgments The authors thank the support of the Spanish Ministry of Science, Innovation and Universities and the FEDER program through projects TEC2017-84321-C4-1-R, TEC2017-84321-C4-3-R, and projects A.TIC.117.UGR18, IE2017-5414 and B.TIC.624.UGR20 funded by the Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain) and the FEDER program. Funding for open access charge: Universidad de Granada/CBUAWe have analyzed variability in resistive memories (Resistive Random Access Memories, RRAMs) making use of advanced numerical techniques to process experimental measurements and simulations based on the kinetic Monte Carlo technique. The devices employed in the study were fabricated using the TiN/Ti/HfO2/W stack. The switching parameters were obtained making use of new developed extraction methods. The appropriateness of the advanced parameter extraction methodologies has been checked by comparison to kinetic Monte Carlo simulations; in particular, the reset and set events have been studied and detected. The data obtained were employed to shed light on the resistive switching operation and the cycle-to-cycle variability. It has been shown that variability depends on the numerical technique employed to obtain the set and reset voltages, therefore, this issue must be taken into consideration in RS characterization and modeling studies. The proposed techniques are complementary and depending on the technology and the curves shape the features of a particular method could make it to be the most appropriate.Spanish Ministry of Science, Innovation and Universities and the FEDER program through projects TEC2017-84321-C4-1-R, TEC2017-84321-C4-3-RConsejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain) and the FEDER program, projects A.TIC.117.UGR18, IE2017-5414 and B.TIC.624.UGR20Funding for open access charge: Universidad de Granada/CBU

Assessing the correlation between location and size of catastrophic breakdown events in high-K MIM capacitors

The connection between the spatial location of catastrophic breakdown spots occurring in metal-insulator-metal capacitors with a high-permittivity dielectric film (HfO 2 ) and their respective sizes is investigated. Large area structures (10 4 -10 5 μm 2 ) are used for this correlation assessment since, for statistical considerations, a large number of spots in the same device is imperatively required. The application of ramped or constant voltage stress across the capacitor generates defects inside the dielectric that result in the formation of multiple failure sites. High power dissipation takes place locally, leaving a permanent mark on the top electrode of the device. The set of marks constitutes a point pattern with attributes that can be analyzed from a statistical viewpoint. The correlation between the spot locations and their sizes is assessed through the mark correlation function and the method of reverse conditional moments. The study reveals that for severely damaged devices, there exists a link between the spot location and size that leads to a short range departure from a complete spatial randomness (CSR) process. It is shown that the affected region around each failure site is actually larger than the visible area of the spot. A structural modification of the dielectric layer in the vicinity of the spot caused by the huge thermal effects occurring just before the microexplosion might be the reason behind this extension of the damage

Standards for the Characterization of Endurance in Resistive Switching Devices

Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products

Expected Performance of the ATLAS Experiment - Detector, Trigger and Physics

A detailed study is presented of the expected performance of the ATLAS detector. The reconstruction of tracks, leptons, photons, missing energy and jets is investigated, together with the performance of b-tagging and the trigger. The physics potential for a variety of interesting physics processes, within the Standard Model and beyond, is examined. The study comprises a series of notes based on simulations of the detector and physics processes, with particular emphasis given to the data expected from the first years of operation of the LHC at CERN