628 research outputs found

    Innovations and Experiments in Uses of Health Manpower—The Effect of Licensure Laws

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    Time-resolved optical spin orientation is employed to study spin dynamics of I * and I-1* excitons bound to isoelectronic centers in bulk ZnO. It is found that spin orientation at the exciton ground state can be generated using resonant excitation via a higher lying exciton state located at about 4 meV from the ground state. Based on the performed rate equation analysis of the measured spin dynamics, characteristic times of subsequent hole, electron, and direct exciton spin flips in the exciton ground state are determined as being tau(s)(h) = 0.4 ns, tau(s)(e) greater than= 15 ns, and tau(s)(eh) greater than= 15 ns, respectively. This relatively slow spin relaxation of the isoelectronic bound excitons is attributed to combined effects of (i) weak e-h exchange interaction, (ii) restriction of the exciton movement due to its binding at the isoelectronic center, and (iii) suppressed spin-orbit coupling for the tightly bound hole

    Electron dynamics in InNxSb1–x

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    Electron transport properties in InNxSb1–x are investigated for a range of alloy compositions. The band structure of InNxSb1–x is modeled using a modified k·p Hamiltonian. This enables the semiconductor statistics for a given x value to be calculated from the dispersion relation of the E– subband. These calculations reveal that for alloy compositions in the range 0.001<=x<=0.02 there is only a small variation of the carrier concentration at a given plasma frequency. A similar trend is observed for the effective mass at the Fermi level. Measurements of the plasma frequency and plasmon lifetime for InNxSb1–x alloys enable the carrier concentration and the effective mass at the Fermi level to be determined and a lower limit for the electron mobility to be estimated

    Efficiency of public administration and economic growth in Russia : empirical analysis

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    This article presents the results of multivariate correlations between regional governance system performance indicators and key indicators of socio-economic territorial development based on modern economic and mathematical tools. The representation of the socioeconomic system of the region as a space of key variables of socio-economic territorial development and regional authorities’ performance indicators allows the use of canonical correlation analysis tools. The analysis is performed on the indicators calculated for the regions of the Russian Federation for the period of 2008-2010. As a result, weak correlation was found between subject-object variables of meso-level economic systems. A visible correlation in two sets is observed between economic territory development and indicators of executive authorities’ performance such as the average monthly wage of civil servants of executive authorities of the Russian Federation constituent entities, tax and non-tax share of municipalities budget income in total municipalities budget income and the number of employees in the executive branch of the constituent entities of the Russian Federation. The lack of correlation between performance indicators of regional governance systems and socio-economic territorial development requires a revision of the existing formal approach to this evaluation.peer-reviewe

    Carcass composition and meat characteristic of male and female rabbits

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    A study was carried out on the yield, carcass composition and characteristics of meat of 11 male and 11 female rabbits. For 77 days the rabbits were kept under identical conditions and were fed with compound feed containing 18% crude protein. An average pre-slaughter live weight of the males of 2,462 +/- (0,15)g and 2,472+/-(0,17)g of the females was achieved during the fattening period. The average participation of the clean carcass with and without the head compared to the live mass before slaughtering was 55.76+/-(0,22)% and 50.77+/-(0,20)% for the males, and 55.92+/-(0.24)% and 51.52+/-(0.19)% for the females. Compared to the mass of the clean carcass with head on of the female rabbits the pelvic-thing part participated with 30.67%, the flank part with 29.04%, the forelegs with 21.94% and the neck-breast part with 18.35%. The participation of the parts from male rabbit was as follows: the pelvic-thigh part 30.52%, the flank part 28.52%, the forelegs 21.88% and the neck-breast part 19.08%. The participation of the muscle tissue in the mass of the clean carcass without the head was 76.45+/-(2.18)% for the males and 75.70+/-(2.17)% for the females

    Preparation and characterization of Bi26–2xMn2xMo10O69-d and Bi26.4Mn0.6Mo10–2yMe2yO69-d(Me = V, Fe) solid solutions

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    Received: 06.06.2017; accepted: 23.06.2017; published: 14.07.2017.Single phase samples of bismuth molybdate, Bi26Mo10O69, doped with Mn on the bismuth sublattice and V, Fe on the molybdenum sublattice were found to crystallize in the triclinic Bi26Mo10O69 structure at low doping levels and in the monoclinic Bi26Mo10O69 structure - at higher dopant concentration. The assumption that all Mn ions have an oxidation state of +2 was confirmed by means of magnetic measurement results analysis using Curie-Weiss law. Conductivity was investigated using impedance spectroscopy. The conductivity of Bi26.4Mn0.6Mo9.6Fe0.4O69-d was 1.2*10-2 S*cm-1 at 973 K and 2.2*10-4 S*cm-1 at 623 K, and the conductivity of Bi26.4Mn0.6Mo9.2V0.8O69-d was 2.2*10-3 S*cm-1 at 973 K and 2.2*10-5 S*cm-1 at 623 K

    Journal Staff

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    The aluminum–zinc-vacancy (Al Zn −V Zn ) complex is identified as one of the dominant defects in Al-containing n -type ZnO after electron irradiation at room temperature with energies above 0.8 MeV. The complex is energetically favorable over the isolated V Zn , binding more than 90% of the stable V Zn ’s generated by the irradiation. It acts as a deep acceptor with the (0/− ) energy level located at approximately 1 eV above the valence band. Such a complex is concluded to be a defect of crucial and general importance that limits the n -type doping efficiency by complex formation with donors, thereby literally removing the donors, as well as by charge compensation

    Crystal structure and conductivity of bismuth-containing complex oxides

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    In the paper, a comprehensive systematic study of different classes of bismuth containing oxide compounds was carried out. The relationship between composition, temperature and concentration regions of existence of stable, specific structure and properties of solid solutions on the basis of vanadates, molybdates, niobates and bismuth was found. The general regularities of synthesis of solid solutions with different variants of solid-phase and soluble methods were determined. On this basis, the optimal conditions for obtaining single-phase materials were formulated. For the first time the temperature and concentration boundaries of the regions of homogeneity and areas of stable existence of polymorphic modifications of solid solutions were defined and/or refined. The structural parameters of the synthesized phases were determined. By the method of electrochemical impedance spectroscopy the nature and features of impedance spectra, the temperature and concentration dependences of electrical conductivity of ceramic materials based on bismuth containing complex oxides were identified

    Determination of Bi in complex oxide samples by atomic absorption spectrometry by using ordinary acetylene – air flame atomization

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    In the present work the air/acetylene flame atomic absorption spectrometry was used for bismuth determination in complex oxides. Interference studies were carried out, and interference with vanadium and molybdenum was detected. The method of standard additions and traditional calibration curve method were used. Calibration and standard addition curves were fitted with linear and polynomial functions. It was shown that using polynomial function gives better results for the standard additions method for determination of bismuth by acetylene/air flame atomic absorption spectrometry. The calibration curve method was shown to be correct at low ( 10mg/L) concentration of an interferent
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