Roadmap to Gigahertz Organic Transistors

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Program FFlexCom — High frequency flexible bendable electronics for wireless communication systems

Today, electronics are implemented on rigid substrates. However, many objects in daily-life are not rigid — they are bendable, stretchable and even foldable. Examples are paper, tapes, our body, our skin and textiles. Until today there is a big gap between electronics and bendable daily-life items. Concerning this matter, the DFG Priority Program FFlexCom aims at paving the way for a novel research area: Wireless communication systems fully integrated on an ultra-thin, bendable and flexible piece of plastic or paper. The Program encompasses 13 projects led by 25 professors. By flexibility we refer to mechanical flexibility, which can come in flavors of bendability, foldability and, stretchability. In the last years the speed of flexible devices has massively been improved. However, to enable functional flexible systems and operation frequencies up to the sub-GHz range, the speed of flexible devices must still be increased by several orders of magnitude requiring novel system and circuit architectures, component concepts, technologies and materials

Wafer scale transfer of ultrathin silicon chips on flexible substrates for high performance bendable systems

This paper presents an innovative approach for wafer scale transfer of ultrathin silicon chips on flexible substrates. The methodology is demonstrated with various devices (ultrathin chip resistive samples, metal oxide semiconductor (MOS) capacitors and n‐channel metal oxide semiconductor field effect transistors (MOSFETs)) on wafers up to 4″ diameter. This is supported by extensive electromechanical characterization and theoretical analysis, including finite element simulation, to evaluate the effect of bending and the critical breaking radius of curvature. The ultrathin chips on polyimide did not break until the radius of curvature of 1.437 mm. In the case of MOS capacitors the measured capacitance increases with increase in bending load. The changes in the transfer and output characteristics of ultrathin MOSFETs closely match with the theoretical model utilizing empirically determined parameters. Overall, the work demonstrates the efficacy of the new methodology presented here for wafer scale transfer of ultrathin chips on flexible substrates. The presented research will be useful for obtaining high performance and compact circuits needed in many futuristic flexible electronics applications such as implantable electronics and flexible displays. Further, it will open new avenues for realizing multilayered multimaterial (foil‐to‐foil) integrated bendable electronics

Guide to state-of-the-art electron devices

Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IEEE Electron Devices Committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device SocietyConcise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, cover

Introductory invited paper Status and trends of silicon RF technology

The current research and development activities in silicon radio-frequency (RF) technologies are ®rst reviewed, accompanied by an illustration of the most pronounced shortcomings of conventional silicon technology in the integrability of RF functions at high GHz frequencies. In the discussion on active RF devices mainly CMOS is investigated due to great interest in this mass-production technology. Issues related to the integration of spiral inductors on silicon are addressed, stressing in particular the di culty of RF substrate potential de®nition. Silicon micromachining techniques are highlighted as potential solutions to the integration of RF passives and to reduce substrate losses and cross-talk on silicon. It is explained that micromachining techniques are the best introduced to the silicon mainstrea