Introductory invited paper Status and trends of silicon RF technology

Abstract

The current research and development activities in silicon radio-frequency (RF) technologies are ®rst reviewed, accompanied by an illustration of the most pronounced shortcomings of conventional silicon technology in the integrability of RF functions at high GHz frequencies. In the discussion on active RF devices mainly CMOS is investigated due to great interest in this mass-production technology. Issues related to the integration of spiral inductors on silicon are addressed, stressing in particular the di culty of RF substrate potential de®nition. Silicon micromachining techniques are highlighted as potential solutions to the integration of RF passives and to reduce substrate losses and cross-talk on silicon. It is explained that micromachining techniques are the best introduced to the silicon mainstrea