From Quantum Materials to Microsystems

: The expression "quantum materials" identifies materials whose properties "cannot be described in terms of semiclassical particles and low-level quantum mechanics", i.e., where lattice, charge, spin and orbital degrees of freedom are strongly intertwined. Despite their intriguing and exotic properties, overall, they appear far away from the world of microsystems, i.e., micro-nano integrated devices, including electronic, optical, mechanical and biological components. With reference to ferroics, i.e., functional materials with ferromagnetic and/or ferroelectric order, possibly coupled to other degrees of freedom (such as lattice deformations and atomic distortions), here we address a fundamental question: "how can we bridge the gap between fundamental academic research focused on quantum materials and microsystems?". Starting from the successful story of semiconductors, the aim of this paper is to design a roadmap towards the development of a novel technology platform for unconventional computing based on ferroic quantum materials. By describing the paradigmatic case of GeTe, the father compound of a new class of materials (ferroelectric Rashba semiconductors), we outline how an efficient integration among academic sectors and with industry, through a research pipeline going from microscopic modeling to device applications, can bring curiosity-driven discoveries to the level of CMOS compatible technology

Fe/GeTe(111) heterostructures as an avenue towards 'ferroelectric Rashba semiconductors'-based spintronics

By performing density functional theory (DFT) and Green's functions calculations, complemented by X-ray Photoemission Spectroscopy, we investigate the electronic structure of Fe/GeTe(111), a prototypical ferromagnetic/Rashba-ferroelectric interface. We reveal that such system exhibits several intriguing properties resulting from the complex interplay of exchange interaction, electric polarization and spin-orbit coupling. Despite a rather strong interfacial hybridization between Fe and GeTe bands, resulting in a complete suppression of the surface states of the latter, the bulk Rashba bands are hardly altered by the ferromagnetic overlayer. This could have a deep impact on spin dependent phenomena observed at this interface, such as spin-to-charge interconversion, which are likely to involve bulk rather than surface Rashba states.Comment: 8 pages, 4 figure

Unravelling and controlling hidden imprint fields in ferroelectric capacitors

Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, E imp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the E imp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating E imp ∼ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of E imp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate E imp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse.This work is supported by the Spanish Government (MAT2014-56063-C2-1-R) and by the Catalan Government (2014 SGR 734). ICMAB-CSIC authors acknowledge financial support from the Spanish Ministry of Economy and Competitiveness, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV- 2015- 0496). Ignasi Fina acknowledges the Beatriu de Pinós postdoctoral scholarship (2011 BP-A_2 00014) from AGAUR-Generalitat de Catalunya. Fanmao Liu is financially supported by China Scholarship Council (CSC) with No. 201306020016. We are thankful to F. Sánchez, and M. Cantoni, for growing the films and making the preliminary characterization of the films, and to M. Stengel for inspiring discussions.Peer Reviewe

Blocking Temperature Engineering in Exchange-Biased CoFeB/IrMn Bilayer

In this paper, we report on the magnetic and chemical characterization of the exchange-biased CoFeB/IrMn bilayers, grown by magnetron sputtering on a Si-based platform and capped by either a Ru or MgO/Ru overlayer. For Ru capping, the locking temperature monotonously increases with the IrMn thickness within the investigated range (3.5–8 nm). On the contrary, for MgO/Ru capping, the exchange bias is inhibited below 6 nm, whereas above 6 nm, the magnetic behavior is the same of Ru-capped films. The chemical analysis reveals a significant dependence of the Mn content from the capping layer for thin IrMn films (2.5 nm), whereas the difference disappears when IrMn becomes thick (7 nm). Our work suggests that a non-uniform composition of the IrMn films directly affects the exchange coupling at the IrMn/CoFeB interface

Unravelling and controlling hidden imprint fields in ferroelectric capacitors

Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, E imp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the E imp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating E imp ∼ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of E imp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate E imp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse

Ferroelectric control of the spin texture in germanium telluride

The electrical manipulation of spins in semiconductors, without magnetic fields or auxiliary ferromagnetic materials, represents the holy grail for spintronics. The use of Rashba effect is very attractive because the k-dependent spin-splitting is originated by an electric field. So far only tiny effects in two-dimensional electron gases (2DEG) have been exploited. Recently, GeTe has been predicted to have bulk bands with giant Rashba-like splitting, originated by the inversion symmetry breaking due to ferroelectric polarization. In this work, we show that GeTe(111) surfaces with inwards or outwards ferroelectric polarizations display opposite sense of circulation of spin in bulk Rashba bands, as seen by spin and angular resolved photoemission experiments. Our results represent the first experimental demonstration of ferroelectric control of the spin texture in a semiconductor, a fundamental milestone towards the exploitation of the non-volatile electrically switchable spin texture of GeTe in spintronic devices.Comment: 18 pages, 4 figure

Nanopatterning spin-textures: A route to reconfigurable magnonics

Magnonics is envisioned to enable highly efficient data transport and processing, by exploiting propagating perturbations in the spin-texture of magnetic materials. Despite the demonstrations of a plethora of proof-of-principle devices, the efficient excitation, transport and manipulation of spin-waves at the nanoscale is still an open challenge. Recently, we demonstrated that the spin-wave excitation and propagation can be controlled by nanopatterning reconfigurable spin-textures in a continuous exchange biased ferromagnetic film. Here, we show that by patterning 90° stripe-shaped magnetic domains, we spatially modulate the spin-wave excitation in a continuous film, and that by applying an external magnetic field we can reversibly â\u80\u9cswitch-offâ\u80\u9d the spin-wave excitation. This opens the way to the use of nanopatterned spin-textures, such as domains and domain walls, for exciting and manipulating magnons in reconfigurable nanocircuits